World's Best Scientists 2026 revealed!
Jianlu Wang

Jianlu Wang

D-Index & Metrics

Materials Science

D-Index
45
Citations
8461
World Ranking
11689
National Ranking
3225

Jianlu Wang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jianlu Wang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 128 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jianlu Wang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jianlu Wang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jianlu Wang is a researcher affiliated with Fudan University in China. Their academic work predominantly spans the fields of Engineering and Materials Science, with a specific focus on Electrical and Electronic Engineering and Materials Chemistry as key subfields.

The scientist has contributed to research in several interconnected topics, including:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • MXene and MAX Phase Materials
  • Ga2O3 and related materials
  • Advanced Memory and Neural Computing
  • Chalcogenide Semiconductor Thin Films

Their publications have appeared regularly in various scientific journals. The most frequent venues for their work are:

  • Applied Physics Letters
  • Nature Communications
  • Advanced Materials
  • Nature Electronics
  • SSRN Electronic Journal

Significant recent papers authored by Jianlu Wang include:

  • "Unipolar barrier photodetectors based on van der Waals heterostructures," 2021, Nature Electronics
  • "Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors," 2021, Advanced Science
  • "Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains," 2020, Nature Electronics
  • "Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition," 2021, Science Advances
  • "Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains," 2022, Nature Communications

Their research collaborations include frequent co-authorship with several scholars, among whom are Junhao Chu, Xudong Wang, Hong Shen, Tie Lin, and Xiangjian Meng.

Best Publications

  • Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

    Xudong Wang;Xudong Wang;Peng Wang;Jianlu Wang;Weida Hu

  • Unipolar barrier photodetectors based on van der Waals heterostructures

    Yunfeng Chen;Yang Wang;Yang Wang;Zhen Wang;Yue Gu

  • Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet—Visible to Infrared

    Jianlu Wang;Hehai Fang;Xudong Wang;Xiaoshuang Chen

  • Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection

    Peng Wang;Peng Wang;Shanshan Liu;Wenjin Luo;Hehai Fang

  • High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

    Yan Chen;Xudong Wang;Guangjian Wu;Zhen Wang

  • Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors.

    Fang Wang;Xuming Zou;Mengjian Xu;Mengjian Xu;Hao Wang

  • Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

    Unknown

  • Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

    Guangjian Wu;Guangjian Wu;Bobo Tian;Bobo Tian;Lan Liu;Lan Liu;Wei Lv

  • Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect.

    Hai Huang;Jianlu Wang;Weida Hu;Lei Liao

  • Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs.

    Ziqi Zhou;Mingsheng Long;Longfei Pan;Xiaoting Wang

  • Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

    Meng Peng;Meng Peng;Runzhang Xie;Zhen Wang;Peng Wang

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures.

    Lan Liu;Lan Liu;Chunsen Liu;Lilai Jiang;Jiayi Li

  • MoTe2 p-n Homojunctions Defined by Ferroelectric Polarization.

    Guangjian Wu;Guangjian Wu;Xudong Wang;Yan Chen;Shuaiqin Wu

  • A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

    Bobo Tian;Bobo Tian;Lan Liu;Mengge Yan;Jianlu Wang

  • HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

    Unknown

  • Logic gates based on neuristors made from two-dimensional materials

    Huawei Chen;Xiaoyong Xue;Chunsen Liu;Jinbei Fang

  • Ultrasensitive negative capacitance phototransistors.

    Luqi Tu;Rongrong Cao;Xudong Wang;Yan Chen

  • Ferroelectric Negative Capacitance Field Effect Transistor

    Luqi Tu;Xudong Wang;Jianlu Wang;Xiangjian Meng

  • AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity

    Feng Wu;Hui Xia;Haiding Sun;Junwei Zhang

  • Ferroelectric and electrical behavior of (Na0.5Bi0.5)TiO3 thin films

    Z. H. Zhou;J. M. Xue;W. Z. Li;J. Wang

  • Ferroelectric-tuned van der Waals heterojunction with band alignment evolution.

    Yan Chen;Yan Chen;Xudong Wang;Le Huang;Xiaoting Wang

  • When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.

    Dingshan Zheng;Jianlu Wang;Weida Hu;Lei Liao

  • High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2

    Fan Gong;Fan Gong;Wenjin Luo;Jianlu Wang;Peng Wang

  • Tunnel electroresistance through organic ferroelectrics

    B.B. Tian;B.B. Tian;J.L. Wang;S Fusil;Yang Liu

  • Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

    Yuan Qin;Shibing Long;Shibing Long;Qiming He;Hang Dong

Frequent Co-Authors

Junhao Chu
Junhao Chu Chinese Academy of Sciences
Weida Hu
Weida Hu Chinese Academy of Sciences
Xudong Wang
Xudong Wang University of Wisconsin–Madison
Xiangjian Meng
Xiangjian Meng Chinese Academy of Sciences
Hong Shen
Hong Shen Sun Yat-sen University
Lei Liao
Lei Liao Hunan University
Xiaoshuang Chen
Xiaoshuang Chen Chinese Academy of Sciences
Yuanjie Zheng
Yuanjie Zheng Shandong Normal University
Z.G. Wang
Z.G. Wang Chinese Academy of Sciences
David Wei Zhang
David Wei Zhang Fudan University

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