World's Best Scientists 2026 revealed!
Robert Benjamin Laibowitz

Robert Benjamin Laibowitz

D-Index & Metrics

Materials Science

D-Index
52
Citations
10344
World Ranking
9527
National Ranking
2304

Robert Benjamin Laibowitz publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert Benjamin Laibowitz sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 198 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Robert Benjamin Laibowitz D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert Benjamin Laibowitz sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1980 - Fellow of American Physical Society (APS) Citation Not Provided

Overview

Robert Benjamin Laibowitz is affiliated with IBM in the United States. Their research primarily focuses on engineering and materials science, with significant contributions across subfields such as electrical and electronic engineering, electronic, optical and magnetic materials, and mechanics of materials.

Laibowitz's work covers multiple core topics, including semiconductor materials and devices, copper interconnects and reliability, and metal and thin film mechanics. These areas reflect a blend of materials science and electrical engineering challenges relevant to modern electronics and reliability engineering.

Their recent publication, "AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress," was published in 2020 in the journal Microelectronic Engineering. This paper highlights investigation into reliability issues affecting dielectric capacitors, specifically focusing on moisture-induced degradation mechanisms.

  • AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress (2020) - Microelectronic Engineering

Frequent collaborators in Laibowitz's research include C. Cabral, Franco Stellari, and Peilin Song, each contributing to these research efforts. Their work has been published primarily in Microelectronic Engineering, indicating a focus on applied research in microelectronics manufacturing and reliability.

  • C. Cabral
  • Franco Stellari
  • Peilin Song

  • Microelectronic Engineering

Laibowitz has also been recognized by the American Physical Society as a Fellow since 1980, an acknowledgment that situates them within the broader physics and materials science community.

The combination of Laibowitz's specialties in semiconductor devices and copper interconnect reliability addresses critical aspects of device performance and longevity at the materials and component level. Their contributions extend into the mechanical properties of metals and thin films, which are important for understanding material behavior under operational stresses.

Best Publications

  • Critical-current measurements in epitaxial films of YBa2Cu

    P. Chaudhari;R. H. Koch;R. B. Laibowitz;T. R. McGuire

  • Quantum interference devices made from superconducting oxide thin films

    R. H. Koch;C. P. Umbach;G. J. Clark;P. Chaudhari

  • Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH3NH3SnI3

    D.B. Mitzi;C.A. Feild;Z. Schlesinger;R.B. Laibowitz

  • The effect of stress on the dielectric properties of barium strontium titanate thin films

    T. M. Shaw;Z. Suo;M. Huang;E. Liniger

  • Thin superconducting oxide films

    R. B. Laibowitz;R. H. Koch;P. Chaudhari;R. J. Gambino

  • Epitaxial films of YBa2Cu3O7−δ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablation

    G. Koren;A. Gupta;E. A. Giess;A. Segmüller

  • Laser wavelength dependent properties of YBa2Cu3O7−δ thin films deposited by laser ablation

    G. Koren;A. Gupta;R. J. Baseman;M. I. Lutwyche

  • Effects of radiation damage in ion‐implanted thin films of metal‐oxide superconductors

    G. J. Clark;A. D. Marwick;R. H. Koch;R. B. Laibowitz

  • (Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM

    D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz

  • Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    R. L. Sandstrom;E. A. Giess;W. J. Gallagher;A. Segmüller

  • Fractal (Scaling) Clusters in Thin Gold Films near the Percolation Threshold

    R. F. Voss;R. B. Laibowitz;E. I. Allessandrini

  • Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz

    J. D. Baniecki;R. B. Laibowitz;T. M. Shaw;P. R. Duncombe

  • Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

    C. D. Dimitrakopoulos;I. Kymissis;S. Purushothaman;D. A. Neumayer

  • Dynamic Scaling near the Percolation Threshold in Thin Au Films

    R. B. Laibowitz;Yuval Gefen

  • Barium titanate nanocrystals and nanocrystal thin films: Synthesis, ferroelectricity, and dielectric properties

    Limin Huang;Zhuoying Chen;James D. Wilson;Sarbajit Banerjee

  • Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions

    J. Z. Sun;L. Krusin-Elbaum;P. R. Duncombe;A. Gupta

  • Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric

    Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz

  • Reliable single‐target sputtering process for high‐temperature superconducting films and devices

    R. L. Sandstrom;W. J. Gallagher;T. R. Dinger;R. H. Koch

  • Direct observation of ensemble averaging of the Aharonov-Bohm effect in normal-metal loops.

    C. P. Umbach;C. Van Haesendonck;R. B. Laibowitz;S. Washburn

  • All high Tc edge junctions and SQUIDs

    R. B. Laibowitz;R. H. Koch;A. Gupta;G. Koren

  • Thin-film field-effect transistor with organic semiconductor requiring low operating voltages

    Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz

  • Ion beam amorphization of YBa2Cu3Ox

    G. J. Clark;F. K. LeGoues;A. D. Marwick;R. B. Laibowitz

Frequent Co-Authors

William J. Gallagher
William J. Gallagher Taiwan Semiconductor Manufacturing Company (Taiwan)
Timothy M. Shaw
Timothy M. Shaw University of Massachusetts Boston
Alfred Grill
Alfred Grill IBM (United States)
Katherine L. Saenger
Katherine L. Saenger Auburn University
Tony F. Heinz
Tony F. Heinz Stanford University
Cyril Cabral
Cyril Cabral IBM (United States)
Jerome J. Cuomo
Jerome J. Cuomo North Carolina State University
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Sampath Purushothaman
Sampath Purushothaman IBM (United States)
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)

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