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Geun Young Yeom

Geun Young Yeom

Overview

Geun Young Yeom is affiliated with Sungkyunkwan University in South Korea. Their research primarily focuses on engineering and materials science, with specific expertise in electrical and electronic engineering, materials chemistry, mechanics of materials, electronic, optical and magnetic materials, and biomedical engineering.

Their work extensively covers several key scientific topics, including semiconductor materials and devices, plasma diagnostics and applications, metal and thin film mechanics, copper interconnects and reliability, ZnO doping and properties, diamond and carbon-based materials research, and advanced surface polishing techniques.

Among their recent published papers are:

  • Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma, 2022, Materials
  • Specific molecular design of tetradentate Platinum(II) complexes for enhancing the electroluminescent performances of blue-phosphorescent organic light-emitting diodes, 2024, Chemical Engineering Journal
  • Etch characteristics of Si and TiO2 nanostructures using pulse biased inductively coupled plasmas, 2020, Nanotechnology
  • Study on plasma characteristics and gas analysis before and after recovery using liquid-fluorocarbon precursor, 2020, Applied Surface Science
  • Universal vertical standing of block copolymer microdomains enabled by a gradient block, 2021, Journal of Materials Chemistry C

Frequent co-authors in their collaborative works include Dain Sung, Dongwoo Kim, Hong Seong Gil, Byeong Hwa Jeong, and Dong Woo Kim. This indicates a network of active research partnerships contributing to their scientific output.

Publications by Geun Young Yeom often appear in venues such as ECS Meeting Abstracts, Materials, Nanoscale, Applied Surface Science, and ACS Applied Electronic Materials, reflecting a consistent research presence in journals associated with materials science and applied engineering.

Best Publications

  • Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

    Eric Singh;Pragya Singh;Ki Seok Kim;Geun Young Yeom

  • High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

    Jaewoo Shim;Aely Oh;Dong-Ho Kang;Seyong Oh

  • Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells.

    Eric Singh;Ki Seok Kim;Geun Young Yeom;Hari Singh Nalwa

  • Low‐Temperature Synthesis of Large‐Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma‐Enhanced Chemical Vapor Deposition

    Chisung Ahn;Jinhwan Lee;Hyeong-U Kim;Hunyoung Bark

  • Atomic layer etching apparatus and etching method using the same

    Geun-young Yeom;Woong-Sun Lim;Sang-Duk Park;Yi-Yeon Kim

  • Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.

    Viet Phuong Pham;Geun Young Yeom

  • Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells

    Eric Singh;Eric Singh;Ki Seok Kim;Geun Young Yeom;Hari Singh Nalwa

  • Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.

    Ki Seok Kim;You Jin Ji;Ki Hyun Kim;Seunghyuk Choi

  • Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.

    Dong-Ho Kang;Jaewoo Shim;Sung Kyu Jang;Jeaho Jeon

  • A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

    Seo Hyeon Jo;Dong Ho Kang;Jaewoo Shim;Jaeho Jeon

  • Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

    Si-Hyun Park;Jaehoon Kim;Heonsu Jeon;Tan Sakong

  • A study of transparent indium tin oxide (ITO) contact to p-GaN

    D.W. Kim;Y.J. Sung;J.W. Park;G.Y. Yeom

  • Atomic layer etching of graphene for full graphene device fabrication

    Woong Sun Lim;Yi Yeon Kim;Hyeongkeun Kim;Sukjae Jang

  • Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same

    Geun-young Yeom;Byoung-Jae Park;Sung-Woo Kim;Jong-Tae Lim

  • Number of graphene layers as a modulator of the open-circuit voltage of graphene-based solar cell

    Kyuwook Ihm;Jong Tae Lim;Kyoung-Jae Lee;Jae Wook Kwon

  • Atomic Layer Etching Mechanism of MoS2 for Nanodevices

    Ki Seok Kim;Ki Hyun Kim;Yeonsig Nam;Jaeho Jeon

  • Controlled Layer-by-Layer Etching of MoS₂.

    TaiZhe Lin;TaiZhe Lin;BaoTao Kang;MinHwan Jeon;Craig Huffman

  • Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure

    D. W. Kim;H. Y. Lee;M. C. Yoo;G. Y. Yeom

  • An Optogenetics-Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network.

    Seunghwan Seo;Je-Jun Lee;Ryong-Gyu Lee;Tae Hyung Kim

  • Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition

    Yong June Choi;Su Cheol Gong;David C. Johnson;Stephen Golledge

Frequent Co-Authors

Myung S. Jhon
Myung S. Jhon Carnegie Mellon University
Nae-Eung Lee
Nae-Eung Lee Sungkyunkwan University
Hyung-Ho Park
Hyung-Ho Park Yonsei University
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Hyoyoung Lee
Hyoyoung Lee Sungkyunkwan University
Ji-Beom Yoo
Ji-Beom Yoo Sungkyunkwan University
Zonghoon Lee
Zonghoon Lee Ulsan National Institute of Science and Technology
Yeon Sik Jung
Yeon Sik Jung Korea Advanced Institute of Science and Technology
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Hari Singh Nalwa
Hari Singh Nalwa Hitachi (Japan)

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