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Yasuhiro Uemoto

Yasuhiro Uemoto

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
8136
World Ranking
4432
National Ranking
171

Overview

Yasuhiro Uemoto is affiliated with Panasonic in Japan, contributing to the scientific community from this position. Their career is centered in Japan, where they conduct research and development activities.

No documented publications, frequent co-authors, or specific research topics are currently attributed to their profile. Details regarding published books, main fields of study, subfields, or specialized areas of work have not been recorded within the accessible data.

There are no recorded awards or recognitions linked to Yasuhiro Uemoto at this time.

This profile reflects the currently available information regarding Yasuhiro Uemoto's academic and professional background without extrapolation beyond the confirmed data.

Best Publications

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

    Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo

  • Nitride semiconductor device

    Hiroaki Ueno;Manabu Yanagihara;Tetsuzo Ueda;Yasuhiro Uemoto

  • Field effect transistor and method for fabricating the same

    Masahiro Hikita;Tetsuzo Ueda;Manabu Yanagihara;Yasuhiro Uemoto

  • Nitride semiconductor device and method for manufacturing same

    Hideyuki Okita;Yasuhiro Uemoto;Masahiro Hikita;Hidenori Takeda

  • Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

    Saichiro Kaneko;Masayuki Kuroda;Manabu Yanagihara;Ayanori Ikoshi

  • Nitride semiconductor device and method for fabricating the same

    Yasuhiro Uemoto;Masahiro Hikita;Tetsuzo Ueda;Tsuyoshi Tanaka

  • 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

    Tatsuo Morita;Satoshi Tamura;Yoshiharu Anda;Masahiro Ishida

  • AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

    M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno

  • Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

    Kenichiro Tanaka;Tatsuo Morita;Hidekazu Umeda;Saichiro Kaneko

  • Semiconductor device having capacitor and manufacturing method thereof

    Koji Arita;Eiji Fujii;Yasuhiro Shimada;Yasuhiro Uemoto

  • 650 V 3.1 mΩcm 2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

    T. Morita;M. Yanagihara;H. Ishida;M. Hikita

  • Field-effect transistor and its manufacturing method

    Masahiro Hikita;Takeshi Tanaka;Tetsuzo Ueda;Yasuhiro Uemoto

  • 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

    Y. Uemoto;D. Shibata;M. Yanagihara;H. Ishida

  • Recent advances in GaN transistors for future emerging applications

    Manabu Yanagihara;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka

  • GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

    Yasuhiro Uemoto;Tatsuo Morita;Ayanori Ikoshi;Hidekazu Umeda

  • Transistor and method for operating the same

    Daisuke Ueda;Tsuyoshi Tanaka;Yasuhiro Uemoto;Tetsuzo Ueda

  • Capacitor for integrated circuit and its fabrication method

    Koji Arita;Masamichi Azuma;Eiji Fujii;Atsuo Inoue

  • AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

    Naohiro Tsurumi;Hiroaki Ueno;Tomohiro Murata;Hidetoshi Ishida

  • A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

    H. Ishida;Y. Hirose;T. Murata;Y. Ikeda

  • Method for manufacturing a semiconductor device having a III-V nitride semiconductor

    Tomohiro Murata;Yutaka Hirose;Tsuyoshi Tanaka;Yasuhiro Uemoto

Frequent Co-Authors

Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Tetsuzo Ueda
Tetsuzo Ueda Panasonic (Japan)
Akihiko Nishio
Akihiko Nishio Panasonic (Japan)
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Shizuo Fujita
Shizuo Fujita Kyoto University
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Carlos A. Paz de Araujo
Carlos A. Paz de Araujo University of Colorado Colorado Springs
Sufi Zafar
Sufi Zafar IBM (United States)
Yifeng Wu
Yifeng Wu Transphorm Inc.

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