World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
5438
World Ranking
4949
National Ranking
90

Yuh-Renn Wu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yuh-Renn Wu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 252 publications — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yuh-Renn Wu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yuh-Renn Wu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yuh-Renn Wu is affiliated with National Taiwan University in Taiwan and conducts research primarily in Engineering, Physics and Astronomy, and Materials Science. Their work spans multiple subfields including Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials.

The main topics of Yuh-Renn Wu's research focus on:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • Perovskite Materials and Applications
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Organic Light-Emitting Diodes Research

Their recent publications include the following papers:

  • "The 2020 UV emitter roadmap," 2020, Journal of Physics D Applied Physics
  • "Giant gauge factor of Van der Waals material based strain sensors," 2021, Nature Communications
  • "The micro-LED roadmap: status quo and prospects," 2023, Journal of Physics Photonics
  • "Study on the effect of size on InGaN red micro-LEDs," 2022, Scientific Reports
  • "Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriers," 2022, Nature Materials

Yuh-Renn Wu frequently publishes in the following venues:

  • Physical Review Applied (6 publications)
  • Journal of Applied Physics (5 publications)
  • Applied Physics Letters (5 publications)
  • arXiv (Cornell University) (5 publications)
  • Physical Review Materials (4 publications)

Frequent co-authors of Yuh-Renn Wu include:

  • James S. Speck (17 co-authored works)
  • Claude Weisbuch (12 co-authored works)
  • Jun-Yu Huang (10 co-authored works)
  • Tsung-Yin Tsai (7 co-authored works)
  • Shuji Nakamura (7 co-authored works)

Best Publications

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    Tsung-Jui Yang;Ravi Shivaraman;James S. Speck;Yuh-Renn Wu

  • Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

    Finella Lee;Liang-Yu Su;Chih-Hao Wang;Yuh-Renn Wu

  • High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    Erin C. H. Kyle;Stephen W. Kaun;Peter G. Burke;Feng Wu

  • Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

    Yuh-Renn Wu;Ravi Shivaraman;Kuang-Chung Wang;James S. Speck

  • Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

    Chi-Kang Li;Yuh-Renn Wu

  • Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

    Chi Kang Li;Marco Piccardo;Li Shuo Lu;Svitlana Mayboroda

  • Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

    Yuh-Renn Wu;Yih-Yin Lin;Hung-Hsun Huang;Jasprit Singh

  • Giant gauge factor of Van der Waals material based strain sensors

    Wenjie Yan;Huei-Ru Fuh;Huei-Ru Fuh;Yanhui Lv;Ke-Qiu Chen

  • Strain-enhanced photoluminescence from Ge direct transition

    T.-H. Cheng;K.-L. Peng;C.-Y. Ko;C.-Y. Chen

  • Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs

    Yuh-Renn Wu;Chinghua Chiu;Cheng-Yu Chang;Peichen Yu

  • Localization landscape theory of disorder in semiconductors. I. Theory and modeling

    Marcel Filoche;Marco Piccardo;Yuh Renn Wu;Chi Kang Li

  • Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

    J. R. Lang;N. G. Young;Rober M. Farrell;Yuh-Renn Wu

  • Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

    Marco Piccardo;Marco Piccardo;Chi-Kang Li;Yuh-Renn Wu;James S. Speck

  • Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process

    Huai-An Chin;I-Chun Cheng;Chih-I Huang;Yuh-Renn Wu

  • Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

    Yoshinobu Kawaguchi;Chia Yen Huang;Yuh Renn Wu;Qimin Yan

  • Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

    Ingrid L. Koslow;Matthew T. Hardy;Po Shan Hsu;Po-Yuan Dang

  • +Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures

    S. Y. Yang;Q. Zhan;P. L. Yang;M. P. Cruz

  • Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics

    Ting Gang Chen;Pei-Chen Yu;Shih Wei Chen;Feng Yu Chang

  • Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length

    Yuh-Renn Wu;M. Singh;J. Singh

Frequent Co-Authors

James S. Speck
James S. Speck University of California, Santa Barbara
Jasprit Singh
Jasprit Singh University of Michigan–Ann Arbor
Claude Weisbuch
Claude Weisbuch University of California, Santa Barbara
Peichen Yu
Peichen Yu National Yang Ming Chiao Tung University
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Tien-Chang Lu
Tien-Chang Lu National Yang Ming Chiao Tung University
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Chih-Chung Yang
Chih-Chung Yang National Taiwan University
Jiun-Haw Lee
Jiun-Haw Lee National Taiwan University

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