World's Best Scientists 2026 revealed!
Roger Fabian W. Pease

Roger Fabian W. Pease

D-Index & Metrics

Materials Science

D-Index
54
Citations
17822
World Ranking
8755
National Ranking
2138

Roger Fabian W. Pease publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Roger Fabian W. Pease sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 291 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Roger Fabian W. Pease D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Roger Fabian W. Pease sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1997 - Member of the National Academy of Engineering For contributions to electron-beam lithography and thermal management of integrated circuits.

Overview

Roger Fabian W. Pease is affiliated with Stanford University in the United States. Their career includes recognition through membership in the National Academy of Engineering awarded in 1997 for contributions to electron-beam lithography and the thermal management of integrated circuits.

Pease's work centers on fields related to electron-beam lithography, a key technique in microfabrication and semiconductor device manufacturing. Additionally, their research addresses the thermal management of integrated circuits, which involves controlling and dissipating heat within semiconductor devices to ensure performance and reliability.

No specific publications, co-authors, or detailed topic breakdowns beyond these contributions are currently documented.

Best Publications

  • High-performance heat sinking for VLSI

    D.B. Tuckerman;R.F.W. Pease

  • Molecular monolayers and films. A panel report for the Materials Sciences Division of the Department of Energy

    J. D. Swalen;D. L. Allara;D. L. Allara;J. D. Andrade;E. A. Chandross

  • Lithography and Other Patterning Techniques for Future Electronics

    R.F. Pease;S.Y. Chou

  • Structure in Thin and Ultrathin Spin-Cast Polymer Films

    C. W. Frank;V. Rao;M. M. Despotopoulou;R. F. W. Pease

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • Imaging and modification of polymers by scanning tunneling and atomic force microscopy

    T. R. Albrecht;M. M. Dovek;C. A. Lang;P. Grütter

  • Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like

    Roger F. Pease;David B. Tuckerman;Richard M. Swanson

  • Lithography with the scanning tunneling microscope

    M. A. McCord;R. F. W. Pease

  • Method and means for improved heat removal in compact semiconductor integrated circuits and similar devices utilizing coolant chambers and microscopic channels

    David B. Tuckerman;Roger F. W. Pease

  • Submicron patterning of thin cobalt films for magnetic storage

    R. M. H. New;R. F. W. Pease;R. L. White

  • Method and means for improved heat removal in compact semiconductor integrated circuits

    David B. Tuckerman;Roger F. W. Pease

  • High-density waveguide superlattices with low crosstalk

    Weiwei Song;Robert Gatdula;Siamak Abbaslou;Ming Lu

  • Lift‐off metallization using poly(methyl methacrylate) exposed with a scanning tunneling microscope

    M. A. McCord;R. F. W. Pease

  • CMOS transistor processing compatible with monolithic 3-D integration

    Bipin Rajendran;R. S. Shenoy;D. J. Witte;N. S. Chokshi

  • 1/8 μm optical lithography

    G. Owen;R. F. W. Pease;D. A. Markle;A. Grenville

  • Superconductors as very high-speed system-level interconnects

    O.K. Kwon;B.W. Langley;R.F.W. Pease;M.R. Beasley

  • Dielectric laser acceleration of sub-100 keV electrons with silicon dual-pillar grating structures

    Kenneth J. Leedle;Andrew Ceballos;Huiyang Deng;Olav Solgaard

  • Empirical forms for the electron/atom elastic scattering cross sections from 0.1 to 30 keV

    R. Browning;T. Z. Li;B. Chui;Jun Ye

  • Oxidation of sub-50 nm Si columns for light emission study

    Harvey I. Liu;Nadim I. Maluf;R. F. W. Pease;David K. Biegelsen

  • Physical and magnetic properties of submicron lithographically patterned magnetic islands

    R. M. H. New;R. F. W. Pease;R. L. White

Frequent Co-Authors

Zhi Liu
Zhi Liu ShanghaiTech University
Curtis W. Frank
Curtis W. Frank Stanford University
Stephen Y. Chou
Stephen Y. Chou Princeton University
W. E. Spicer
W. E. Spicer Stanford University
James S. Harris
James S. Harris Stanford University
J. F. Gibbons
J. F. Gibbons Stanford University
Fernando Ponce
Fernando Ponce Arizona State University
Theodore I. Kamins
Theodore I. Kamins Stanford University
M. R. Beasley
M. R. Beasley Stanford University
Chang-Beom Eom
Chang-Beom Eom University of Wisconsin–Madison

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