World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
52
Citations
11959
World Ranking
9463
National Ranking
416

Yong-Hyun Kim publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yong-Hyun Kim sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 226 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yong-Hyun Kim D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yong-Hyun Kim sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yong-Hyun Kim is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research primarily spans the fields of Engineering and Materials Science, with a particular focus on Materials Chemistry and Electrical and Electronic Engineering.

Their scholarly work covers several specialized subfields, including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Polymers and Plastics
  • Biomedical Engineering

Key research topics explored by Yong-Hyun Kim include:

  • Quantum Dots Synthesis And Properties
  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Molecular Junctions and Nanostructures
  • Semiconductor Materials and Devices
  • Topological Materials and Phenomena
  • Graphene Research and Applications

Their recent publications demonstrate a range of investigations in materials and nanostructures, illustrating engagement with cutting-edge scientific problems. Notable papers include:

  • "N2-dopant of graphene with electrochemically switchable bifunctional ORR/OER catalysis for Zn-air battery" (2020), published in Energy storage materials
  • "Origin of the Stability and Transition from Anionic to Cationic Surface Ligand Passivation of All-Inorganic Cesium Lead Halide Perovskite Nanocrystals" (2020), published in The Journal of Physical Chemistry Letters
  • "Derivation of a governing rule in triboelectric charging and series from thermoelectricity" (2022), published in Physical Review Research
  • "Tailored growth of single-crystalline InP tetrapods" (2021), published in Nature Communications
  • "Ni Nanoparticles on Ni Core/N-Doped Carbon Shell Heterostructures for Electrocatalytic Oxygen Evolution" (2021), published in ACS Applied Nano Materials

Yong-Hyun Kim has collaborated frequently with several coauthors, which include:

  • Sohee Jeong
  • Yeunhee Lee
  • Eui-Cheol Shin
  • Jaegwan Jung
  • Ho-Hyun Nahm

Their work has been published repeatedly in notable venues such as:

  • Nature Communications
  • Physical Review B
  • Coatings
  • Small
  • arXiv (Cornell University)

Best Publications

  • Hydrogen storage in novel organometallic buckyballs.

    Yufeng Zhao;Yong-Hyun Kim;A. C. Dillon;M. J. Heben

  • Suppression of Hydrogen Evolution Reaction in Electrochemical N2 Reduction Using Single-Atom Catalysts: A Computational Guideline

    Changhyeok Choi;Seoin Back;Na Young Kim;Juhyung Lim

  • Single-atom catalysts for CO2 electroreduction with significant activity and selectivity improvements

    Seoin Back;Juhyung Lim;Na Young Kim;Yong-Hyun Kim

  • Chemical structures of hydrazine-treated graphene oxide and generation of aromatic nitrogen doping

    Sungjin Park;Yichen C. Hu;Jin Ok Hwang;Eui-Sup Lee

  • Steric-Hindrance-Driven Shape Transition in PbS Quantum Dots: Understanding Size-Dependent Stability

    Hyekyoung Choi;Jae-Hyeon Ko;Yong-Hyun Kim;Sohee Jeong

  • Reversible Lithium-Ion Insertion in Molybdenum Oxide Nanoparticles

    Se-Hee Lee;Yong-Hyun Kim;Rohit Deshpande;Philip A. Parilla

  • Transparent Conductive Single-Walled Carbon Nanotube Networks with Precisely Tunable Ratios of Semiconducting and Metallic Nanotubes

    Jeffrey L. Blackburn;Teresa M. Barnes;Matthew C. Beard;Yong-Hyun Kim

  • Theory, synthesis, and oxygen reduction catalysis of Fe-porphyrin-like carbon nanotube.

    Duck Hyun Lee;Won Jun Lee;Won Jong Lee;Sang Ouk Kim

  • Nondissociative Adsorption of H 2 Molecules in Light-Element-Doped Fullerenes

    Yong-Hyun Kim;Yufeng Zhao;Andrew Williamson;Michael J. Heben

  • Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    Azure D. Avery;Ben H. Zhou;Jounghee Lee;Eui Sup Lee

  • Workfunction-Tunable, N-Doped Reduced Graphene Transparent Electrodes for High-Performance Polymer Light-Emitting Diodes

    Jin Ok Hwang;Ji Sun Park;Dong Sung Choi;Ju Young Kim

  • Enhanced nanoscale friction on fluorinated graphene.

    Sangku Kwon;Jae-Hyeon Ko;Ki-Joon Jeon;Yong-Hyun Kim

  • Effects of sulfur doping on graphene-based nanosheets for use as anode materials in lithium-ion batteries

    Young Soo Yun;Young Soo Yun;Viet-Duc Le;Haegyeom Kim;Sung-Jin Chang

  • Ultrastable PbSe nanocrystal quantum dots via in situ formation of atomically thin halide adlayers on PbSe(100).

    Ju Young Woo;Jae-Hyeon Ko;Jung Hoon Song;Kyungnam Kim

  • Electronic structure of radially deformed BN and BC 3 nanotubes

    Yong-Hyun Kim;K. J. Chang;S. G. Louie;S. G. Louie

  • Defective fullerenes and nanotubes as molecular magnets: An ab initio study

    Yong Hyun Kim;Jin Choi;K. J. Chang;David Tománek

  • Solid State Enabled Reversible Four Electron Storage

    Thomas A. Yersak;H. Alex Macpherson;Seul Cham Kim;Viet-Duc Le

  • Band-gap modification by radial deformation in carbon nanotubes

    Chan-Jeong Park;Yong-Hyun Kim;K. J. Chang

  • Ambient Carbon Dioxide Capture by Boron-Rich Boron Nitride Nanotube

    Heechol Choi;Young Choon Park;Yong-Hyun Kim;Yoon Sup Lee

  • Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients

    Kanghyun Chu;Byung-Kweon Jang;Ji Ho Sung;Yoon Ah Shin

Frequent Co-Authors

Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Michael J. Heben
Michael J. Heben University of Toledo
Yufeng Zhao
Yufeng Zhao Shanghai University
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Kee-Joo Chang
Kee-Joo Chang Korea Advanced Institute of Science and Technology
Sang Ouk Kim
Sang Ouk Kim Korea Advanced Institute of Science and Technology
Sohee Jeong
Sohee Jeong Sungkyunkwan University
Yi-Yang Sun
Yi-Yang Sun Chinese Academy of Sciences
Jeong Young Park
Jeong Young Park Korea Advanced Institute of Science and Technology
Sungjin Park
Sungjin Park Inha University

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