World's Best Scientists 2026 revealed!
Robert Benjamin Laibowitz

Robert Benjamin Laibowitz

D-Index & Metrics

Materials Science

D-Index
52
Citations
10344
World Ranking
9529
National Ranking
2306

Research.com Recognitions

  • 1980 - Fellow of American Physical Society (APS) Citation Not Provided

Overview

Robert Benjamin Laibowitz is affiliated with IBM in the United States. Their research primarily focuses on engineering and materials science, with significant contributions across subfields such as electrical and electronic engineering, electronic, optical and magnetic materials, and mechanics of materials.

Laibowitz's work covers multiple core topics, including semiconductor materials and devices, copper interconnects and reliability, and metal and thin film mechanics. These areas reflect a blend of materials science and electrical engineering challenges relevant to modern electronics and reliability engineering.

Their recent publication, "AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress," was published in 2020 in the journal Microelectronic Engineering. This paper highlights investigation into reliability issues affecting dielectric capacitors, specifically focusing on moisture-induced degradation mechanisms.

  • AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress (2020) - Microelectronic Engineering

Frequent collaborators in Laibowitz's research include C. Cabral, Franco Stellari, and Peilin Song, each contributing to these research efforts. Their work has been published primarily in Microelectronic Engineering, indicating a focus on applied research in microelectronics manufacturing and reliability.

  • C. Cabral
  • Franco Stellari
  • Peilin Song

  • Microelectronic Engineering

Laibowitz has also been recognized by the American Physical Society as a Fellow since 1980, an acknowledgment that situates them within the broader physics and materials science community.

The combination of Laibowitz's specialties in semiconductor devices and copper interconnect reliability addresses critical aspects of device performance and longevity at the materials and component level. Their contributions extend into the mechanical properties of metals and thin films, which are important for understanding material behavior under operational stresses.

Best Publications

  • Critical-current measurements in epitaxial films of YBa2Cu

    P. Chaudhari;R. H. Koch;R. B. Laibowitz;T. R. McGuire

  • Quantum interference devices made from superconducting oxide thin films

    R. H. Koch;C. P. Umbach;G. J. Clark;P. Chaudhari

  • Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH3NH3SnI3

    D.B. Mitzi;C.A. Feild;Z. Schlesinger;R.B. Laibowitz

  • The effect of stress on the dielectric properties of barium strontium titanate thin films

    T. M. Shaw;Z. Suo;M. Huang;E. Liniger

  • Thin superconducting oxide films

    R. B. Laibowitz;R. H. Koch;P. Chaudhari;R. J. Gambino

  • Epitaxial films of YBa2Cu3O7−δ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablation

    G. Koren;A. Gupta;E. A. Giess;A. Segmüller

  • Laser wavelength dependent properties of YBa2Cu3O7−δ thin films deposited by laser ablation

    G. Koren;A. Gupta;R. J. Baseman;M. I. Lutwyche

  • Effects of radiation damage in ion‐implanted thin films of metal‐oxide superconductors

    G. J. Clark;A. D. Marwick;R. H. Koch;R. B. Laibowitz

  • (Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM

    D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz

  • Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    R. L. Sandstrom;E. A. Giess;W. J. Gallagher;A. Segmüller

  • Fractal (Scaling) Clusters in Thin Gold Films near the Percolation Threshold

    R. F. Voss;R. B. Laibowitz;E. I. Allessandrini

  • Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz

    J. D. Baniecki;R. B. Laibowitz;T. M. Shaw;P. R. Duncombe

  • Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

    C. D. Dimitrakopoulos;I. Kymissis;S. Purushothaman;D. A. Neumayer

  • Dynamic Scaling near the Percolation Threshold in Thin Au Films

    R. B. Laibowitz;Yuval Gefen

  • Barium titanate nanocrystals and nanocrystal thin films: Synthesis, ferroelectricity, and dielectric properties

    Limin Huang;Zhuoying Chen;James D. Wilson;Sarbajit Banerjee

  • Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions

    J. Z. Sun;L. Krusin-Elbaum;P. R. Duncombe;A. Gupta

  • Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric

    Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz

  • Reliable single‐target sputtering process for high‐temperature superconducting films and devices

    R. L. Sandstrom;W. J. Gallagher;T. R. Dinger;R. H. Koch

  • Direct observation of ensemble averaging of the Aharonov-Bohm effect in normal-metal loops.

    C. P. Umbach;C. Van Haesendonck;R. B. Laibowitz;S. Washburn

  • All high Tc edge junctions and SQUIDs

    R. B. Laibowitz;R. H. Koch;A. Gupta;G. Koren

  • Thin-film field-effect transistor with organic semiconductor requiring low operating voltages

    Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz

  • Ion beam amorphization of YBa2Cu3Ox

    G. J. Clark;F. K. LeGoues;A. D. Marwick;R. B. Laibowitz

Frequent Co-Authors

William J. Gallagher
William J. Gallagher Taiwan Semiconductor Manufacturing Company (Taiwan)
Timothy M. Shaw
Timothy M. Shaw University of Massachusetts Boston
Alfred Grill
Alfred Grill IBM (United States)
Katherine L. Saenger
Katherine L. Saenger Auburn University
Tony F. Heinz
Tony F. Heinz Stanford University
Cyril Cabral
Cyril Cabral IBM (United States)
Jerome J. Cuomo
Jerome J. Cuomo North Carolina State University
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Sampath Purushothaman
Sampath Purushothaman IBM (United States)
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)

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