World's Best Scientists 2026 revealed!
Tetsuzo Ueda

Tetsuzo Ueda

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
11571
World Ranking
2185
National Ranking
76

Overview

Tetsuzo Ueda is affiliated with Panasonic (Japan) and has contributed to the field of Materials Science with a focus on semiconductor materials and devices. Their research encompasses several interrelated topics and subfields within materials chemistry, electrical and electronic engineering, and condensed matter physics.

The scientist's work primarily explores materials such as Ga2O3 and related oxides, with a specialized emphasis on their electronic and structural properties. They have contributed to advancements in semiconductor devices and circuit design, as well as studies on ZnO doping and GaN-based semiconductor materials. These focal areas align with their broader engagement in electrical and optical materials science.

Tetsuzo Ueda's recent publications include:

  • "Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates" (2023, Applied Physics Express)
  • "Contents" (2023, Gastrointestinal Endoscopy)
  • "Reduced on-State Resistance of Hybrid-Drain Gate Injection Transistors by Using Tapered Through Recess and Regrowth Gate Technology" (2025, physica status solidi (a))
  • "Research Trends on Entrepreneur Engineering" (2022, The Journal of The Institute of Image Information and Television Engineers)
  • "Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga2O3 RF MESFETs" (2025, Japanese Journal of Applied Physics)

The venues in which Ueda most frequently publishes include:

  • Japanese Journal of Applied Physics
  • Applied Physics Express
  • Gastrointestinal Endoscopy
  • physica status solidi (a)
  • The Journal of The Institute of Image Information and Television Engineers

Ueda collaborates regularly with several coauthors, indicating a network across related semiconductor research fields. Frequent collaborators include Yuji Ando, H. Takahashi, Ryutaro Makisako, Hikaru Ikeda, and Jun Suda.

Their subfields of study indicate strong interdisciplinary contributions, with three publications in Materials Chemistry and Electrical and Electronic Engineering respectively, along with contributions in Electronic, Optical and Magnetic Materials and Condensed Matter Physics.

Best Publications

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

    Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo

  • GaN on Si Technologies for Power Switching Devices

    Masahiro Ishida;Tetsuzo Ueda;Tsuyoshi Tanaka;Daisuke Ueda

  • Nitride semiconductor device

    Hiroaki Ueno;Manabu Yanagihara;Tetsuzo Ueda;Yasuhiro Uemoto

  • Field effect transistor and method for fabricating the same

    Masahiro Hikita;Tetsuzo Ueda;Manabu Yanagihara;Yasuhiro Uemoto

  • Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

    Saichiro Kaneko;Masayuki Kuroda;Manabu Yanagihara;Ayanori Ikoshi

  • Nitride semiconductor device and method for fabricating the same

    Yasuhiro Uemoto;Masahiro Hikita;Tetsuzo Ueda;Tsuyoshi Tanaka

  • 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

    Tatsuo Morita;Satoshi Tamura;Yoshiharu Anda;Masahiro Ishida

  • AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

    M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno

  • Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

    Kenichiro Tanaka;Tatsuo Morita;Hidekazu Umeda;Saichiro Kaneko

  • SUBSTRATE FOR EPITAXIAL TREATMENT, EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD

    Ueda Tetsuzo

  • Crystal growth of SiC by step-controlled epitaxy

    Tetsuzo Ueda;Hironori Nishino;Hiroyuki Matsunami

  • Method of forming gallium nitride crystal

    Masaaki Yuri;Tetsuzo Ueda;Takaaki Baba

  • 650 V 3.1 mΩcm 2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

    T. Morita;M. Yanagihara;H. Ishida;M. Hikita

  • Epitaxial film produced by sequential hydride vapor phase epitaxy

    Glenn S. Solomon;David J. Miller;Tetsuzo Ueda

  • Field-effect transistor and its manufacturing method

    Masahiro Hikita;Takeshi Tanaka;Tetsuzo Ueda;Yasuhiro Uemoto

  • 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

    Y. Uemoto;D. Shibata;M. Yanagihara;H. Ishida

  • GaN transistors on Si for switching and high-frequency applications

    Tetsuzo Ueda;Masahiro Ishida;Tsuyoshi Tanaka;Daisuke Ueda

  • Recent advances in GaN transistors for future emerging applications

    Manabu Yanagihara;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka

  • High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal

    Kenji Orita;Satoshi Tamura;Toshiyuki Takizawa;Tetsuzo Ueda

  • 1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

    Daisuke Shibata;Ryo Kajitani;Masahiro Ogawa;Kenichiro Tanaka

Frequent Co-Authors

Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Yasuhiro Uemoto
Yasuhiro Uemoto Panasonic (Japan)
Matteo Meneghini
Matteo Meneghini University of Padua
Takashi Mizutani
Takashi Mizutani Nagoya University
Enrico Zanoni
Enrico Zanoni University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Toshifumi Ise
Toshifumi Ise Nara Gakuen Incorporated Educational Institution
Tamotsu Hashizume
Tamotsu Hashizume Hokkaido University
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students interested in Electronics and Electrical Engineering, exploring related online degrees can offer greater flexibility and tailored career options. Many online universities with multiple start dates allow learners to begin their studies at various times throughout the year, making it easier to fit education into busy schedules.

For those looking to quickly upskill or pivot within the field, 6 month programs provide condensed, career-focused training that can lead to well-paying roles without the lengthy commitment of a traditional degree.

Electrical and Electronics Engineering careers also cater to diverse personalities, including introverts who thrive in technical roles. The list of introvert jobs features several positions well-suited to this field, combining problem-solving with individual focus.

Additionally, students interested in leadership or project management within engineering can consider accelerated options. The quickest online project management degree programs enable professionals to gain essential management skills in less time, opening doors to supervisory roles in engineering projects.

Best Scientists Citing Tetsuzo Ueda

Trending Scientists