What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Optoelectronics
- Light-emitting diode
Hiroyasu Ishikawa spends much of his time researching Optoelectronics, Sapphire, Wide-bandgap semiconductor, Chemical vapor deposition and Metalorganic vapour phase epitaxy.
His research in Optoelectronics intersects with topics in Transistor and Transconductance.
His Sapphire research incorporates themes from Ellipsometry, Exciton, Heterojunction, Refractive index and Molecular physics.
He focuses mostly in the field of Heterojunction, narrowing it down to matters related to Electron mobility and, in some cases, Epitaxy and Fermi gas.
The concepts of his Wide-bandgap semiconductor study are interwoven with issues in Threshold voltage, Quantum tunnelling and Analytical chemistry.
His biological study spans a wide range of topics, including Full width at half maximum, Thin film, Layer, Substrate and Photoluminescence.
His most cited work include:
- Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method (226 citations)
- Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride (195 citations)
- Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density (168 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of investigation include Optoelectronics, Sapphire, Metalorganic vapour phase epitaxy, Chemical vapor deposition and Algan gan.
His studies deal with areas such as Layer and Transistor, Transconductance, High-electron-mobility transistor as well as Optoelectronics.
His Sapphire research includes elements of Wide-bandgap semiconductor, Gallium nitride, Heterojunction and Epitaxy.
His Metalorganic vapour phase epitaxy research incorporates elements of Optics, Thin film, Mineralogy, Sapphire substrate and Band gap.
His study in Chemical vapor deposition is interdisciplinary in nature, drawing from both Full width at half maximum, Cathodoluminescence, Photoluminescence, Analytical chemistry and Substrate.
His Algan gan research is multidisciplinary, relying on both Drain current, Metal and Semi insulating.
He most often published in these fields:
- Optoelectronics (84.86%)
- Sapphire (35.32%)
- Metalorganic vapour phase epitaxy (34.86%)
What were the highlights of his more recent work (between 2004-2018)?
- Optoelectronics (84.86%)
- Metalorganic vapour phase epitaxy (34.86%)
- Thin film (9.17%)
In recent papers he was focusing on the following fields of study:
Hiroyasu Ishikawa mainly investigates Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, Chemical vapor deposition and Sapphire.
His Optoelectronics research is multidisciplinary, incorporating elements of Algan gan, Transconductance and Layer, Substrate, Epitaxy.
The various areas that Hiroyasu Ishikawa examines in his Metalorganic vapour phase epitaxy study include Deposition and Analytical chemistry.
His study looks at the intersection of Thin film and topics like X-ray photoelectron spectroscopy with Dielectric, Orders of magnitude and Electron beam physical vapor deposition.
His work in Chemical vapor deposition addresses issues such as Crystallography, which are connected to fields such as Nucleation and Scanning electron microscope.
His studies examine the connections between Sapphire and genetics, as well as such issues in High-electron-mobility transistor, with regards to Aluminium nitride and Gallium nitride.
Between 2004 and 2018, his most popular works were:
- Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon (119 citations)
- High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD (69 citations)
- Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors (44 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Optoelectronics
- Light-emitting diode
His scientific interests lie mostly in Optoelectronics, Sapphire, Chemical vapor deposition, Transconductance and Metalorganic vapour phase epitaxy.
The study incorporates disciplines such as Substrate, Breakdown voltage and Epitaxy in addition to Optoelectronics.
His studies in Substrate integrate themes in fields like Crystallography, Thin film, Combustion chemical vapor deposition and Full width at half maximum.
Hiroyasu Ishikawa has researched Breakdown voltage in several fields, including Electrical resistivity and conductivity, Buffer, Silicon and Analytical chemistry.
His Chemical vapor deposition study frequently draws connections to other fields, such as Layer.
In Transconductance, he works on issues like High-electron-mobility transistor, which are connected to Threshold voltage.
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