World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
96
Citations
36787
World Ranking
1260
National Ranking
396

Physics

D-Index
90
Citations
33103
World Ranking
2221
National Ranking
40

Wenhui Duan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wenhui Duan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 472 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Wenhui Duan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wenhui Duan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 96 D-Index — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For discoveries of novel physical phenomena in twodimensional electronics and advanced functional materials using computational and theoretical approaches, and for the firstprinciples prediction of new quantum materials

Overview

Wenhui Duan is affiliated with Tsinghua University in China and has made contributions primarily in the fields of Materials Science and Physics and Astronomy. Their research spans several specialized subfields, including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

The scientific topics that Duan has focused on include:

  • 2D Materials and Applications
  • Topological Materials and Phenomena
  • Graphene Research and Applications
  • Machine Learning in Materials Science
  • Quantum and Electron Transport Phenomena
  • Electronic and Structural Properties of Oxides
  • Advancements in Battery Materials

Their recent publications reflect this diverse scope, featuring papers such as:

  • "Deep-learning density functional theory Hamiltonian for efficient ab initio electronic-structure calculation" (2022), published in Nature Computational Science
  • "Pseudospin-selective Floquet band engineering in black phosphorus" (2023), published in Nature
  • "Single atomic cobalt catalyst significantly accelerates lithium ion diffusion in high mass loading Li2S cathode" (2020), published in Energy Storage Materials
  • "Tailored Ising superconductivity in intercalated bulk NbSe2" (2022), published in Nature Physics
  • "Experimental Evidence of Chiral Symmetry Breaking in Kekulé-Ordered Graphene" (2021), published in Physical Review Letters

Wenhui Duan frequently collaborates with other researchers, including Yong Xu, Nianlong Zou, Shuyun Zhou, Changhua Bao, and He Li. These collaborations have contributed to advancing knowledge in their main fields of study.

Publication venues where Duan's work appears often include:

  • arXiv (Cornell University)
  • Physical Review B
  • Nano Letters
  • Physical Review Letters
  • Zenodo (CERN European Organization for Nuclear Research)

In recognition of contributions to physics, Duan was named a Fellow of the American Physical Society in 2019. The citation highlighted discoveries of novel physical phenomena in two-dimensional electronics and advanced functional materials using computational and theoretical approaches, as well as first-principles predictions of new quantum materials.

Best Publications

  • Graphene oxide as a sulfur immobilizer in high performance lithium/sulfur cells

    Yuegang Zhang;Elton J. Cairns;Liwen Ji;Mumin Rao

  • Topological crystalline insulators in the SnTe material class

    Timothy H. Hsieh;Hsin Lin;Junwei Liu;Junwei Liu;Wenhui Duan

  • Large-gap Quantum Spin Hall Insulators in Tin Films

    Yong Xu;Binghai Yan;Hai-Jun Zhang;Jing Wang

  • Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

    Kai Chang;Junwei Liu;Junwei Liu;Haicheng Lin;Na Wang

  • Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

    Ke Deng;Guoliang Wan;Peng Deng;Kenan Zhang

  • High-Rate, Ultralong Cycle-Life Lithium/Sulfur Batteries Enabled by Nitrogen-Doped Graphene

    Yongcai Qiu;Wanfei Li;Wen Zhao;Guizhu Li

  • Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping

    Qimin Yan;Bing Huang;Jie Yu;Fawei Zheng

  • Experimental Realization of an Intrinsic Magnetic Topological Insulator

    Yan Gong;Jingwen Guo;Jiaheng Li;Kejing Zhu

  • Adsorption of Gas Molecules on Graphene Nanoribbons and Its Implication for Nanoscale Molecule Sensor

    Bing Huang;Zuanyi Li;Zhirong Liu;Gang Zhou

  • Intrinsic magnetic topological insulators in van der Waals layered MnBi$_2$Te$_4$-family materials

    Jiaheng Li;Yang Li;Shiqiao Du;Zun Wang

  • Role of Symmetry in the Transport Properties of Graphene Nanoribbons under Bias

    Zuanyi Li;Haiyun Qian;Jian Wu;Bing-Lin Gu

  • Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe 2

    Mingzhe Yan;Huaqing Huang;Kenan Zhang;Eryin Wang

  • Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials

    Jiaheng Li;Yang Li;Shiqiao Du;Zun Wang

  • Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study.

    Zheng Liu;Chao Xing Liu;Yong Shi Wu;Yong Shi Wu;Wen Hui Duan

  • Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator

    Junwei Liu;Junwei Liu;Timothy H. Hsieh;Peng Wei;Wenhui Duan

  • Epitaxial growth of ultraflat stanene with topological band inversion.

    Jialiang Deng;Bingyu Xia;Xiaochuan Ma;Haoqi Chen

  • Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$

    Mingzhe Yan;Huaqing Huang;Kenan Zhang;Eryin Wang

  • Probing superexchange interaction in molecular magnets by spin-flip spectroscopy and microscopy.

    Xi Chen;Ying-Shuang Fu;Ying-Shuang Fu;Shuai-Hua Ji;Shuai-Hua Ji;Tong Zhang;Tong Zhang

  • Type-II Dirac fermions in the PtSe 2 class of transition metal dichalcogenides

    Huaqing Huang;Shuyun Zhou;Wenhui Duan

  • Experimental evidence for type-II Dirac semimetal in PtSe 2

    Kenan Zhang;Mingzhe Yan;Haoxiong Zhang;Huaqing Huang

  • Adsorption of gas molecules on graphene nanoribbons and its implication for nano-scale molecule sensor

    Bing Huang;Zuanyi Li;Zhirong Liu;Gang Zhou

Frequent Co-Authors

Bing-Lin Gu
Bing-Lin Gu Tsinghua University
Jian Wu
Jian Wu Tsinghua University
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Zhirong Liu
Zhirong Liu Peking University
Shuyun Zhou
Shuyun Zhou Tsinghua University
Xucun Ma
Xucun Ma Tsinghua University
Ke He
Ke He Tsinghua University
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Xiaolong Zou
Xiaolong Zou Tsinghua University
Shou-Cheng Zhang
Shou-Cheng Zhang Stanford University

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