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Engineering and Technology

D-Index
41
Citations
6099
World Ranking
7035
National Ranking
144

Overview

Hiroyasu Ishikawa is affiliated with the Shibaura Institute of Technology in Japan and conducts research primarily in the fields of Engineering and Computer Science. Their main areas of focus include Electrical and Electronic Engineering, Aerospace Engineering, Computer Networks and Communications, and Biomedical Engineering.

Their research topics emphasize advanced aspects of wireless communication and antenna design, with particular attention to:

  • Advanced MIMO Systems Optimization
  • Power Line Communications and Noise
  • Full-Duplex Wireless Communications
  • Antenna Design and Analysis
  • Antenna Design and Optimization
  • Wireless Body Area Networks
  • Indoor and Outdoor Localization Technologies

Hiroyasu Ishikawa has contributed to several academic publications, including articles in notable venues such as IEICE Communications Express, IEEE Antennas and Wireless Propagation Letters, and IEICE Transactions on Communications. Recent papers authored or co-authored by them include:

  • Maximum Positioning Error Estimation Method for Detecting User Positions with Unmanned Aerial Vehicle based on Doppler Shifts, 2020, IEICE Transactions on Communications
  • Outdoor experimental evaluation of asynchronous successive interference cancellation for 5G in shared spectrum with different radio systems, 2021, IEICE Communications Express
  • A simplified evaluation of protection distance in areal spectrum sharing, 2021, IEICE Communications Express
  • Extension to individual TCP transmission of instantaneous throughput based on occupied duration, 2020, IEICE Communications Express
  • A Wideband Printed Dipole Antenna With Small Footprint Using a Miniaturized Microstrip-to-Coplanar Strips (CPS) Transition, 2025, IEEE Antennas and Wireless Propagation Letters

Collaboration is a part of their professional network, often working alongside recurring co-authors including Ryochi Kataoka, Issei Kanno, Toshinori Suzuki, Kosuke Yamazaki, and Yoji Kishi. Each of these collaborators has contributed to multiple joint projects or papers with Ishikawa.

Their publication record also reflects a distribution across several key venues, with the majority of their work appearing in:

  • IEICE Communications Express
  • IEEE Antennas and Wireless Propagation Letters
  • IEICE Transactions on Communications

This professional profile outlines a focused engagement with engineering disciplines and research topics related to wireless systems optimization, antenna technologies, and communication network performance. The papers authored by Ishikawa provide a breadth of study within these interconnected areas, contributing to the literature on both theoretical and applied aspects of communications engineering.

Best Publications

  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

    G. Yu;G. Wang;H. Ishikawa;Masayoshi Umeno

  • Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Thermal stability of GaN on (111)Si substrate

    Hiroyasu Ishikawa;Kensaku Yamamoto;Takashi Egawa;Tetsuo Soga

  • Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

    N Miura;T Nanjo;M Suita;T Oishi

  • Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

    S. Arulkumaran;T. Egawa;S. Matsui;H. Ishikawa

  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

    N. Nakada;M. Nakaji;Hiroyasu Ishikawa;T. Egawa

  • High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

    S. Arulkumaran;T. Egawa;Hiroyasu Ishikawa;T. Jimbo

  • Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition.

    Takashi Egawa;Tetsuji Moku;Hiroyasu Ishikawa;Kouji Ohtsuka

  • High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

    M. Miyoshi;H. Ishikawa;T. Egawa;K. Asai

  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

    T. Egawa;Hiroyasu Ishikawa;M. Umeno;T. Jimbo

  • Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

    T. Egawa;Guang-Yuan Zhao;H. Ishikawa;H. Umeno

  • Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

    H. Ishikawa;G. Y. Zhao;N. Nakada;T. Egawa

  • High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

    T. Egawa;B. Zhang;H. Ishikawa

  • Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes

    S. Arulkumaran;T. Egawa;H. Ishikawa;M. Umeno

  • Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

    S. Arulkumaran;M. Sakai;T. Egawa;H. Ishikawa

  • Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

    G. Yu;H. Ishikawa;Masayoshi Umeno;Takashi Egawa

  • High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

    M. Miyoshi;H. Ishikawa;T. Egawa;K. Asai

Frequent Co-Authors

Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Masayoshi Umeno
Masayoshi Umeno Chubu University
Masayoshi Umeno
Masayoshi Umeno Chubu University
Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Norihiko Nishizawa
Norihiko Nishizawa Nagoya University
Tetsuzo Ueda
Tetsuzo Ueda Panasonic (Japan)
Masashi Yoshimura
Masashi Yoshimura Osaka University
Hiroshi Ishikawa
Hiroshi Ishikawa National Institute of Advanced Industrial Science and Technology

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