World's Best Scientists 2026 revealed!

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Materials Science

D-Index
46
Citations
9391
World Ranking
11364
National Ranking
2671

Overview

Teh Y. Tan is affiliated with Duke University in the United States. Their academic profile is centered on research activities carried out within this institution.

Currently, there are no listed recent papers attributed to Teh Y. Tan, and no information is available regarding frequent co-authors or publication venues. Additionally, there is no data provided about book publications associated with this researcher.

Details about the main fields or subfields of study and topics of work covered by Teh Y. Tan have not been documented. Similarly, there are no recorded awards or distinctions linked to their career.

Due to the limited data available, further insights into Teh Y. Tan's research contributions or scientific focus areas are not documented in this profile.

Best Publications

  • Point defects, diffusion processes, and swirl defect formation in silicon

    T. Y. Tan;U. Gösele

  • Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

    T. Y. Tan;E. E. Gardner;W. K. Tice

  • Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

    L. Schubert;P. Werner;N. D. Zakharov;G. Gerth

  • A Model for the Silicon Wafer Bonding Process

    R. Stengl;T. Tan;U. Gösele

  • Oxygen diffusion and thermal donor formation in silicon

    U. Gösele;T. Y. Tan

  • A “smarter-cut” approach to low temperature silicon layer transfer

    Q.-Y. Tong;R. Scholz;U. Gösele;T.-H. Lee

  • Oxygen precipitation and the generation of dislocations in silicon

    T. Y. Tan;W. K. Tice

  • Ion-induced defects in semiconductors

    James W. Corbett;James P. Karins;Teh Y. Tan

  • Carbon-induced undersaturation of silicon self-interstitials

    R. Scholz;U. Gösele;J.-Y. Huh;T. Y. Tan

  • Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs

    T. Y. Tan;U. Gösele

  • Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials

    T. Y. Tan;U. Gösele;S. Yu

  • The contribution of vacancies to carbon out-diffusion in silicon

    R. F. Scholz;P. Werner;U. Gösele;T. Y. Tan

  • Diffusion mechanism of zinc and beryllium in gallium arsenide

    S. Yu;T. Y. Tan;U. Gösele

  • Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

    Raphael Tsu;Rodney T. Hodgson;Teh Yu Tan;John E. Baglin

  • Formation of epitaxial CoSi2 films on (001) silicon using Ti‐Co alloy and bimetal source materials

    S. L. Hsia;T. Y. Tan;P. Smith;G. E. McGuire

  • Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates

    S. L. Hsia;T. Y. Tan;P. Smith;G. E. McGuire

  • Low energy planes for tilt grain boundaries in gold

    P.J. Goodhew;T.Y. Tan;R.W. Balluffi

  • Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications

    P. S. Plekhanov;R. Gafiteanu;U. M. Gösele;T. Y. Tan

  • Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon

    T. Y. Tan

  • Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon

    T. Y. Tan;U. Gösele

Frequent Co-Authors

Ulrich Gösele
Ulrich Gösele Max Planck Society
Peter Werner
Peter Werner Max Planck Society
Otwin Breitenstein
Otwin Breitenstein Max Planck Society
Helmut Föll
Helmut Föll Kiel University
Gary W. Rubloff
Gary W. Rubloff University of Maryland, College Park
Raphael Tsu
Raphael Tsu University of North Carolina at Charlotte
Paul S. Ho
Paul S. Ho The University of Texas at Austin
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Ajeet Rohatgi
Ajeet Rohatgi Georgia Institute of Technology
David Smith
David Smith University of Oxford

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