World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
10377
World Ranking
4205
National Ranking
1509

Materials Science

D-Index
49
Citations
11465
World Ranking
10415
National Ranking
2477

Research.com Recognitions

  • 2006 - IEEE Daniel E. Noble Award for Emerging Technologies “For fundamental contributions and commercialization in the field of Ferroelectric Random Access Memory (FeRAM).”

Overview

Carlos A. Paz de Araujo is affiliated with the University of Colorado Colorado Springs in the United States. Their research predominantly spans the fields of Engineering, Materials Science, and Computer Science. Within these fields, their subfields of study include Electrical and Electronic Engineering, Polymers and Plastics, Computer Vision and Pattern Recognition, and Applied Mathematics.

The primary topics of Carlos A. Paz de Araujo's work focus on Advanced Memory and Neural Computing, Transition Metal Oxide Nanomaterials, Semiconductor Materials and Devices, Algebraic and Geometric Analysis, Digital Image Processing Techniques, and Chaos-based Image/Signal Encryption.

The scientist has coauthored multiple papers with frequent collaborators such as Jolanta Celinska, Chris R. McWilliams, L. Shifren, Greg Yeric, and Xuefei Huang.

Publications by Carlos A. Paz de Araujo include:

  • Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs, 2022, APL Materials
  • Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs, 2022, arXiv (Cornell University)

Frequent venues for publication are APL Materials and arXiv (Cornell University).

Carlos A. Paz de Araujo has been recognized with the IEEE Daniel E. Noble Award for Emerging Technologies in 2006 for fundamental contributions and commercialization in the field of Ferroelectric Random Access Memory (FeRAM).

Best Publications

  • Ferroelectric Memories

    Unknown

  • Methods and apparatus for material deposition

    Larry D. McMillan;Carlos A. Paz de Araujo

  • Ferroelectric thin films : synthesis and basic properties

    Carlos Paz de Araujo;J. F. Scott;George W. Taylor

  • Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

    Hitoshi Watanabe;Takashi Mihara;Hiroyuki Yoshimori;Carlos A. Paz de Araujo

  • Process for fabricating ferroelectric integrated circuit

    Takashi Mihara;Hiroyuki Yoshimori;Hitoshi Watanabe;Larry D. McMillan

  • Correlated electron memory

    Carlos A. Paz de Araujo;Jolanta Celinska;Matthew D. Brubaker

  • Non-volatile resistance switching memories and methods of making same

    Matthew D. Brubaker;Carlos A. Paz de Araujo;Jolanta Celinska

  • Characteristics of Bismuth Layered SrBi2Ta2O9 Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O3

    Takashi Mihara;Hiroyuki Yoshimori;Hitoshi Watanabe;Carlos A. Paz de Araujo

  • Polarization Fatigue Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors

    Takashi Mihara;Hitoshi Watanabe;Carlos A. Paz de Araujo

  • Stabilized resistive switching memory

    Jolanta Celinska;Matthew D. Brubaker;Carlos A. Paz de Araujo

  • Characteristic Change Due to Polarization Fatigue of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors

    Takashi Mihara;Hitoshi Watanabe;Carlos A. Paz de Araujo

  • Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

    C. S. Ganpule;A. Stanishevsky;S. Aggarwal;J. Melngailis

  • Method and apparatus for fabrication of thin films by chemical vapor deposition

    Carlos A. Paz de Araujo;Larry D. McMillan;Narayan Solayappan;Jeffrey W. Bacon

  • Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

    Carlos A. Paz de Araujo;Larry D. McMillan;Narayan Solayappan;Jeffrey W. Bacon

  • Process for fabricating layered superlattice materials and making electronic devices including same

    Hitoshi Watanabe;Carlos A. Paz de Araujo;Hiroyuki Yoshimori;Michael C. Scott

  • 1T1R resistive memory array with chained structure

    Zheng Chen;Carlos A. Paz de Araujo;Larry D. McMillan

  • Memory with ferroelectric capacitor connectable to transistor gate

    Larry D. McMillan;Takashi Mihara;Hiroyuki Yoshimori;John W. Gregory

  • Method of making a variable resistance memory

    Jolanta Celinska;Carlos A. Paz de Araujo;Matthew D. Brubaker

  • Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

    Shinichiro Hayashi;Vikram Joshi;Narayan Solayappan;Joseph D. Cuchiaro

  • Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material and method for making same

    Arita Koji;Paz De Araujo Carlos A

  • FERROELECTRIC/HIGH DIELECTRIC INTEGRATED CIRCUIT AND ITS MANUFACTURE

    Uchida Hiroto;Soyama Nobuyuki;Kageyama Kensuke;Ogi Katsumi

Frequent Co-Authors

Tatsuya Shimoda
Tatsuya Shimoda Japan Advanced Institute of Science and Technology
Orlando Auciello
Orlando Auciello The University of Texas at Dallas
Ellen D. Williams
Ellen D. Williams University of Maryland, College Park
Yasuhiro Uemoto
Yasuhiro Uemoto Panasonic (Japan)

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