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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
5438
World Ranking
4949
National Ranking
90

Overview

Yuh-Renn Wu is affiliated with National Taiwan University in Taiwan and conducts research primarily in Engineering, Physics and Astronomy, and Materials Science. Their work spans multiple subfields including Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials.

The main topics of Yuh-Renn Wu's research focus on:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • Perovskite Materials and Applications
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Organic Light-Emitting Diodes Research

Their recent publications include the following papers:

  • "The 2020 UV emitter roadmap," 2020, Journal of Physics D Applied Physics
  • "Giant gauge factor of Van der Waals material based strain sensors," 2021, Nature Communications
  • "The micro-LED roadmap: status quo and prospects," 2023, Journal of Physics Photonics
  • "Study on the effect of size on InGaN red micro-LEDs," 2022, Scientific Reports
  • "Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriers," 2022, Nature Materials

Yuh-Renn Wu frequently publishes in the following venues:

  • Physical Review Applied (6 publications)
  • Journal of Applied Physics (5 publications)
  • Applied Physics Letters (5 publications)
  • arXiv (Cornell University) (5 publications)
  • Physical Review Materials (4 publications)

Frequent co-authors of Yuh-Renn Wu include:

  • James S. Speck (17 co-authored works)
  • Claude Weisbuch (12 co-authored works)
  • Jun-Yu Huang (10 co-authored works)
  • Tsung-Yin Tsai (7 co-authored works)
  • Shuji Nakamura (7 co-authored works)

Best Publications

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    Tsung-Jui Yang;Ravi Shivaraman;James S. Speck;Yuh-Renn Wu

  • Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

    Finella Lee;Liang-Yu Su;Chih-Hao Wang;Yuh-Renn Wu

  • High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    Erin C. H. Kyle;Stephen W. Kaun;Peter G. Burke;Feng Wu

  • Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

    Yuh-Renn Wu;Ravi Shivaraman;Kuang-Chung Wang;James S. Speck

  • Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

    Chi-Kang Li;Yuh-Renn Wu

  • Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

    Chi Kang Li;Marco Piccardo;Li Shuo Lu;Svitlana Mayboroda

  • Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

    Yuh-Renn Wu;Yih-Yin Lin;Hung-Hsun Huang;Jasprit Singh

  • Giant gauge factor of Van der Waals material based strain sensors

    Wenjie Yan;Huei-Ru Fuh;Huei-Ru Fuh;Yanhui Lv;Ke-Qiu Chen

  • Strain-enhanced photoluminescence from Ge direct transition

    T.-H. Cheng;K.-L. Peng;C.-Y. Ko;C.-Y. Chen

  • Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs

    Yuh-Renn Wu;Chinghua Chiu;Cheng-Yu Chang;Peichen Yu

  • Localization landscape theory of disorder in semiconductors. I. Theory and modeling

    Marcel Filoche;Marco Piccardo;Yuh Renn Wu;Chi Kang Li

  • Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

    J. R. Lang;N. G. Young;Rober M. Farrell;Yuh-Renn Wu

  • Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

    Marco Piccardo;Marco Piccardo;Chi-Kang Li;Yuh-Renn Wu;James S. Speck

  • Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process

    Huai-An Chin;I-Chun Cheng;Chih-I Huang;Yuh-Renn Wu

  • Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

    Yoshinobu Kawaguchi;Chia Yen Huang;Yuh Renn Wu;Qimin Yan

  • Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

    Ingrid L. Koslow;Matthew T. Hardy;Po Shan Hsu;Po-Yuan Dang

  • +Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures

    S. Y. Yang;Q. Zhan;P. L. Yang;M. P. Cruz

  • Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics

    Ting Gang Chen;Pei-Chen Yu;Shih Wei Chen;Feng Yu Chang

  • Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length

    Yuh-Renn Wu;M. Singh;J. Singh

Frequent Co-Authors

James S. Speck
James S. Speck University of California, Santa Barbara
Jasprit Singh
Jasprit Singh University of Michigan–Ann Arbor
Claude Weisbuch
Claude Weisbuch University of California, Santa Barbara
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Tien-Chang Lu
Tien-Chang Lu National Yang Ming Chiao Tung University
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Jiun-Haw Lee
Jiun-Haw Lee National Taiwan University
Jinn-Kong Sheu
Jinn-Kong Sheu National Cheng Kung University
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University

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