World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
58
Citations
11773
World Ranking
7710
National Ranking
2246

Bing-Lin Gu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bing-Lin Gu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 278 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bing-Lin Gu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bing-Lin Gu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 58 D-Index — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2005 - Fellow, The World Academy of Sciences

Overview

Bing-Lin Gu is affiliated with Tsinghua University in China. Their research spans multiple fields, including materials science and computer science, with a focus on interdisciplinary topics that merge advanced computational techniques with materials chemistry and electronic engineering.

Their main fields of study include:

  • Materials Science
  • Computer Science

Their subfields of study reflect a diverse range of technical domains:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Artificial Intelligence
  • Computational Theory and Mathematics
  • Molecular Biology

Bing-Lin Gu's work primarily addresses key topics such as:

  • Machine Learning in Materials Science
  • 2D Materials and Applications
  • Graphene research and applications
  • Computational Drug Discovery Methods
  • Protein Structure and Dynamics
  • Advanced Graph Neural Networks
  • Topological Materials and Phenomena

Their recent scholarly contributions include publications in a range of scientific journals and conferences. Representative works are:

  • "Topological semimetals from the perspective of first-principles calculations" (2020) in Journal of Applied Physics
  • "Heterogeneous relational message passing networks for molecular dynamics simulations" (2022) in npj Computational Materials
  • "Valley Depolarization Dynamics in Monolayer Transition-Metal Dichalcogenides: Role of the Satellite Valley" (2021) in Nano Letters
  • "Symmetry-adapted graph neural networks for constructing molecular dynamics force fields" (2021) in Science China Physics Mechanics and Astronomy
  • "Division and integration of theory and practice" (2023) in Engineering Education Review

Key publication venues where Bing-Lin Gu frequently publishes include:

  • arXiv (Cornell University)
  • Journal of Applied Physics
  • npj Computational Materials
  • Nano Letters
  • Science China Physics Mechanics and Astronomy

Collaborations form an integral part of their research. Frequent co-authors are:

  • Wenhui Duan
  • Chong Wang
  • Zun Wang
  • Sibo Zhao
  • Yong Xu

Bing-Lin Gu has been recognized with the following award:

  • Fellow, The World Academy of Sciences (2005)

Best Publications

  • Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping

    Qimin Yan;Bing Huang;Jie Yu;Fawei Zheng

  • Intrinsic magnetic topological insulators in van der Waals layered MnBi$_2$Te$_4$-family materials

    Jiaheng Li;Yang Li;Shiqiao Du;Zun Wang

  • Role of Symmetry in the Transport Properties of Graphene Nanoribbons under Bias

    Zuanyi Li;Haiyun Qian;Jian Wu;Bing-Lin Gu

  • Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials

    Jiaheng Li;Yang Li;Shiqiao Du;Zun Wang

  • Confined electron and hydrogenic donor states in a spherical quantum dot of GaAs-Ga1-xAlxAs.

    Jia-Lin Zhu;Jia-Jiong Xiong;Bing-Lin Gu

  • Continuous synthesis and characterization of silicon carbide nanorods

    Weiqiang Han;Shoushan Fan;Qunqing Li;Wenjie Liang

  • Half metallicity along the edge of zigzag boron nitride nanoribbons

    Fawei Zheng;Gang Zhou;Zhirong Liu;Jian Wu

  • Quantum manifestations of graphene edge stress and edge instability: a first-principles study.

    Bing Huang;Miao Liu;Ninghai Su;Jian Wu

  • Functionalized germanene as a prototype of large-gap two-dimensional topological insulators

    Chen Si;Junwei Liu;Yong Xu;Jian Wu

  • SYNTHESIS OF SILICON NITRIDE NANORODS USING CARBON NANOTUBE AS A TEMPLATE

    Weiqiang Han;Shoushan Fan;Qunqing Li;Binglin Gu

  • First-principles study on morphology and mechanical properties of single-walled carbon nanotube

    Gang Zhou;Wenhui Duan;Binglin Gu

  • Suppression of spin polarization in graphene nanoribbons by edge defects and impurities

    Bing Huang;Feng Liu;Jian Wu;Bing Lin Gu

  • Intrinsic anisotropy of thermal conductance in graphene nanoribbons

    Yong Xu;Xiaobin Chen;Bing-Lin Gu;Wenhui Duan

  • Making a field effect transistor on a single graphene nanoribbon by selective doping

    Bing Huang;Qimin Yan;Gang Zhou;Jian Wu

  • Metal-to-semiconductor transition in squashed armchair carbon nanotubes.

    Jun Qiang Lu;Jian Wu;Wenhui Duan;Feng Liu

  • Making a field effect transistor on a single graphene nanoribbon by selective doping

    Bing Huang;Qimin Yan;Gang Zhou;Jian Wu

  • Magnetically controllable topological quantum phase transitions in the antiferromagnetic topological insulator MnBi 2 Te 4

    Jiaheng Li;Chong Wang;Zetao Zhang;Bing-Lin Gu

  • Chemical functionalization of carbon nanotubes by carboxyl groups on stone-wales defects: a density functional theory study.

    Chenchen Wang;Gang Zhou;Haitao Liu;Jian Wu

  • Electronic structure and field-emission characteristics of open-ended single-walled carbon nanotubes.

    Gang Zhou;Wenhui Duan;Binglin Gu

  • Effect of defects on the thermal conductivity in a nanowire

    Ke-Qiu Chen;Ke-Qiu Chen;Wen-Xia Li;Wenhui Duan;Z. Shuai

  • Adsorption of gas molecules on graphene nanoribbons and its implication for nano-scale molecule sensor

    Bing Huang;Zuanyi Li;Zhirong Liu;Gang Zhou

Frequent Co-Authors

Wenhui Duan
Wenhui Duan Tsinghua University
Jian Wu
Jian Wu Tsinghua University
Zhirong Liu
Zhirong Liu Peking University
Yoshiyuki Kawazoe
Yoshiyuki Kawazoe Tohoku University
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Hui Hu
Hui Hu Iowa State University
Qi-Kun Xue
Qi-Kun Xue Southern University of Science and Technology
Bin Wang
Bin Wang University of Hawaii at Manoa
Xiaolong Zou
Xiaolong Zou Tsinghua University
Artem R. Oganov
Artem R. Oganov Skolkovo Institute of Science and Technology

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