The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where James N Eckstein sits on this spectrum.
This scientist: 256 publications — 48th percentile
48% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where James N Eckstein sits on this spectrum.
This scientist: 47 D-Index — 15th percentile
15% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
James N Eckstein is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their primary research spans several interconnected fields including Physics and Astronomy and Materials Science, with specific focus areas in Atomic and Molecular Physics, Materials Chemistry, Condensed Matter Physics, Electrical and Electronic Engineering, and Biomedical Engineering.
The scientist's work centers on key topics such as Topological Materials and Phenomena, Graphene research and applications, Physics of Superconductivity and Magnetism, Quantum and electron transport phenomena, Advanced Condensed Matter Physics, Advanced Thermoelectric Materials and Devices, and Photonic and Optical Devices.
James N Eckstein has contributed to multiple peer-reviewed publications, with recent papers including:
Eckstein has collaborated frequently with co-authors such as Soorya Suresh Babu, Yang Bai, Joseph A. Hlevyack, Yao Li, and Meng-Kai Lin.
The scientist's research has been disseminated through notable venues including:
In recognition of their contributions, James N Eckstein was named a Fellow of the American Physical Society in 2005. The citation for this fellowship acknowledged their development of layer-by-layer growth techniques for oxide films utilized in fundamental studies and the creation of planar tunneling junctions from oxide superconductors and oxide magnets.
D. S. Marshall;D. S. Dessau;D. S. Dessau;A. G. Loeser;C. H. Park
C. H. Ahn;A. Bhattacharya;M. Di Ventra;J. N. Eckstein
J. Corson;R. Mallozzi;J. Orenstein;J. N. Eckstein
J. N. Eckstein;A. I. Ferguson;T. W. Hänsch
D. L. Feng;D. H. Lu;K. M. Shen;C. Kim
M. S. Osofsky;R. J. Soulen;S. A. Wolf;J. M. Broto
M. P. Warusawithana;C. Richter;C. Richter;J. A. Mundy;P. Roy
J. O’Donnell;M. S. Rzchowski;J. N. Eckstein;I. Bozovic
S. J. May;P. J. Ryan;J. L. Robertson;J.-W. Kim
D. G. Schlom;A. F. Marshall;J. T. Sizemore;Z. J. Chen
Anand Bhattacharya;S. J. May;S. G. E. Te Velthuis;M. Warusawithana
James N. Eckstein
C. Webb;S. L. Weng;James N Eckstein;N. Missert
Şerban Smadici;Peter Abbamonte;Anand Bhattacharya;Xiaofang Zhai
Maitri P. Warusawithana;Eugene V. Colla;James N Eckstein;M. B. Weissman
J. N. Eckstein;I. Bozovic;J. O’Donnell;M. Onellion
JT Kucera;TP Orlando;G Virshup;JN Eckstein
James N Eckstein;I. Bozovic;K. E. Von Dessonneck;D. G. Schlom
J. O’Donnell;M. Onellion;M. Rzchowski;James N Eckstein
Xiaofang Zhai;Long Cheng;Yang Liu;Christian M. Schlepütz
J. O'Donnell;A. E. Andrus;S. Oh;E. V. Colla
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