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Electronics and Electrical Engineering

D-Index
38
Citations
6184
World Ranking
4903
National Ranking
142

Overview

Bernd Tillack is primarily affiliated with Innovations for High Performance Microelectronics in Germany. Their research contributions span across multiple fields of study, with a focus on engineering and physics and astronomy. Within these broad disciplines, their work is particularly centered on subfields such as electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, materials chemistry, and condensed matter physics.

The scientific topics they have extensively covered include semiconductor quantum structures and devices, silicon nanostructures and photoluminescence, photonic and optical devices, nanowire synthesis and applications, semiconductor materials and devices, advanced surface polishing techniques, and semiconductor materials and interfaces.

Bernd Tillack has published notable papers between 2020 and 2023, reflecting ongoing research activity. Some recent examples include:

  • Bendable 190-GHz Transmitter on 20-μm Ultra-Thin SiGe BiCMOS, 2022, IEEE Journal on Flexible Electronics
  • Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice, 2021, ECS Journal of Solid State Science and Technology
  • An Advanced Finite Element Model for BiCMOS Process Oriented Ultra-Thin Wafer Deformation, 2021, IEEE Transactions on Semiconductor Manufacturing
  • Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice, 2020, ECS Transactions
  • Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots, 2023, Nanomaterials

The venues where Bernd Tillack has frequently published include ECS Meeting Abstracts, ECS Journal of Solid State Science and Technology, ECS Transactions, Japanese Journal of Applied Physics, and Frequenz. This indicates active involvement in both domain-specific conferences and journals related to microelectronics and solid-state technology.

Collaboration is evident in the frequent co-authors within their research network, which features:

  • Y. Yamamoto
  • Markus Andreas Schubert
  • Wei-Chen Wen
  • Cedric Corley-Wiciak
  • Agnieszka Anna Corley-Wiciak

These collaborations suggest engagement with researchers specializing in semiconductor devices and materials science, contributing to interdisciplinary advances across engineering and applied physics.

Best Publications

  • SiGe HBT technology with f T /f max of 300GHz/500GHz and 2.0 ps CML gate delay

    B. Heinemann;R. Barth;D. Bolze;J. Drews

  • Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices

    C. Walczyk;D. Walczyk;T. Schroeder;T. Bertaud

  • A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

    Holger Rücker;Bernd Heinemann;Wolfgang Winkler;R Barth

  • A 820GHz SiGe chipset for terahertz active imaging applications

    Erik Ojefors;Janus Grzyb;Yan Zhao;Bernd Heinemann

  • Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

    Ch. Walczyk;Ch. Wenger;R. Sohal;M. Lukosius

  • High-Performance BiCMOS Technologies without Epitaxially-Buried Subcollectors and Deep Trenches

    B. Heinemann;R. Barth;D. Knoll;H. Rucker

  • Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

    Junichi Murota;Masao Sakuraba;Bernd Tillack

  • Novel collector design for high-speed SiGe:C HBTs

    B. Heinemann;H. Rucker;R. Barth;J. Bauer

  • Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

    Giovanni Capellini;C Reich;S Guha;Y Yamamoto

  • Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

    Giovanni Capellini;G Kozlowski;Y Yamamoto;M Lisker

  • Continuously tunable delay line based on SOI tapered Bragg gratings

    Ivano Giuntoni;David Stolarek;Dimitar I Kroushkov;Jürgen Bruns

  • Phase regeneration of DPSK signals in a silicon waveguide with reverse-biased p-i-n junction.

    Francesco Da Ros;Dragana Vukovic;Andrzej Gajda;Kjeld Dalgaard

  • Highly efficient CW parametric conversion at 1550 nm in SOI waveguides by reverse biased p-i-n junction.

    Andrzej Gajda;Lars Zimmermann;Mahmoud Jazayerifar;Georg Winzer

  • SiGe BiCMOS Technology with 3.0 ps Gate Delay

    H. Riicker;B. Heinemann;R. Barth;J. Bauer

  • A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps

    H. Rucker;B. Heinemann;W. Winkler;R. Barth

  • Layers in substrate wafers

    Bernd Heinemann;Karl-Ernst Ehwald;Dieter Knoll;Bernd Tillack

  • A 0.8 THz $f_{ m MAX}$ SiGe HBT Operating at 4.3 K

    Partha S. Chakraborty;Adilson S. Cardoso;Brian R. Wier;Anup P. Omprakash

  • A D-Band Micromachined End-Fire Antenna in 130-nm SiGe BiCMOS Technology

    Wasif Tanveer Khan;A. Cagri Ulusoy;Gaetan Dufour;Mehmet Kaynak

  • SiGe:C BiCMOS technology with 3.6 ps gate delay

    H. Rucker;B. Heinemann;R. Barth;D. Bolze

  • Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

    H. Rucker;B. Heinemann;D. Bolze;D. Knoll

  • BEOL embedded RF-MEMS switch for mm-wave applications

    M. Kaynak;K. E. Ehwald;J. Drews;R. Scholz

Frequent Co-Authors

Bernd Heinemann
Bernd Heinemann Innovations for High Performance Microelectronics
Lars Zimmermann
Lars Zimmermann Technical University of Berlin
John D. Cressler
John D. Cressler Georgia Institute of Technology
Klaus Petermann
Klaus Petermann Technical University of Berlin
Giovanni Capellini
Giovanni Capellini Roma Tre University
Silke Christiansen
Silke Christiansen Fraunhofer Society
Graham T. Reed
Graham T. Reed University of Southampton
H.J. Osten
H.J. Osten University of Hannover
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics

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