The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Alexei V. Fedorov sits on this spectrum.
This scientist: 276 publications — 13th percentile
13% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,469 publications or more.
The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Alexei V. Fedorov sits on this spectrum.
This scientist: 71 D-Index — 2nd percentile
2% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 185 D-Index or more.
Alexei V. Fedorov is affiliated with the Lawrence Berkeley National Laboratory in the United States. Their research primarily focuses on the fields of Physics and Astronomy as well as Materials Science, with significant contributions to several subfields including Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Electrical and Electronic Engineering.
The main research topics covered by Alexei V. Fedorov encompass a variety of advanced areas, including:
The scientist has published extensively, with notable papers including:
Frequent collaborators in their research include Makoto Hashimoto, Dong-Hui Lu, C. J. Palmstrøm, Hadass S. Inbar, and Aaron N. Engel. These partnerships have contributed to their body of work, which is published in a diverse range of scientific venues.
The publication venues where Alexei V. Fedorov's research is frequently found include:
Their research outputs emphasize condensed matter physics and materials science, with particular attention to experimental and theoretical investigations of novel electronic, magnetic, and structural properties in complex materials. The breadth of their work also reflects contemporary developments in 2D materials and topological phenomena, underlying emerging applications in quantum and electronic devices.
S. Y. Zhou;G.-H. Gweon;G.-H. Gweon;A. V. Fedorov;P. N. First
S. Y. Zhou;G. H. Gweon;A. V. Fedorov;P. N. First
D. Hsieh;Y. Xia;D. Qian;L. Wray
Qiang Li;Dmitri E. Kharzeev;Dmitri E. Kharzeev;Cheng Zhang;Yuan Huang
D. Hsieh;Y. Xia;D. Qian;L. Wray
Ke Deng;Guoliang Wan;Peng Deng;Kenan Zhang
T. Valla;A. V. Fedorov;P. D. Johnson;B. O. Wells
L. Andrew Wray;L. Andrew Wray;Su Yang Xu;Yuqi Xia;David Hsieh
S. Y. Zhou;S. Y. Zhou;G.-H. Gweon;J. Graf;A. V. Fedorov
E. Rollings;G.-H. Gweon;S.Y. Zhou;B.S. Mun
L. Andrew Wray;L. Andrew Wray;Su Yang Xu;Yuqi Xia;Yew San Hor
L. Andrew Wray;Su-Yang Xu;Yuqi Xia;David Hsieh
P. D. Johnson;T. Valla;A. V. Fedorov;Z. Yusof
T. Valla;A. V. Fedorov;P. D. Johnson;S. L. Hulbert
S. Y. Zhou;S. Y. Zhou;D. A. Siegel;D. A. Siegel;A. V. Fedorov;A. Lanzara;A. Lanzara
Fang Yang;Lin Miao;Z. F. Wang;Meng Yu Yao
T. Valla;A. V. Fedorov;Jinho Lee;J. C. Davis
I. Pletikosić;Mazhar N. Ali;A. V. Fedorov;Robert Joseph Cava
M. Z. Hasan;M. Z. Hasan;Y.-D. Chuang;Y.-D. Chuang;D. Qian;Y. W. Li
Chang Liu;G. D. Samolyuk;Y. Lee;Ni Ni
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