Robert Benjamin Laibowitz is affiliated with IBM in the United States. Their research primarily focuses on engineering and materials science, with significant contributions across subfields such as electrical and electronic engineering, electronic, optical and magnetic materials, and mechanics of materials.
Laibowitz's work covers multiple core topics, including semiconductor materials and devices, copper interconnects and reliability, and metal and thin film mechanics. These areas reflect a blend of materials science and electrical engineering challenges relevant to modern electronics and reliability engineering.
Their recent publication, "AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress," was published in 2020 in the journal Microelectronic Engineering. This paper highlights investigation into reliability issues affecting dielectric capacitors, specifically focusing on moisture-induced degradation mechanisms.
Frequent collaborators in Laibowitz's research include C. Cabral, Franco Stellari, and Peilin Song, each contributing to these research efforts. Their work has been published primarily in Microelectronic Engineering, indicating a focus on applied research in microelectronics manufacturing and reliability.
Laibowitz has also been recognized by the American Physical Society as a Fellow since 1980, an acknowledgment that situates them within the broader physics and materials science community.
The combination of Laibowitz's specialties in semiconductor devices and copper interconnect reliability addresses critical aspects of device performance and longevity at the materials and component level. Their contributions extend into the mechanical properties of metals and thin films, which are important for understanding material behavior under operational stresses.
P. Chaudhari;R. H. Koch;R. B. Laibowitz;T. R. McGuire
R. H. Koch;C. P. Umbach;G. J. Clark;P. Chaudhari
D.B. Mitzi;C.A. Feild;Z. Schlesinger;R.B. Laibowitz
T. M. Shaw;Z. Suo;M. Huang;E. Liniger
R. B. Laibowitz;R. H. Koch;P. Chaudhari;R. J. Gambino
G. Koren;A. Gupta;E. A. Giess;A. Segmüller
G. Koren;A. Gupta;R. J. Baseman;M. I. Lutwyche
G. J. Clark;A. D. Marwick;R. H. Koch;R. B. Laibowitz
D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz
R. L. Sandstrom;E. A. Giess;W. J. Gallagher;A. Segmüller
R. F. Voss;R. B. Laibowitz;E. I. Allessandrini
J. D. Baniecki;R. B. Laibowitz;T. M. Shaw;P. R. Duncombe
C. D. Dimitrakopoulos;I. Kymissis;S. Purushothaman;D. A. Neumayer
R. B. Laibowitz;Yuval Gefen
Limin Huang;Zhuoying Chen;James D. Wilson;Sarbajit Banerjee
J. Z. Sun;L. Krusin-Elbaum;P. R. Duncombe;A. Gupta
Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz
R. L. Sandstrom;W. J. Gallagher;T. R. Dinger;R. H. Koch
C. P. Umbach;C. Van Haesendonck;R. B. Laibowitz;S. Washburn
R. B. Laibowitz;R. H. Koch;A. Gupta;G. Koren
Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz
G. J. Clark;F. K. LeGoues;A. D. Marwick;R. B. Laibowitz
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