World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
7077
World Ranking
5472
National Ranking
158

Lorenzo Faraone publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lorenzo Faraone sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 416 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Lorenzo Faraone D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lorenzo Faraone sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Lorenzo Faraone is affiliated with the University of Western Australia in Australia. Their research spans multiple disciplines within engineering and physics, with a particular focus on semiconductor materials and devices.

The primary fields of study covered by Lorenzo Faraone include Engineering and Physics and Astronomy. More specifically, their work concentrates on subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Biomedical Engineering, and Surfaces, Coatings and Films.

The scientist's main research topics cover:

  • Advanced Semiconductor Detectors and Materials
  • Semiconductor Quantum Structures and Devices
  • Chalcogenide Semiconductor Thin Films
  • Photonic and Optical Devices
  • Photonic Crystals and Applications
  • Terahertz Technology and Applications
  • Advanced Fiber Optic Sensors

Lorenzo Faraone has published frequently in the following venues:

  • Journal of Electronic Materials
  • Journal of Applied Physics
  • Infrared Physics & Technology
  • Advanced Functional Materials
  • Applied Physics Letters

The scientist has collaborated extensively with several co-authors, including:

  • Wen Lei
  • Wenwu Pan
  • Mariusz Martyniuk
  • Dilusha Silva
  • Gilberto A. Umana-Membreno

Recent publications by Lorenzo Faraone include:

  • "Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material," 2020, Applied Physics Letters
  • "Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing," 2024, Advanced Materials
  • "Large area van der Waals epitaxy of II-VI CdSe thin films for flexible optoelectronics and full-color imaging," 2021, Nano Research
  • "Optical Microelectromechanical Systems Technologies for Spectrally Adaptive Sensing and Imaging," 2021, Advanced Functional Materials
  • "Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two-Terminal Memristors," 2023, Advanced Functional Materials

Best Publications

  • Third-generation infrared photodetector arrays

    A. Rogalski;Jarek Antoszewski;Lorenzo Faraone

  • Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

    Wen Lei;Jarek Antoszewski;Lorenzo Faraone

  • New concepts in infrared photodetector designs

    P. Martyniuk;Jarek Antoszewski;Mariusz Martyniuk;Lorenzo Faraone

  • Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

    H. Huang;K.J. Winchester;Alexandra Suvorova;B.R. Lawn

  • Improved quantitative mobility spectrum analysis for Hall characterization

    I. Vurgaftman;J.R. Meyer;C.A. Hoffman;D. Redfern

  • Widely Tunable MEMS-Based Fabry–Perot Filter

    J.S. Milne;J.M. Dell;A.J. Keating;L. Faraone

  • Magneto-transport characterization using quantitative mobility-spectrum analysis

    J. Antoszewski;D. J. Seymour;L. Faraone;J. R. Meyer

  • MEMS-based microspectrometer technologies for NIR and MIR wavelengths

    Leo P Schuler;Jason S Milne;John M Dell;Lorenzo Faraone

  • /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes

    G.A. Umana-Membreno;J.M. Dell;G. Parish;B.D. Nener

  • Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

    R. Menozzi;G.A. Umana-Membreno;B.D. Nener;G. Parish

  • Ultrathin tunable terahertz absorber based on MEMS-driven metamaterial.

    Mingkai Liu;Mohamad Susli;Dilusha Silva;Gino Putrino

  • Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filters

    H. Huang;K.J. Winchester;Yinong Liu;Xiao Hu

  • Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

    V. Gopal;E. Plis;J.B. Rodriguez;C.E. Jones

  • Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

    C.A. Musca;J. Antoszewski;K.J. Winchester;A.J. Keating

  • Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors

    J. R. Meyer;C. A. Hoffman;J. Antoszewski;L. Faraone

  • HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

    John Dell;Jarek Antoszewski;M.H. Rais;Charles Musca

  • Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

    A. Asgari;S. Babanejad;L. Faraone

  • Characterization of thermally oxidized n + polycrystalline silicon

    L. Faraone;R.D. Vibronek;J.T. McGinn

  • Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

    M. Kopytko;J. Wróbel;K. Jóźwikowski;A. Rogalski

  • Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures

    A. Asgari;M. Kalafi;Lorenzo Faraone

  • Characterization of Hg 0.7 Cd 0.3 Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

    Jarek Antoszewski;Charles Musca;John Dell;Lorenzo Faraone

Frequent Co-Authors

Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Han Huang
Han Huang Central South University
Sanjay Krishna
Sanjay Krishna The Ohio State University
Elena Plis
Elena Plis Georgia Institute of Technology
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Antoni Rogalski
Antoni Rogalski Military University of Technology in Warsaw
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
Jerry R. Meyer
Jerry R. Meyer United States Naval Research Laboratory
Sarah L. Keller
Sarah L. Keller University of Washington
D.L. Pulfrey
D.L. Pulfrey University of British Columbia

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