Yasuhiro Uemoto mainly investigates Optoelectronics, Transistor, Layer, Electrical engineering and Power semiconductor device. His work deals with themes such as Field-effect transistor, Ohmic contact and Substrate, which intersect with Optoelectronics. His Transistor research focuses on Heterojunction and how it connects with Sapphire, Electrical resistance and conductance, Passivation, Electronic circuit simulation and RF switch.
His studies examine the connections between Layer and genetics, as well as such issues in Semiconductor, with regards to Cathode ray, Nitride, Schottky diode and Semiconductor device. In his research, Power electronics and Noise figure is intimately related to Gallium nitride, which falls under the overarching field of Electrical engineering. Power semiconductor device and Breakdown voltage are frequently intertwined in his study.
Optoelectronics, Transistor, Electrical engineering, Semiconductor device and Capacitor are his primary areas of study. His Optoelectronics research includes elements of Layer, Nitride semiconductors, Substrate and Voltage. Yasuhiro Uemoto has researched Transistor in several fields, including Wide-bandgap semiconductor, Gallium nitride, Breakdown voltage and Thin-film transistor.
His Gallium nitride study combines topics from a wide range of disciplines, such as Diode and Logic gate. As a part of the same scientific study, Yasuhiro Uemoto usually deals with the Breakdown voltage, concentrating on Power semiconductor device and frequently concerns with Field-effect transistor. His Capacitor study incorporates themes from Dielectric, Ferroelectricity and Electronic engineering.
Yasuhiro Uemoto spends much of his time researching Optoelectronics, Transistor, Gallium nitride, Nitride semiconductors and Electrical engineering. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Ohmic contact, Substrate and Breakdown voltage. He combines subjects such as Amplifier, Passivation and High voltage with his study of Breakdown voltage.
His Transistor study combines topics in areas such as Wide-bandgap semiconductor, Logic gate and Heat sink. His Gallium nitride research incorporates elements of Field-effect transistor, Diode, Heterojunction, Power electronics and Power semiconductor device. Yasuhiro Uemoto focuses mostly in the field of Nitride semiconductors, narrowing it down to topics relating to Semiconductor device and, in certain cases, Substrate and Engineering physics.
Yasuhiro Uemoto mainly focuses on Optoelectronics, Transistor, Gallium nitride, Electrical engineering and Logic gate. His Optoelectronics research incorporates themes from Ohmic contact and Current. His Transistor study is related to the wider topic of Voltage.
His research integrates issues of Diode, Breakdown voltage and Power semiconductor device in his study of Gallium nitride. His research in Power semiconductor device intersects with topics in Power electronics and Reliability. His Semiconductor research integrates issues from Nitride semiconductors, Schottky diode, Layer and Schottky barrier.
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Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Y. Uemoto;M. Hikita;H. Ueno;H. Matsuo.
IEEE Transactions on Electron Devices (2007)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)
Nitride semiconductor device
Hiroaki Ueno;Manabu Yanagihara;Tetsuzo Ueda;Yasuhiro Uemoto.
Nitride semiconductor device and method for manufacturing same
Hideyuki Okita;Yasuhiro Uemoto;Masahiro Hikita;Hidenori Takeda.
Field effect transistor and method for fabricating the same
Masahiro Hikita;Tetsuzo Ueda;Manabu Yanagihara;Yasuhiro Uemoto.
Nitride semiconductor device and method for fabricating the same
Yasuhiro Uemoto;Masahiro Hikita;Tetsuzo Ueda;Tsuyoshi Tanaka.
99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors
Tatsuo Morita;Satoshi Tamura;Yoshiharu Anda;Masahiro Ishida.
applied power electronics conference (2011)
Semiconductor device having capacitor and manufacturing method thereof
Koji Arita;Eiji Fujii;Yasuhiro Shimada;Yasuhiro Uemoto.
Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
Saichiro Kaneko;Masayuki Kuroda;Manabu Yanagihara;Ayanori Ikoshi.
international symposium on power semiconductor devices and ic's (2015)
AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno.
IEEE Transactions on Electron Devices (2005)
Profile was last updated on December 6th, 2021.
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