World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
54
Citations
13387
World Ranking
8801
National Ranking
2531

Shu-Shen Li publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shu-Shen Li sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 263 publications — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shu-Shen Li D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shu-Shen Li sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Shu-Shen Li is affiliated with the Chinese Academy of Sciences in China and has contributed extensively to fields intersecting physics, materials science, and engineering. Their scholarly work spans critical areas such as quantum and electron transport phenomena, semiconductor materials and devices, and topological materials and phenomena. The scientist's research also covers electronic and structural properties of oxides, semiconductor quantum structures and devices, advancements in semiconductor devices and circuit design, and physics of superconductivity and magnetism.

Li's publication record includes significant papers in renowned journals. Selected recent works include:

  • "Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions," 2021, Advanced Materials
  • "Image charge interaction correction in charged-defect calculations," 2020, Physical review. B./Physical review. B
  • "Realistic dimension-independent approach for charged-defect calculations in semiconductors," 2020, Physical review. B./Physical review. B
  • "The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability," 2022, Science Advances
  • "Anharmonic multi-phonon nonradiative transition: An ab initio calculation approach," 2020, Science China Physics Mechanics and Astronomy

Frequent publication venues illustrate areas of focus and dissemination channels for Li's research:

  • Physical review. B./Physical review. B (17 publications)
  • arXiv (Cornell University) (9 publications)
  • Nature Communications (3 publications)
  • Science China Physics Mechanics and Astronomy (2 publications)
  • Advanced Functional Materials (2 publications)

Their body of work frequently involves collaboration with several co-authors, including:

  • Jun-Wei Luo (29 joint publications)
  • Lin-Wang Wang (14 joint publications)
  • Su-Huai Wei (7 joint publications)
  • Wenhao Liu (6 joint publications)
  • Hui-Xiong Deng (6 joint publications)

Li's subfields of study reflect a broad and interdisciplinary approach:

  • Atomic and Molecular Physics, and Optics (41 publications)
  • Materials Chemistry (28 publications)
  • Electrical and Electronic Engineering (28 publications)
  • Condensed Matter Physics (11 publications)
  • Electronic, Optical and Magnetic Materials (7 publications)

The scientist's research embraces a layered understanding of the materials and phenomena underpinning modern semiconductor technology and condensed matter physics, emphasizing both theoretical and computational approaches. Their publications reflect ongoing engagement with advanced topics within physics and materials science, contributing to the scientific discourse on electronic transport, defect physics, and material properties at the atomic and molecular scale.

Best Publications

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Design of narrow-gap TiO2: a passivated codoping approach for enhanced photoelectrochemical activity.

    Yanqin Gai;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes

    Nengjie Huo;Shengxue Yang;Zhongming Wei;Shu-Shen Li

  • Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

    Nengjie Huo;Jun Kang;Zhongming Wei;Shu-Shen Li

  • Elastic, Electronic, and Optical Properties of Two-Dimensional Graphyne Sheet

    Jun Kang;Jingbo Li;Jingbo Li;Fengmin Wu;Shu-Shen Li

  • Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

    Haowei Peng;H. J. Xiang;Su-Huai Wei;Shu-Shen Li

  • Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering.

    Shengxue Yang;Cong Wang;Hasan Sahin;Hui Chen

  • Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures.

    Jun Kang;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Thermal entanglement in a two-qubit Heisenberg XXZ spin chain under an inhomogeneous magnetic field

    Guo-Feng Zhang;Shu-Shen Li;Shu-Shen Li

  • Design of shallow acceptors in ZnO: First-principles band-structure calculations

    Jingbo Li;Su-Huai Wei;Shu-Shen Li;Jian-Bai Xia

  • High performance few-layer GaS photodetector and its unique photo-response in different gas environments

    Shengxue Yang;Yan Li;Xiaozhou Wang;Nengjie Huo

  • High Capacity Hydrogen Storage in Ca Decorated Graphyne: A First-Principles Study

    Chong Li;Jingbo Li;Jingbo Li;Fengmin Wu;Shu-Shen Li

  • Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy

    Yabin Chen;Chaoyu Chen;Robert Kealhofer;Huili Liu;Huili Liu

  • Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure.

    Le Huang;Nengjie Huo;Yan Li;Hui Chen

  • Effective-mass theory for InAs/GaAs strained coupled quantum dots

    Shushen Li;Shushen Li;Jianbai Xia;Jianbai Xia;Zhiliang Yuan;Zhiliang Yuan;Zhongying Xu;Zhongying Xu

  • InAs/GaAs single-electron quantum dot qubit

    Shu-Shen Li;Jian-Bai Xia;Jin-Long Liu;Fu-Hua Yang

  • Binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot : Quantum confinement and Stark effects

    Unknown

  • Possible origin of ferromagnetism in undoped anatase TiO2

    Haowei Peng;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Native p-type transparent conductive CuI via intrinsic defects

    Jing Wang;Jingbo Li;Shu-Shen Li

  • In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

    Zhi-Qiang Fan;Zhi-Qiang Fan;Xiang-Wei Jiang;Jun-Wei Luo;Li-Ying Jiao

  • Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets

    Yun Huang;Hui-Xiong Deng;Kai Xu;Zhen-Xing Wang

  • Tunable Polarity Behavior and Self‐Driven Photoswitching in p‐WSe2/n‐WS2 Heterojunctions

    Nengjie Huo;Juehan Yang;Le Huang;Zhongming Wei

Frequent Co-Authors

Jingbo Li
Jingbo Li South China Normal University
Lin-Wang Wang
Lin-Wang Wang Lawrence Berkeley National Laboratory
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Hui-Xiong Deng
Hui-Xiong Deng Chinese Academy of Sciences
Zhongming Wei
Zhongming Wei Chinese Academy of Sciences
Xiuwen Zhang
Xiuwen Zhang University of Colorado Boulder
Junqiao Wu
Junqiao Wu University of California, Berkeley
Alex Zunger
Alex Zunger University of Colorado Boulder
Ru Huang
Ru Huang Peking University
Zhenxing Wang
Zhenxing Wang National Center for Nanoscience and Technology, China

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