World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
54
Citations
13387
World Ranking
8803
National Ranking
2530

Overview

Shu-Shen Li is affiliated with the Chinese Academy of Sciences in China and has contributed extensively to fields intersecting physics, materials science, and engineering. Their scholarly work spans critical areas such as quantum and electron transport phenomena, semiconductor materials and devices, and topological materials and phenomena. The scientist's research also covers electronic and structural properties of oxides, semiconductor quantum structures and devices, advancements in semiconductor devices and circuit design, and physics of superconductivity and magnetism.

Li's publication record includes significant papers in renowned journals. Selected recent works include:

  • "Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions," 2021, Advanced Materials
  • "Image charge interaction correction in charged-defect calculations," 2020, Physical review. B./Physical review. B
  • "Realistic dimension-independent approach for charged-defect calculations in semiconductors," 2020, Physical review. B./Physical review. B
  • "The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability," 2022, Science Advances
  • "Anharmonic multi-phonon nonradiative transition: An ab initio calculation approach," 2020, Science China Physics Mechanics and Astronomy

Frequent publication venues illustrate areas of focus and dissemination channels for Li's research:

  • Physical review. B./Physical review. B (17 publications)
  • arXiv (Cornell University) (9 publications)
  • Nature Communications (3 publications)
  • Science China Physics Mechanics and Astronomy (2 publications)
  • Advanced Functional Materials (2 publications)

Their body of work frequently involves collaboration with several co-authors, including:

  • Jun-Wei Luo (29 joint publications)
  • Lin-Wang Wang (14 joint publications)
  • Su-Huai Wei (7 joint publications)
  • Wenhao Liu (6 joint publications)
  • Hui-Xiong Deng (6 joint publications)

Li's subfields of study reflect a broad and interdisciplinary approach:

  • Atomic and Molecular Physics, and Optics (41 publications)
  • Materials Chemistry (28 publications)
  • Electrical and Electronic Engineering (28 publications)
  • Condensed Matter Physics (11 publications)
  • Electronic, Optical and Magnetic Materials (7 publications)

The scientist's research embraces a layered understanding of the materials and phenomena underpinning modern semiconductor technology and condensed matter physics, emphasizing both theoretical and computational approaches. Their publications reflect ongoing engagement with advanced topics within physics and materials science, contributing to the scientific discourse on electronic transport, defect physics, and material properties at the atomic and molecular scale.

Best Publications

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Design of narrow-gap TiO2: a passivated codoping approach for enhanced photoelectrochemical activity.

    Yanqin Gai;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes

    Nengjie Huo;Shengxue Yang;Zhongming Wei;Shu-Shen Li

  • Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors

    Nengjie Huo;Jun Kang;Zhongming Wei;Shu-Shen Li

  • Elastic, Electronic, and Optical Properties of Two-Dimensional Graphyne Sheet

    Jun Kang;Jingbo Li;Jingbo Li;Fengmin Wu;Shu-Shen Li

  • Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

    Haowei Peng;H. J. Xiang;Su-Huai Wei;Shu-Shen Li

  • Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering.

    Shengxue Yang;Cong Wang;Hasan Sahin;Hui Chen

  • Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures.

    Jun Kang;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Thermal entanglement in a two-qubit Heisenberg XXZ spin chain under an inhomogeneous magnetic field

    Guo-Feng Zhang;Shu-Shen Li;Shu-Shen Li

  • Design of shallow acceptors in ZnO: First-principles band-structure calculations

    Jingbo Li;Su-Huai Wei;Shu-Shen Li;Jian-Bai Xia

  • High performance few-layer GaS photodetector and its unique photo-response in different gas environments

    Shengxue Yang;Yan Li;Xiaozhou Wang;Nengjie Huo

  • High Capacity Hydrogen Storage in Ca Decorated Graphyne: A First-Principles Study

    Chong Li;Jingbo Li;Jingbo Li;Fengmin Wu;Shu-Shen Li

  • Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy

    Yabin Chen;Chaoyu Chen;Robert Kealhofer;Huili Liu;Huili Liu

  • Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure.

    Le Huang;Nengjie Huo;Yan Li;Hui Chen

  • Effective-mass theory for InAs/GaAs strained coupled quantum dots

    Shushen Li;Shushen Li;Jianbai Xia;Jianbai Xia;Zhiliang Yuan;Zhiliang Yuan;Zhongying Xu;Zhongying Xu

  • InAs/GaAs single-electron quantum dot qubit

    Shu-Shen Li;Jian-Bai Xia;Jin-Long Liu;Fu-Hua Yang

  • Binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot : Quantum confinement and Stark effects

    Unknown

  • Possible origin of ferromagnetism in undoped anatase TiO2

    Haowei Peng;Jingbo Li;Shu-Shen Li;Jian-Bai Xia

  • Native p-type transparent conductive CuI via intrinsic defects

    Jing Wang;Jingbo Li;Shu-Shen Li

  • In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

    Zhi-Qiang Fan;Zhi-Qiang Fan;Xiang-Wei Jiang;Jun-Wei Luo;Li-Ying Jiao

  • Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets

    Yun Huang;Hui-Xiong Deng;Kai Xu;Zhen-Xing Wang

  • Tunable Polarity Behavior and Self‐Driven Photoswitching in p‐WSe2/n‐WS2 Heterojunctions

    Nengjie Huo;Juehan Yang;Le Huang;Zhongming Wei

Frequent Co-Authors

Jingbo Li
Jingbo Li South China Normal University
Lin-Wang Wang
Lin-Wang Wang Lawrence Berkeley National Laboratory
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Hui-Xiong Deng
Hui-Xiong Deng Chinese Academy of Sciences
Zhongming Wei
Zhongming Wei Chinese Academy of Sciences
Xiuwen Zhang
Xiuwen Zhang University of Colorado Boulder
Junqiao Wu
Junqiao Wu University of California, Berkeley
Alex Zunger
Alex Zunger University of Colorado Boulder
Ru Huang
Ru Huang Peking University
Zhenxing Wang
Zhenxing Wang National Center for Nanoscience and Technology, China

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