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Helmut Föll

Helmut Föll

D-Index & Metrics

Materials Science

D-Index
52
Citations
9972
World Ranking
9559
National Ranking
534

Helmut Föll publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Helmut Föll sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 242 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Helmut Föll D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Helmut Föll sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Helmut Föll is affiliated with Kiel University in Germany. Their academic contributions are associated with this institution, reflecting a connection to the German higher education system.

No information is available regarding the scientist's published papers, co-authors, frequent publication venues, book publications, specific fields or subfields of study, or main topics of research. Additionally, there are no records of awards received by Helmut Föll.

Due to the absence of detailed data on research output, topics, or collaborations, it is not possible to elaborate further on their scholarly activities or areas of specialization. The profile remains limited to affiliation details without additional insights into academic impact or research focus.

Best Publications

  • Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon

    V. Lehmann;H. Föll

  • Formation and application of porous silicon

    H. Föll;M. Christophersen;J. Carstensen;G. Hasse

  • Photonic crystals : advances in design, fabrication, and characterization

    Kurt Busch;Stefan Lolkes;Ralf B. Wehrspohn;Helmut Foll

  • Pores in III–V Semiconductors

    Helmut Föll;Sergiu Langa;Sergiu Langa;Jürgen Carstensen;Marc Christophersen

  • The formation of swirl defects in silicon by agglomeration of self-interstitials

    H. Föll;U. Gösele;B.O. Kolbesen

  • Formation and nature of swirl defects in silicon

    H. Föll;B. O. Kolbesen

  • Properties of silicon-electrolyte junctions and their application to silicon characterization

    H. Föll

  • Pore formation mechanisms for the Si-HF system

    J Carstensen;M Christophersen;H Föll

  • Transmission electron microscopy of the formation of nickel silicides

    H. Föll;P. S. Ho;K. N. Tu

  • Processing of Three‐Dimensional Microstructures Using Macroporous n‐Type Silicon

    S. Ottow;V. Lehmann;H. Föll

  • Macroporous Silicon: A Two‐Dimensional Photonic Bandgap Material Suitable for the Near‐Infrared Spectral Range

    A. Birner;U. Grüning;S. Ottow;A. Schneider

  • Formation of Porous Layers with Different Morphologies during Anodic Etching of n ‐ InP

    S. Langa;S. Langa;I. M. Tiginyanu;J. Carstensen;M. Christophersen

  • Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system

    King-Ning Tu;G. Ottaviani;U. Gösele;H. Föll

  • A simple method for the analysis of dislocation loops by means of the inside‐outside contrast on transmission electron micrographs

    H. Föll;M. Wilkens

  • On the diamond-cubic to hexagonal phase transformation in silicon

    T. Y. Tan;H. Föll;S. M. Hu

  • CELLO: an advanced LBIC measurement technique for solar cell local characterization

    J. Carstensen;G. Popkirov;J. Bahr;H. Föll

  • Self-organized growth of single crystals of nanopores

    S. Langa;I. M. Tiginyanu;J. Carstensen;M. Christophersen

  • Minority Carrier Diffusion Length Mapping in Silicon Wafers Using a Si‐Electrolyte‐Contact

    V. Lehmann;H. Föll

  • Observation of crossing pores in anodically etched n-GaAs

    S. Langa;J. Carstensen;M. Christophersen;H. Föll

  • Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures

    S. Langa;J. Carstensen;I. M. Tiginyanu;M. Christophersen

Frequent Co-Authors

Ion Tiginyanu
Ion Tiginyanu Technical University of Moldova
Cheng Fang
Cheng Fang University of Newcastle Australia
Ulrich Gösele
Ulrich Gösele Max Planck Society
Robert W. Boyd
Robert W. Boyd University of Ottawa
Rainer Adelung
Rainer Adelung Kiel University
King-Ning Tu
King-Ning Tu City University of Hong Kong
Teh Y. Tan
Teh Y. Tan Duke University
Ralf B. Wehrspohn
Ralf B. Wehrspohn Martin Luther University Halle-Wittenberg
Otwin Breitenstein
Otwin Breitenstein Max Planck Society
Marianna Kemell
Marianna Kemell University of Helsinki

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