World's Best Scientists 2026 revealed!
Tetsuzo Ueda

Tetsuzo Ueda

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
11571
World Ranking
2185
National Ranking
76

Tetsuzo Ueda publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tetsuzo Ueda sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 305 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tetsuzo Ueda D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tetsuzo Ueda sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 55 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tetsuzo Ueda is affiliated with Panasonic (Japan) and has contributed to the field of Materials Science with a focus on semiconductor materials and devices. Their research encompasses several interrelated topics and subfields within materials chemistry, electrical and electronic engineering, and condensed matter physics.

The scientist's work primarily explores materials such as Ga2O3 and related oxides, with a specialized emphasis on their electronic and structural properties. They have contributed to advancements in semiconductor devices and circuit design, as well as studies on ZnO doping and GaN-based semiconductor materials. These focal areas align with their broader engagement in electrical and optical materials science.

Tetsuzo Ueda's recent publications include:

  • "Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates" (2023, Applied Physics Express)
  • "Contents" (2023, Gastrointestinal Endoscopy)
  • "Reduced on-State Resistance of Hybrid-Drain Gate Injection Transistors by Using Tapered Through Recess and Regrowth Gate Technology" (2025, physica status solidi (a))
  • "Research Trends on Entrepreneur Engineering" (2022, The Journal of The Institute of Image Information and Television Engineers)
  • "Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga2O3 RF MESFETs" (2025, Japanese Journal of Applied Physics)

The venues in which Ueda most frequently publishes include:

  • Japanese Journal of Applied Physics
  • Applied Physics Express
  • Gastrointestinal Endoscopy
  • physica status solidi (a)
  • The Journal of The Institute of Image Information and Television Engineers

Ueda collaborates regularly with several coauthors, indicating a network across related semiconductor research fields. Frequent collaborators include Yuji Ando, H. Takahashi, Ryutaro Makisako, Hikaru Ikeda, and Jun Suda.

Their subfields of study indicate strong interdisciplinary contributions, with three publications in Materials Chemistry and Electrical and Electronic Engineering respectively, along with contributions in Electronic, Optical and Magnetic Materials and Condensed Matter Physics.

Best Publications

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

    Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo

  • GaN on Si Technologies for Power Switching Devices

    Masahiro Ishida;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

  • Nitride semiconductor device

    Hiroaki Ueno;Manabu Yanagihara;Tetsuzo Ueda;Yasuhiro Uemoto

  • Field effect transistor and method for fabricating the same

    Masahiro Hikita;Tetsuzo Ueda;Manabu Yanagihara;Yasuhiro Uemoto

  • Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

    Saichiro Kaneko;Masayuki Kuroda;Manabu Yanagihara;Ayanori Ikoshi

  • Nitride semiconductor device and method for fabricating the same

    Yasuhiro Uemoto;Masahiro Hikita;Tetsuzo Ueda;Tsuyoshi Tanaka

  • 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

    Tatsuo Morita;Satoshi Tamura;Yoshiharu Anda;Masahiro Ishida

  • AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

    M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno

  • Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

    Kenichiro Tanaka;Tatsuo Morita;Hidekazu Umeda;Saichiro Kaneko

  • SUBSTRATE FOR EPITAXIAL TREATMENT, EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD

    Ueda Tetsuzo

  • Crystal growth of SiC by step-controlled epitaxy

    Tetsuzo Ueda;Hironori Nishino;Hiroyuki Matsunami

  • Method of forming gallium nitride crystal

    Masaaki Yuri;Tetsuzo Ueda;Takaaki Baba

  • 650 V 3.1 mΩcm 2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

    T. Morita;M. Yanagihara;H. Ishida;M. Hikita

  • Epitaxial film produced by sequential hydride vapor phase epitaxy

    Glenn S. Solomon;David J. Miller;Tetsuzo Ueda

  • Field-effect transistor and its manufacturing method

    Masahiro Hikita;Takeshi Tanaka;Tetsuzo Ueda;Yasuhiro Uemoto

  • 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

    Y. Uemoto;D. Shibata;M. Yanagihara;H. Ishida

  • GaN transistors on Si for switching and high-frequency applications

    Tetsuzo Ueda;Masahiro Ishida;Tsuyoshi Tanaka;Daisuke Ueda

  • Recent advances in GaN transistors for future emerging applications

    Manabu Yanagihara;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka

  • High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal

    Kenji Orita;Satoshi Tamura;Toshiyuki Takizawa;Tetsuzo Ueda

  • 1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

    Daisuke Shibata;Ryo Kajitani;Masahiro Ogawa;Kenichiro Tanaka

Frequent Co-Authors

Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Yasuhiro Uemoto
Yasuhiro Uemoto Panasonic (Japan)
Shigeru Kishimoto
Shigeru Kishimoto Nagoya University
Takashi Mizutani
Takashi Mizutani Nagoya University
Matteo Meneghini
Matteo Meneghini University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Toshifumi Ise
Toshifumi Ise Nara Gakuen Incorporated Educational Institution
Tamotsu Hashizume
Tamotsu Hashizume Hokkaido University
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University

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