World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
3996
World Ranking
6356
National Ranking
2093

Best Publications

  • Advances in Silicon Carbide Processing and Applications

    Anant Agarwal;Stephen Saddow

  • Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

    Carey M. Tanner;Ya-Chuan Perng;Christopher Frewin;Stephen E. Saddow

  • Silicon carbide: a versatile material for biosensor applications

    Alexandra Oliveros;Anthony Guiseppi-Elie;Stephen E. Saddow

  • 4H–SiC photoconductive switching devices for use in high-power applications

    S. Doǧan;A. Teke;D. Huang;H. Morkoç

  • Emerging SiC Applications beyond Power Electronic Devices

    Unknown

  • Biocompatibility and wettability of crystalline SiC and Si surfaces

    C. Coletti;M.J. Jaroszeski;A. Pallaoro;A.M. Hoff

  • Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates

    R. Anzalone;A. Severino;G. D’Arrigo;C. Bongiorno

  • Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates

    M. Mynbaeva;S. E. Saddow;G. Melnychuk;I. Nikitina

  • High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor

    R.L. Myers;Y. Shishkin;O. Kordina;S.E. Saddow

  • Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

    K. J. Roe;G. Katulka;J. Kolodzey;S. E. Saddow

  • Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications

    Stephen E. Saddow;Christopher L. Frewin;Camilla Coletti;N. Schettini

  • Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates.

    C. L. Frewin;M. Jaroszeski;E. Weeber;K. E. Muffly

  • Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

    A. Severino;C. Frewin;C. Bongiorno;R. Anzalone

  • Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application

    R Anzalone;G D'Arrigo;M Camarda;C Locke

  • Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

    Rachael L. Myers-Ward;Olof Kordina;Z. Shishkin;Shailaja P. Rao

  • Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching

    S. Soubatch;Stephen E. Saddow;Shailaja P. Rao;W.Y. Lee

  • Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition

    Michael S. Mazzola;Stephen E. Saddow;Philip G. Neudeck;V. K. Lakdawala

  • A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations

    Christopher L. Frewin;Camilla Coletti;Christian Riedl;Ulrich Starke

  • A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications.

    Paola Lagonegro;Francesca Rossi;Carlo Galli;Arianna Smerieri

  • Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications

    Stephen E. Saddow;Camilla Coletti;Christopher Frewin;Norelli Castro Schettini

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