What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Optoelectronics
Tetsuzo Ueda mainly focuses on Optoelectronics, Layer, Transistor, Wide-bandgap semiconductor and Gallium nitride.
The concepts of his Optoelectronics study are interwoven with issues in Breakdown voltage, Epitaxy, Field-effect transistor, Power semiconductor device and Substrate.
His studies in Power semiconductor device integrate themes in fields like Power electronics and High voltage.
His Layer research includes elements of Electronic engineering and Semiconductor.
His Transistor research incorporates themes from Inverter and Heterojunction.
His research in Gallium nitride intersects with topics in Logic gate and Heat sink.
His most cited work include:
- Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (621 citations)
- GaN-on-Si Power Technology: Devices and Applications (420 citations)
- GaN on Si Technologies for Power Switching Devices (250 citations)
What are the main themes of his work throughout his whole career to date?
The scientist’s investigation covers issues in Optoelectronics, Layer, Transistor, Semiconductor and Substrate.
His work deals with themes such as Nitride semiconductors, Gallium nitride, Semiconductor device, Epitaxy and Field-effect transistor, which intersect with Optoelectronics.
His work carried out in the field of Layer brings together such families of science as Electronic engineering and Band gap.
His Transistor research integrates issues from Heterojunction and Power semiconductor device.
His research in Power semiconductor device tackles topics such as Breakdown voltage which are related to areas like High voltage.
His study in Substrate is interdisciplinary in nature, drawing from both Silicon and Nitride.
He most often published in these fields:
- Optoelectronics (78.90%)
- Layer (35.26%)
- Transistor (26.88%)
What were the highlights of his more recent work (between 2015-2019)?
- Optoelectronics (78.90%)
- Transistor (26.88%)
- Gallium nitride (14.16%)
In recent papers he was focusing on the following fields of study:
His primary areas of study are Optoelectronics, Transistor, Gallium nitride, Electrical engineering and Power semiconductor device.
His biological study spans a wide range of topics, including Threshold voltage, Algan gan and Breakdown voltage.
His biological study deals with issues like Epitaxy, which deal with fields such as Thermal oxidation.
His Transistor study combines topics from a wide range of disciplines, such as Heterojunction, Hysteresis and Current.
The concepts of his Gallium nitride study are interwoven with issues in Wide-bandgap semiconductor, Substrate, Logic gate and Energy conversion efficiency.
Tetsuzo Ueda has researched Power semiconductor device in several fields, including Electronic circuit and Reliability.
Between 2015 and 2019, his most popular works were:
- GaN-on-Si Power Technology: Devices and Applications (420 citations)
- 1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure (34 citations)
- Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient (33 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
Tetsuzo Ueda mainly investigates Optoelectronics, Transistor, Gallium nitride, Power semiconductor device and Electrical engineering.
Tetsuzo Ueda combines subjects such as Layer and Breakdown voltage with his study of Optoelectronics.
The Transistor study combines topics in areas such as Heterojunction and Current.
His Gallium nitride research includes themes of Substrate, Logic gate and Voltage.
Tetsuzo Ueda interconnects Sheet resistance, Power electronics, Silicon and MOSFET in the investigation of issues within Logic gate.
His Power semiconductor device research includes elements of Field-effect transistor and Reliability.
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