World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
7077
World Ranking
5472
National Ranking
158

Overview

Lorenzo Faraone is affiliated with the University of Western Australia in Australia. Their research spans multiple disciplines within engineering and physics, with a particular focus on semiconductor materials and devices.

The primary fields of study covered by Lorenzo Faraone include Engineering and Physics and Astronomy. More specifically, their work concentrates on subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Biomedical Engineering, and Surfaces, Coatings and Films.

The scientist's main research topics cover:

  • Advanced Semiconductor Detectors and Materials
  • Semiconductor Quantum Structures and Devices
  • Chalcogenide Semiconductor Thin Films
  • Photonic and Optical Devices
  • Photonic Crystals and Applications
  • Terahertz Technology and Applications
  • Advanced Fiber Optic Sensors

Lorenzo Faraone has published frequently in the following venues:

  • Journal of Electronic Materials
  • Journal of Applied Physics
  • Infrared Physics & Technology
  • Advanced Functional Materials
  • Applied Physics Letters

The scientist has collaborated extensively with several co-authors, including:

  • Wen Lei
  • Wenwu Pan
  • Mariusz Martyniuk
  • Dilusha Silva
  • Gilberto A. Umana-Membreno

Recent publications by Lorenzo Faraone include:

  • "Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material," 2020, Applied Physics Letters
  • "Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing," 2024, Advanced Materials
  • "Large area van der Waals epitaxy of II-VI CdSe thin films for flexible optoelectronics and full-color imaging," 2021, Nano Research
  • "Optical Microelectromechanical Systems Technologies for Spectrally Adaptive Sensing and Imaging," 2021, Advanced Functional Materials
  • "Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two-Terminal Memristors," 2023, Advanced Functional Materials

Best Publications

  • Third-generation infrared photodetector arrays

    A. Rogalski;Jarek Antoszewski;Lorenzo Faraone

  • Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

    Wen Lei;Jarek Antoszewski;Lorenzo Faraone

  • New concepts in infrared photodetector designs

    P. Martyniuk;Jarek Antoszewski;Mariusz Martyniuk;Lorenzo Faraone

  • Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

    H. Huang;K.J. Winchester;Alexandra Suvorova;B.R. Lawn

  • Improved quantitative mobility spectrum analysis for Hall characterization

    I. Vurgaftman;J.R. Meyer;C.A. Hoffman;D. Redfern

  • Widely Tunable MEMS-Based Fabry–Perot Filter

    J.S. Milne;J.M. Dell;A.J. Keating;L. Faraone

  • Magneto-transport characterization using quantitative mobility-spectrum analysis

    J. Antoszewski;D. J. Seymour;L. Faraone;J. R. Meyer

  • MEMS-based microspectrometer technologies for NIR and MIR wavelengths

    Leo P Schuler;Jason S Milne;John M Dell;Lorenzo Faraone

  • /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes

    G.A. Umana-Membreno;J.M. Dell;G. Parish;B.D. Nener

  • Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

    R. Menozzi;G.A. Umana-Membreno;B.D. Nener;G. Parish

  • Ultrathin tunable terahertz absorber based on MEMS-driven metamaterial.

    Mingkai Liu;Mohamad Susli;Dilusha Silva;Gino Putrino

  • Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filters

    H. Huang;K.J. Winchester;Yinong Liu;Xiao Hu

  • Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

    V. Gopal;E. Plis;J.B. Rodriguez;C.E. Jones

  • Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

    C.A. Musca;J. Antoszewski;K.J. Winchester;A.J. Keating

  • Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors

    J. R. Meyer;C. A. Hoffman;J. Antoszewski;L. Faraone

  • HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

    John Dell;Jarek Antoszewski;M.H. Rais;Charles Musca

  • Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

    A. Asgari;S. Babanejad;L. Faraone

  • Characterization of thermally oxidized n + polycrystalline silicon

    L. Faraone;R.D. Vibronek;J.T. McGinn

  • Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

    M. Kopytko;J. Wróbel;K. Jóźwikowski;A. Rogalski

  • Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures

    A. Asgari;M. Kalafi;Lorenzo Faraone

  • Characterization of Hg 0.7 Cd 0.3 Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

    Jarek Antoszewski;Charles Musca;John Dell;Lorenzo Faraone

Frequent Co-Authors

Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Han Huang
Han Huang Central South University
Sanjay Krishna
Sanjay Krishna The Ohio State University
Elena Plis
Elena Plis Georgia Institute of Technology
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Antoni Rogalski
Antoni Rogalski Military University of Technology in Warsaw
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
Jerry R. Meyer
Jerry R. Meyer United States Naval Research Laboratory
Sarah L. Keller
Sarah L. Keller University of Washington
D.L. Pulfrey
D.L. Pulfrey University of British Columbia

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