World's Best Scientists 2026 revealed!
William Streifer

William Streifer

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
9020
World Ranking
2124
National Ranking
22

William Streifer publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where William Streifer sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 311 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

William Streifer D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where William Streifer sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Coupled mode theory of parallel waveguides

    Unknown

  • Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers

    W. Streifer;D. Scifres;R. Burnham

  • Effect of external reflectors on longitudinal modes of distributed feedback lasers

    W. Streifer;R. Burnham;D. Scifres

  • Coupled wave analysis of DFB and DBR lasers

    W. Streifer;D. Scifres;R. Burnham

  • Silicon nitride films on silicon for optical waveguides

    W Stutius;W Streifer

  • Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror

    D.R. Scifres;C. Lindström;R.D. Burnham;W. Streifer

  • Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and waveguides - I

    W. Streifer;D. Scifres;R. Burnham

  • Distributed‐feedback single heterojunction GaAs diode laser

    D. R. Scifres;R. D. Burnham;W. Streifer

  • Experimental and analytic studies of coupled multiple stripe diode lasers

    D. Scifres;W. Streifer;R. Burnham

  • Phase-locked semiconductor laser array

    D. R. Scifres;R. D. Burnham;W. Streifer

  • Analysis of second-order gratings

    A. Hardy;D.F. Welch;W. Streifer

  • Modal analysis of linear Talbot-cavity semiconductor lasers

    David Mehuys;William G. Streifer;Robert G. Waarts;David F. Welch

  • High power coupled multiple stripe quantum well injection lasers

    D. R. Scifres;R. D. Burnham;W. Streifer

  • Advances in diode laser pumps

    W. Streifer;D.R. Scifres;G.L. Harnagel;D.F. Welch

  • High power with high efficiency in a narrow single‐lobed beam from a diode laser array in an external cavity

    C. J. Chang‐Hasnain;J. Berger;D. R. Scifres;W. Streifer

  • Hybrid semiconductor laser/detectors

    Donald R. Scifres;Robert D. Burnham;William Streifer

  • Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion

    M. D. Camras;N. Holonyak;R. D. Burnham;W. Streifer

  • Optical analysis of multiple-quantum-well lasers

    W. Streifer;D. R. Scifres;R. D. Burnham

  • TM-mode coupling coefficients in guided-wave distributed feedback lasers

    W. Streifer;D. R. Scifres;R. D. Burnham

  • Application of the equivalent-index method to DH diode lasers

    William Streifer;Eli Kapon

  • Longitudinal mode spectra of diode lasers

    W. Streifer;D. R. Scifres;R. D. Burnham

  • Gain characteristics of strained quantum well lasers

    D. F. Welch;W. Streifer;C. F. Schaus;S. Sun

  • Beam scanning with twin‐stripe injection lasers

    D. R. Scifres;W. Streifer;R. D. Burnham

  • Highly collimated laser beams from electrically pumped SH GaAs/GaAlAs distributed−feedback lasers

    D. R. Scifres;R. D. Burnham;W. Streifer

  • High reflectivity GaAs‐AlGaAs mirrors fabricated by metalorganic chemical vapor deposition

    R. L. Thornton;R. D. Burnham;W. Streifer

  • Leaky wave room‐temperature double heterostructure GaAs:GaAlAs diode laser

    D. R. Scifres;W. Streifer;R. D. Burnham

  • Lateral beam collimation of a phased array semiconductor laser

    D. Scifres;R. D. Burnham;W. Streifer;M. Bernstein

  • Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant

    R.D. Burnham;W. Streifer;D.R. Scifres;C. Lindström

  • Continuous wave high‐power, high‐temperature semiconductor laser phase‐locked arrays

    D. R. Scifres;R. D. Burnham;W. Streifer

  • Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition

    R. D. Burnham;D. R. Scifres;W. Streifer

Frequent Co-Authors

Robert D. Burnham
Robert D. Burnham Xerox (France)
Donald R. Scifres
Donald R. Scifres SDL Ventures
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
David F. Welch
David F. Welch Infinera (United States)
Connie J. Chang-Hasnain
Connie J. Chang-Hasnain University of California, Berkeley
James J. Coleman
James J. Coleman The University of Texas at Dallas
Fernando Ponce
Fernando Ponce Arizona State University

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Related Online Degrees & Career Pathways

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