World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
46
Citations
9391
World Ranking
11362
National Ranking
2668

Teh Y. Tan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Teh Y. Tan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 208 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Teh Y. Tan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Teh Y. Tan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Teh Y. Tan is affiliated with Duke University in the United States. Their academic profile is centered on research activities carried out within this institution.

Currently, there are no listed recent papers attributed to Teh Y. Tan, and no information is available regarding frequent co-authors or publication venues. Additionally, there is no data provided about book publications associated with this researcher.

Details about the main fields or subfields of study and topics of work covered by Teh Y. Tan have not been documented. Similarly, there are no recorded awards or distinctions linked to their career.

Due to the limited data available, further insights into Teh Y. Tan's research contributions or scientific focus areas are not documented in this profile.

Best Publications

  • Point defects, diffusion processes, and swirl defect formation in silicon

    T. Y. Tan;U. Gösele

  • Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

    T. Y. Tan;E. E. Gardner;W. K. Tice

  • Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

    L. Schubert;P. Werner;N. D. Zakharov;G. Gerth

  • A Model for the Silicon Wafer Bonding Process

    R. Stengl;T. Tan;U. Gösele

  • Oxygen diffusion and thermal donor formation in silicon

    U. Gösele;T. Y. Tan

  • A “smarter-cut” approach to low temperature silicon layer transfer

    Q.-Y. Tong;R. Scholz;U. Gösele;T.-H. Lee

  • Oxygen precipitation and the generation of dislocations in silicon

    T. Y. Tan;W. K. Tice

  • Ion-induced defects in semiconductors

    James W. Corbett;James P. Karins;Teh Y. Tan

  • Carbon-induced undersaturation of silicon self-interstitials

    R. Scholz;U. Gösele;J.-Y. Huh;T. Y. Tan

  • Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs

    T. Y. Tan;U. Gösele

  • Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials

    T. Y. Tan;U. Gösele;S. Yu

  • The contribution of vacancies to carbon out-diffusion in silicon

    R. F. Scholz;P. Werner;U. Gösele;T. Y. Tan

  • Diffusion mechanism of zinc and beryllium in gallium arsenide

    S. Yu;T. Y. Tan;U. Gösele

  • Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

    Raphael Tsu;Rodney T. Hodgson;Teh Yu Tan;John E. Baglin

  • Formation of epitaxial CoSi2 films on (001) silicon using Ti‐Co alloy and bimetal source materials

    S. L. Hsia;T. Y. Tan;P. Smith;G. E. McGuire

  • Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates

    S. L. Hsia;T. Y. Tan;P. Smith;G. E. McGuire

  • Low energy planes for tilt grain boundaries in gold

    P.J. Goodhew;T.Y. Tan;R.W. Balluffi

  • Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications

    P. S. Plekhanov;R. Gafiteanu;U. M. Gösele;T. Y. Tan

  • Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon

    T. Y. Tan

  • Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon

    T. Y. Tan;U. Gösele

Frequent Co-Authors

Ulrich Gösele
Ulrich Gösele Max Planck Society
Peter Werner
Peter Werner Max Planck Society
Otwin Breitenstein
Otwin Breitenstein Max Planck Society
Helmut Föll
Helmut Föll Kiel University
Gary W. Rubloff
Gary W. Rubloff University of Maryland, College Park
Raphael Tsu
Raphael Tsu University of North Carolina at Charlotte
Paul S. Ho
Paul S. Ho The University of Texas at Austin
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Ajeet Rohatgi
Ajeet Rohatgi Georgia Institute of Technology
David Smith
David Smith University of Oxford

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Teh Y. Tan

Trending Scientists

Recently Published Articles