World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
46
Citations
7394
World Ranking
5206
National Ranking
1013

Xiangjian Meng publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Xiangjian Meng sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 201 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Xiangjian Meng D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Xiangjian Meng sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 46 D-Index — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Xiangjian Meng is affiliated with the Chinese Academy of Sciences in China. Their research primarily spans the fields of Materials Science and Engineering, with a focus on specialized subfields such as Materials Chemistry, Electrical and Electronic Engineering, and Biomedical Engineering.

The scientist's work covers several main topics including:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Advanced Sensor and Energy Harvesting Materials
  • Gas Sensing Nanomaterials and Sensors

Among the frequent co-authors collaborating with Xiangjian Meng are Junhao Chu, Hong Shen, Tie Lin, Jianlu Wang, and Xudong Wang, indicating ongoing partnerships in their research endeavors.

The scientist has published extensively in several notable venues, with multiple papers in:

  • Nature Communications
  • Applied Physics Letters
  • The Cambridge Structural Database
  • Advanced Materials
  • Advanced Electronic Materials

Recent publications demonstrate a focus on ferroelectric domains, photodetectors, and advanced device technologies. Selected papers include:

  • Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains, 2020, Nature Electronics
  • Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains, 2022, Nature Communications
  • Ultrasensitive negative capacitance phototransistors, 2020, Nature Communications
  • MoTe2 p-n Homojunctions Defined by Ferroelectric Polarization, 2020, Advanced Materials
  • Ferroelectric-tuned van der Waals heterojunction with band alignment evolution, 2021, Nature Communications

Best Publications

  • Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

    Xudong Wang;Xudong Wang;Peng Wang;Jianlu Wang;Weida Hu

  • High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

    Yan Chen;Xudong Wang;Guangjian Wu;Zhen Wang

  • Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

    Guangjian Wu;Guangjian Wu;Bobo Tian;Bobo Tian;Lan Liu;Lan Liu;Wei Lv

  • Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect.

    Hai Huang;Jianlu Wang;Weida Hu;Lei Liao

  • MoTe2 p-n Homojunctions Defined by Ferroelectric Polarization.

    Guangjian Wu;Guangjian Wu;Xudong Wang;Yan Chen;Shuaiqin Wu

  • A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

    Bobo Tian;Bobo Tian;Lan Liu;Mengge Yan;Jianlu Wang

  • Ultrasensitive negative capacitance phototransistors.

    Luqi Tu;Rongrong Cao;Xudong Wang;Yan Chen

  • Ferroelectric Negative Capacitance Field Effect Transistor

    Luqi Tu;Xudong Wang;Jianlu Wang;Xiangjian Meng

  • Ferroelectric-tuned van der Waals heterojunction with band alignment evolution.

    Yan Chen;Yan Chen;Xudong Wang;Le Huang;Xiaoting Wang

  • When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.

    Dingshan Zheng;Jianlu Wang;Weida Hu;Lei Liao

  • Tunnel electroresistance through organic ferroelectrics

    B.B. Tian;B.B. Tian;J.L. Wang;S Fusil;Yang Liu

  • Huge electrocaloric effect in Langmuir-Blodgett ferroelectric polymer thin films

    P F Liu;P F Liu;J L Wang;X J Meng;J Yang

  • Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM.

    Sourav Roy;Gang Niu;Qiang Wang;Yankun Wang

  • Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe 2 channels

    Xudong Wang;Xudong Wang;Chunsen Liu;Yan Chen;Guangjian Wu

  • Photo-induced ferroelectric switching in perovskite CH3NH3PbI3 films

    Peiqi Wang;Jinjin Zhao;Jinjin Zhao;Liyu Wei;Qingfeng Zhu

  • Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

    Xudong Wang;Xudong Wang;Yan Chen;Guangjian Wu;Dan Li

  • Mn-doped 0.71Pb(Mg1∕3Nb2∕3)O3–0.29PbTiO3 pyroelectric crystals for uncooled infrared focal plane arrays applications

    Yanxue Tang;Laihui Luo;Yanmin Jia;Haosu Luo

  • Ferroelectric switching of elastin.

    Yuanming Liu;Hong Ling Cai;Matthew Zelisko;Yunjie Wang

  • Ferroelectric Synaptic Transistor Network for Associative Memory

    Mengge Yan;Mengge Yan;Qiuxiang Zhu;Siqi Wang;Yiming Ren

  • Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

    Yan Chen;Xudong Wang;Peng Wang;Hai Huang

  • Preparation of highly (1 0 0)-oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique

    Xiang-Jian Meng;Jing-Lan Sun;Jian Yu;Hong-Juan Ye

  • Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection.

    Yanxiao Sun;Gang Niu;Wei Ren;Xiangjian Meng

  • Highly sensitive phototransistor based on GaSe nanosheets

    Hai Huang;Peng Wang;Yanqing Gao;Xudong Wang

  • Synthetically controlling the optoelectronic properties of dithieno[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene-alt-diketopyrrolopyrrole-conjugated polymers for efficient solar cells

    Shuo Sun;Peng Zhang;Jianfeng Li;Yuanke Li

  • Above-room-temperature molecular ferroelectric and fast switchable dielectric of diisopropylammonium perchlorate

    Kaige Gao;Minqiang Gu;Xiangbiao Qiu;X. N. Ying

  • Large pyroelectric response in relaxor-based ferroelectric (1−x)Pb(Mg1∕3Nb2∕3)O3–xPbTiO3 single crystals

    Yanxue Tang;Xinming Wan;Xiangyong Zhao;Xiaoming Pan

Frequent Co-Authors

Junhao Chu
Junhao Chu Chinese Academy of Sciences
Jianlu Wang
Jianlu Wang Fudan University
Xudong Wang
Xudong Wang University of Wisconsin–Madison
Hong Shen
Hong Shen Sun Yat-sen University
Weida Hu
Weida Hu Chinese Academy of Sciences
Wei Jiang
Wei Jiang Chinese Academy of Sciences
Hui Peng
Hui Peng East China Normal University
Lei Liao
Lei Liao Hunan University
Jing Sun
Jing Sun Chinese Academy of Sciences
Brahim Dkhil
Brahim Dkhil University of Paris-Saclay

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