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Materials Science

D-Index
42
Citations
13228
World Ranking
12456
National Ranking
3391

Overview

Shuyun Zhou is affiliated with Tsinghua University in China and has made significant contributions primarily in the fields of Materials Science and Physics and Astronomy. Their research output includes 91 publications in Materials Science and 54 in Physics and Astronomy, focusing on both broad and specialized topics.

The main areas of research that define Zhou's work include:

  • 2D Materials and Applications
  • Graphene research and applications
  • Topological Materials and Phenomena
  • Electronic and Structural Properties of Oxides
  • Quantum and electron transport phenomena
  • Advanced Condensed Matter Physics
  • Perovskite Materials and Applications

They have published frequently in several scientific journals and platforms, notably:

  • arXiv (Cornell University)
  • Physical Review B
  • Nature Communications
  • 2D Materials
  • Physical Review Letters

Significant recent papers include:

  • "Light-induced emergent phenomena in 2D materials and topological materials" (2021) in Nature Reviews Physics
  • "Pseudospin-selective Floquet band engineering in black phosphorus" (2023) in Nature
  • "Tailored Ising superconductivity in intercalated bulk NbSe2" (2022) in Nature Physics
  • "Experimental Evidence of Chiral Symmetry Breaking in Kekulé-Ordered Graphene" (2021) in Physical Review Letters
  • "Angle-resolved photoemission spectroscopy" (2022) in Nature Reviews Methods Primers

Collaborations feature contributions alongside several frequent coauthors, including:

  • Changhua Bao
  • Hong-Yun Zhang
  • Pu Yu
  • Haoyuan Zhong
  • Wenhui Duan

Their subfields of specialization reflect the interdisciplinary nature of their research:

  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Best Publications

  • Substrate-induced bandgap opening in epitaxial graphene

    S. Y. Zhou;G.-H. Gweon;G.-H. Gweon;A. V. Fedorov;P. N. First

  • Substrate-induced band gap opening in epitaxial graphene

    S. Y. Zhou;G. H. Gweon;A. V. Fedorov;P. N. First

  • Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

    Ke Deng;Guoliang Wan;Peng Deng;Kenan Zhang

  • Electric-field control of tri-state phase transformation with a selective dual-ion switch

    Nianpeng Lu;Pengfei Zhang;Qinghua Zhang;Ruimin Qiao

  • Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

    Yeliang Wang;Linfei Li;Wei Yao;Shiru Song

  • First direct observation of Dirac fermions in graphite

    S. Y. Zhou;S. Y. Zhou;G.-H. Gweon;J. Graf;A. V. Fedorov

  • Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate

    E. Rollings;G.-H. Gweon;S.Y. Zhou;B.S. Mun

  • Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

    Hua Yu;Mengzhou Liao;Wenjuan Zhao;Guodong Liu

  • Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe 2

    Mingzhe Yan;Huaqing Huang;Kenan Zhang;Eryin Wang

  • Metal to insulator transition in epitaxial graphene induced by molecular doping.

    S. Y. Zhou;S. Y. Zhou;D. A. Siegel;D. A. Siegel;A. V. Fedorov;A. Lanzara;A. Lanzara

  • Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$

    Mingzhe Yan;Huaqing Huang;Kenan Zhang;Eryin Wang

  • Type-II Dirac fermions in the PtSe 2 class of transition metal dichalcogenides

    Huaqing Huang;Shuyun Zhou;Wenhui Duan

  • Experimental evidence for type-II Dirac semimetal in PtSe 2

    Kenan Zhang;Mingzhe Yan;Haoxiong Zhang;Huaqing Huang

  • Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene

    Hyunyong Choi;Ferenc Borondics;David A. Siegel;David A. Siegel;Shuyun Y. Zhou;Shuyun Y. Zhou

  • Origin of the energy bandgap in epitaxial graphene

    S.Y. Zhou;S.Y. Zhou;D.A. Siegel;D.A. Siegel;A.V. Fedorov;F.El Gabaly

  • Light-induced emergent phenomena in 2D materials and topological materials

    Changhua Bao;Peizhe Tang;Peizhe Tang;Dong Sun;Shuyun Zhou

  • Quasicrystalline 30° twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling.

    Wei Yao;Eryin Wang;Changhua Bao;Yiou Zhang

  • Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride

    Eryin Wang;Xiaobo Lu;Shijie Ding;Wei Yao

  • Anisotropic Broadband Photoresponse of Layered Type-II Weyl Semimetal MoTe2.

    Jiawei Lai;Xin Liu;Junchao Ma;Qinsheng Wang;Qinsheng Wang

  • Fully gapped topological surface states in Bi2Se3 films induced by ad-wave high-temperature superconductor

    Eryin Wang;Eryin Wang;Hao Ding;Alexei V. Fedorov;Wei Yao

  • Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe 2 film.

    Wei Yao;Eryin Wang;Huaqing Huang;Ke Deng

  • Origin of the energy bandgap in epitaxial graphene

    S.Y. Zhou;D.A. Siegel;A.V. Fedorov;F. El Gabaly

  • Pseudospin-selective Floquet band engineering in black phosphorus

    Unknown

  • High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Mingzhe Yan;Eryin Wang;Xue Zhou;Guangqi Zhang

  • Raman signatures of inversion symmetry breaking and structural phase transition in type-II Weyl semimetal MoTe 2

    Kenan Zhang;Changhua Bao;Qiangqiang Gu;Xiao Ren

  • High quality atomically thin PtSe 2 films grown by molecular beam epitaxy

    Mingzhe Yan;Eryin Wang;Xue Zhou;Guangqi Zhang

  • Tailored Ising superconductivity in intercalated bulk NbSe2

    Unknown

  • Disorder-induced multifractal superconductivity in monolayer niobium dichalcogenides

    Kun Zhao;Haicheng Lin;Xiao Xiao;Wantong Huang

Frequent Co-Authors

Alessandra Lanzara
Alessandra Lanzara University of California, Berkeley
Yang Wu
Yang Wu Tsinghua University
Wenhui Duan
Wenhui Duan Tsinghua University
Alexei V. Fedorov
Alexei V. Fedorov Lawrence Berkeley National Laboratory
Pu Yu
Pu Yu Tsinghua University
David Siegel
David Siegel University of California, Santa Barbara
Hiroshi Eisaki
Hiroshi Eisaki National Institute of Advanced Industrial Science and Technology
Guangyu Zhang
Guangyu Zhang Chinese Academy of Sciences
David A. Siegel
David A. Siegel University of California, Santa Barbara
Eli Rotenberg
Eli Rotenberg Lawrence Berkeley National Laboratory

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