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D-Index & Metrics

Materials Science

D-Index
67
Citations
16478
World Ranking
5102
National Ranking
1339

Tai-Chang Chiang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tai-Chang Chiang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 447 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tai-Chang Chiang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tai-Chang Chiang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1986 - Fellow of American Physical Society (APS) Citation For his numerous contributions to the understanding of bulk, surface and interface states of metals and semiconductors using photoemission techniques

Overview

Tai-Chang Chiang is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research focuses extensively on the fields of Materials Science and Physics and Astronomy, with significant contributions to subfields such as Materials Chemistry, Atomic and Molecular Physics, and Optics. Their specialization also extends to Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Electrical and Electronic Engineering.

Their primary topics of study include:

  • Topological Materials and Phenomena
  • Graphene research and applications
  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Organic and Molecular Conductors Research
  • Advanced Condensed Matter Physics
  • Physics of Superconductivity and Magnetism

Tai-Chang Chiang has co-authored numerous papers with frequent collaborators including Meng-Kai Lin, Joseph A. Hlevyack, Guang Bian, Sung-Kwan Mo, and Peter Abbamonte. Their work appears in a range of scientific journals and repositories, most notably:

  • arXiv (Cornell University)
  • ACS Nano
  • Physical Review Letters
  • Physical review. B./Physical review. B
  • Nano Letters

Among their recent publications are:

  • Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films (2020) in Physical Review Letters
  • Realization of Symmetry-Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic α-Bismuthene (2020) in ACS Nano
  • Dimensional crossover and band topology evolution in ultrathin semimetallic NiTe2 films (2021) in npj 2D Materials and Applications
  • Realization of unpinned two-dimensional dirac states in antimony atomic layers (2022) in Nature Communications
  • Realization of a two-dimensional Weyl semimetal and topological Fermi strings (2024) in Nature Communications

Their research addresses quantum and electronic properties of thin films and low-dimensional materials, investigating topics such as semimetal-to-semiconductor transitions, Dirac fermions, and topological semimetals.

In 1986, Tai-Chang Chiang was recognized as a Fellow of the American Physical Society (APS) for contributions to the understanding of bulk, surface, and interface states of metals and semiconductors using photoemission techniques.

Best Publications

  • Photoemission studies of quantum well states in thin films

    T.-C Chiang

  • Signatures of exciton condensation in a transition metal dichalcogenide

    Anshul Kogar;Melinda S. Rak;Sean Vig;Ali A. Husain

  • Dirac Fermions in Borophene.

    Baojie Feng;Osamu Sugino;Ro Ya Liu;Jin Zhang

  • Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)

    D. E. Eastman;T. C. Chiang;P. Heimann;F. J. Himpsel

  • Angle-resolved photoemission, valence-band dispersions E ( k → ) , and electron and hole lifetimes for GaAs

    T. C. Chiang;J. A. Knapp;M. Aono;D. E. Eastman

  • Emergence of charge density wave domain walls above the superconducting dome in TiSe2

    Y. I. Joe;X. M. Chen;P. Ghaemi;K. D. Finkelstein

  • Charge density wave transition in single-layer titanium diselenide

    Peng Chen;Yang-hao Chan;Xinyue Fang;Yi Zhang

  • Experimental realization of two-dimensional Dirac nodal line fermions in monolayer Cu 2 Si

    Baojie Feng;Botao Fu;Shusuke Kasamatsu;Suguru Ito

  • Electron-hole coupling and the charge density wave transition in TiSe2.

    T. E. Kidd;T. Miller;M. Y. Chou;T.-C. Chiang

  • Quantum-well states as fabry-Perot modes in a thin-film electron interferometer

    J. J. Paggel;T. Miller;T.-C. Chiang

  • Distance-Dependent Relaxation Shifts of Photoemission and Auger Energies for Xe on Pd(001)

    G. Kaindl;T. C. Chiang;D. E. Eastman;F. J. Himpsel

  • Unique Gap Structure and Symmetry of the Charge Density Wave in Single-Layer VSe_{2}.

    P. Chen;P. Chen;Woei Wu Pai;Y.-H. Chan;V. Madhavan

  • Quantum electronic stability of atomically uniform films.

    D.-A. Luh;T. Miller;J. J. Paggel;M. Y. Chou

  • Visualizing electronic chirality and Berry phases in graphene systems using photoemission with circularly polarized light.

    Y. Liu;G. Bian;T. Miller;T.-C. Chiang

  • Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si

    Baojie Feng;Botao Fu;Shusuke Kasamatsu;Suguru Ito

  • Thermal stability and electronic structure of atomically uniform Pb films on Si(111).

    M. H. Upton;C. M. Wei;C. M. Wei;M. Y. Chou;T. Miller

  • X-ray studies of phonon softening in tise2.

    M. Holt;P. Zschack;Hawoong Hong;M. Y. Chou

  • Quantum-well states in a metallic system: Ag on Au(111).

    T. Miller;A. Samsavar;G. E. Franklin;T.-C. Chiang

  • Large quantum-spin-Hall gap in single-layer 1T' WSe2.

    P. Chen;P. Chen;Woei Wu Pai;Y.-H. Chan;W.-L. Sun

  • Layer-resolved shifts of photoemission and Auger spectra from physisorbed rare-gas multilayers.

    T.-C. Chiang;G. Kaindl;T. Mandel

  • Interference between Bulk and Surface Photoemission Transitions in Ag(111).

    T. Miller;W. E. McMahon;T.-C. Chiang

Frequent Co-Authors

Thomas F. Miller
Thomas F. Miller California Institute of Technology
Mei-Yin Chou
Mei-Yin Chou Academia Sinica
Alexei V. Fedorov
Alexei V. Fedorov Lawrence Berkeley National Laboratory
James N Eckstein
James N Eckstein University of Illinois at Urbana-Champaign
F. J. Himpsel
F. J. Himpsel University of Wisconsin–Madison
Haydn Chen
Haydn Chen University of Macau
Shik Shin
Shik Shin University of Tokyo
Joseph E Greene
Joseph E Greene University of Illinois at Urbana-Champaign
Masakazu Aono
Masakazu Aono National Institute for Materials Science
Yuen-Ron Shen
Yuen-Ron Shen University of California, Berkeley

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