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Yasuhiro Uemoto

Yasuhiro Uemoto

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
8136
World Ranking
4432
National Ranking
171

Yasuhiro Uemoto publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yasuhiro Uemoto sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 174 publications — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yasuhiro Uemoto D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yasuhiro Uemoto sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yasuhiro Uemoto is affiliated with Panasonic in Japan, contributing to the scientific community from this position. Their career is centered in Japan, where they conduct research and development activities.

No documented publications, frequent co-authors, or specific research topics are currently attributed to their profile. Details regarding published books, main fields of study, subfields, or specialized areas of work have not been recorded within the accessible data.

There are no recorded awards or recognitions linked to Yasuhiro Uemoto at this time.

This profile reflects the currently available information regarding Yasuhiro Uemoto's academic and professional background without extrapolation beyond the confirmed data.

Best Publications

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

    Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo

  • Nitride semiconductor device

    Hiroaki Ueno;Manabu Yanagihara;Tetsuzo Ueda;Yasuhiro Uemoto

  • Field effect transistor and method for fabricating the same

    Masahiro Hikita;Tetsuzo Ueda;Manabu Yanagihara;Yasuhiro Uemoto

  • Nitride semiconductor device and method for manufacturing same

    Hideyuki Okita;Yasuhiro Uemoto;Masahiro Hikita;Hidenori Takeda

  • Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

    Saichiro Kaneko;Masayuki Kuroda;Manabu Yanagihara;Ayanori Ikoshi

  • Nitride semiconductor device and method for fabricating the same

    Yasuhiro Uemoto;Masahiro Hikita;Tetsuzo Ueda;Tsuyoshi Tanaka

  • 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

    Tatsuo Morita;Satoshi Tamura;Yoshiharu Anda;Masahiro Ishida

  • AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

    M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno

  • Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

    Kenichiro Tanaka;Tatsuo Morita;Hidekazu Umeda;Saichiro Kaneko

  • Semiconductor device having capacitor and manufacturing method thereof

    Koji Arita;Eiji Fujii;Yasuhiro Shimada;Yasuhiro Uemoto

  • 650 V 3.1 mΩcm 2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

    T. Morita;M. Yanagihara;H. Ishida;M. Hikita

  • Field-effect transistor and its manufacturing method

    Masahiro Hikita;Takeshi Tanaka;Tetsuzo Ueda;Yasuhiro Uemoto

  • 8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

    Y. Uemoto;D. Shibata;M. Yanagihara;H. Ishida

  • Recent advances in GaN transistors for future emerging applications

    Manabu Yanagihara;Yasuhiro Uemoto;Tetsuzo Ueda;Tsuyoshi Tanaka

  • GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

    Yasuhiro Uemoto;Tatsuo Morita;Ayanori Ikoshi;Hidekazu Umeda

  • Transistor and method for operating the same

    Daisuke Ueda;Tsuyoshi Tanaka;Yasuhiro Uemoto;Tetsuzo Ueda

  • Capacitor for integrated circuit and its fabrication method

    Koji Arita;Masamichi Azuma;Eiji Fujii;Atsuo Inoue

  • AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

    Naohiro Tsurumi;Hiroaki Ueno;Tomohiro Murata;Hidetoshi Ishida

  • A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

    H. Ishida;Y. Hirose;T. Murata;Y. Ikeda

  • Method for manufacturing a semiconductor device having a III-V nitride semiconductor

    Tomohiro Murata;Yutaka Hirose;Tsuyoshi Tanaka;Yasuhiro Uemoto

Frequent Co-Authors

Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Tetsuzo Ueda
Tetsuzo Ueda Panasonic (Japan)
Akihiko Nishio
Akihiko Nishio Panasonic (Japan)
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Shizuo Fujita
Shizuo Fujita Kyoto University
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Carlos A. Paz de Araujo
Carlos A. Paz de Araujo University of Colorado Colorado Springs
Sufi Zafar
Sufi Zafar IBM (United States)
Yifeng Wu
Yifeng Wu Transphorm Inc.

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