2026 Karen L. Kavanagh: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	46	11338	10956	194	183	273	10279

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

11338

10956

194

183

273

10279

Overview

Karen L. Kavanagh is affiliated with Simon Fraser University in Canada, specializing in the field of Engineering. Their academic work spans several subfields, notably Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics and Optics, Molecular Biology, and Condensed Matter Physics.

Their research focuses on a number of key topics, including:

Nanowire Synthesis and Applications
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Advanced biosensing and bioanalysis techniques
Advanced Electron Microscopy Techniques and Applications
Semiconductor materials and interfaces
Topological Materials and Phenomena

Kavanagh has contributed to multiple research papers in various scientific journals and repositories. Notable recent papers include:

"Ultrasensitive rapid cytokine sensors based on asymmetric geometry two-dimensional MoS2 diodes," 2022, published in Nature Communications
"Three-Dimensional Conductive Fingerprint Phantoms Made of Ethylene-Vinyl Acetate/Graphene Nanocomposite for Evaluating Smartphone Scanners," 2021, published in ACS Applied Electronic Materials
"GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)," 2022, published in Silicon
"Transmission Helium Ion Microscopy of Graphene," 2020, published in arXiv (Cornell University)
"Abrupt degenerately-doped silicon nanowire tunnel junctions," 2020, published in Nanotechnology

Kavanagh frequently publishes in high-impact venues. Their frequent publication outlets include:

Nature
arXiv (Cornell University)
Nanotechnology
Nature Communications
ACS Applied Electronic Materials

Throughout their career, Kavanagh has collaborated extensively with other researchers. Frequent coauthors include:

Cristina Cordoba
Mirette Fawzy
Mingze Yang
Thushani De Silva
Amirhossein Hasani

Best Publications

Surface plasmon sensor based on the enhanced light transmission through arrays of nanoholes in gold films

Alexandre G. Brolo;Reuven Gordon;Brian Leathem;Karen L. Kavanagh

975
Citations
A new generation of sensors based on extraordinary optical transmission.

Reuven Gordon;David Sinton;Karen L. Kavanagh;Alexandre G. Brolo

646
Citations
Strong polarization in the optical transmission through elliptical nanohole arrays.

R. Gordon;A. G. Brolo;A. McKinnon;A. Rajora

609
Citations
Generation of misfit dislocations in semiconductors

P. M. J. Marée;J. C. Barbour;J. F. van der Veen;K. L. Kavanagh

594
Citations
Nanohole-Enhanced Raman Scattering

Alexandre G. Brolo;Erin Arctander;T. Reuven Gordon;Brian Leathem

572
Citations
Luminescent Colloidal Silicon Suspensions from Porous Silicon

Julie L. Heinrich;Corrine L. Curtis;Grace M. Credo;Michael J. Sailor

355
Citations
Enhanced Fluorescence from Arrays of Nanoholes in a Gold Film

Alexandre G. Brolo;Shing C. Kwok;Matthew G. Moffitt;Reuven Gordon

269
Citations
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

265
Citations
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge

E. D. Marshall;B. Zhang;L. C. Wang;P. F. Jiao

255
Citations
Resonant optical transmission through hole‐arrays in metal films: physics and applications

Reuven Gordon;Alexandre G. Brolo;David Sinton;Karen L. Kavanagh

229
Citations
Misfit dislocations in nanowire heterostructures

Karen L Kavanagh

213
Citations
Thin epitaxial Ge-Si(111) films: Study and control of morphology

P.M.J. Marée;K. Nakagawa;F.M. Mulders;J.F. van der Veen

210
Citations
Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells

H. P. Xin;K. L. Kavanagh;Z. Q. Zhu;C. W. Tu

167
Citations
Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires

Z. H. Wu;X. Mei;D. Kim;M. Blumin

157
Citations
Lattice compression from conduction electrons in heavily doped Si:As

G. S. Cargill;J. Angilello;K. L. Kavanagh

157
Citations
Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers

R. S. Goldman;K. L. Kavanagh;H. H. Wieder;S. N. Ehrlich

153
Citations
Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces

J. M. Woodall;G. D. Pettit;T. N. Jackson;C. Lanza

152
Citations
Strain relaxation of compositionally graded InxGa1-xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures

J. C. P. Chang;Jianhui Chen;J. M. Fernandez;H. H. Wieder

138
Citations
Heteroepitaxial Growth of Vertical GaAs Nanowires on Si (111) Substrates by Metal−Organic Chemical Vapor Deposition

Xin-Yu Bao;Cesare Soci;Darija Susac;Jon Bratvold

131
Citations
Apex-Enhanced Raman Spectroscopy Using Double-Hole Arrays in a Gold Film

A. Lesuffleur;L. K. S. Kumar;A. G. Brolo;K. L. Kavanagh

125
Citations