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Şemsettin Altındal

Şemsettin Altındal

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Materials Science
Turkey
2026

D-Index & Metrics

Materials Science

D-Index
67
Citations
15074
World Ranking
5149
National Ranking
9

Research.com Recognitions

  • 2026 - Research.com Materials Science in Turkey Leader Award
  • 2025 - Research.com Materials Science in Turkey Leader Award

Overview

Şemsettin Altındal is affiliated with Gazi University in Turkey and has contributed extensively to the fields of engineering, physics, and materials science. Their research primarily focuses on semiconductor materials and interfaces, semiconductor devices, integrated circuits, and related failure analysis. The work also encompasses specialized topics such as silicon nanostructures, photoluminescence, solar cell technologies, nanowire synthesis, and dielectric properties of ceramics.

The scientist's research output is significant in electrical and electronic engineering, atomic and molecular physics and optics, and materials chemistry, with additional contributions in biomedical engineering and polymers and plastics. The concentration of publications within these areas outlines a multidisciplinary approach bridging physics, engineering, and materials science.

Şemsettin Altındal has been published frequently in several scientific venues, with notable representation in the following journals:

  • Journal of Materials Science Materials in Electronics
  • Physica B Condensed Matter
  • Physica Scripta
  • Applied Physics A
  • IEEE Sensors Journal

Key papers authored or co-authored by the scientist include:

  • Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures (2020, Sensors and Actuators A Physical)
  • A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures (2020, IEEE Sensors Journal)
  • Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage (2020, Physica B Condensed Matter)
  • A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm 2 O 3) polymer interlayer (2021, Physica Scripta)
  • Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures (2020, Physica B Condensed Matter)

Frequent collaborators include:

  • Yashar Azizian-Kalandaragh
  • Murat Ulusoy
  • Süleyman Özçelik
  • Ali Barkhordari
  • Gholamreza Pirgholi-Givi

The scientist's research spans several main topics:

  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon Nanostructures and Photoluminescence
  • Silicon and Solar Cell Technologies
  • Nanowire Synthesis and Applications
  • Dielectric properties of ceramics

This profile represents a comprehensive overview of Şemsettin Altındal's research contributions and collaborations, reflecting a broad engagement with advanced topics in semiconductor technology and materials research.

Best Publications

  • Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts

    Ş Karataş;Ş Altındal;A Türüt;A Özmen

  • The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes

    Ş. Altındal;S. Karadeniz;N. Tuğluoğlu;A. Tataroğlu

  • Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

    A. Tataroglu;Ş. Altındal;M. M. Bülbül

  • Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes

    A. Tataroğlu;Ş. Altındal

  • Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

    S. Zeyrek;Ş. Altındal;H. Yüzer;M.M. Bülbül

  • Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

    Ilbilge Dökme;Semsettin Altindal;Tuncay Tunç;Ibrahim Uslu

  • Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements

    Ş. Karataş;Ş. Altındal;A. Türüt;M. Çakar

  • The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

    O. Pakma;N. Serin;T. Serin;Ş. Altındal

  • Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures

    I. M. Afandiyeva;I. Dökme;Ş. Altındal;M. M. Bülbül

  • The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

    Şemsettin Altındal;İlbilge Dökme;M. Mahir Bülbül;Necati Yalçın

  • The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

    İlke Taşçıoğlu;Umut Aydemir;Şemsettin Altındal

  • Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures

    Ş. Karataş;Ş. Altındal;M. Çakar

  • On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

    Ilbilge Dökme;Şemsettin Altindal

  • Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes

    M. Özer;D.E. Yıldız;Ş. Altındal;M.M. Bülbül

  • Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures

    Engin Arslan;Şemsettin Altındal;Süleyman Özçelik;Ekmel Ozbay

  • The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

    Şemsettin Altındal;Habibe Uslu

  • The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

    A. Tataroğlu;Ş. Altındal

  • Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

    D. E. Yıldız;Ş. Altındal;H. Kanbur

  • The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes

    H. Kanbur;Ş. Altındal;A. Tataroğlu

  • Analysis of I-V characteristics on Au/n-type GaAs schottky structures in wide temperature range

    Ş. Karataş;Ş. Altındal

  • The behavior of the I‐V‐T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures

    Z. Tekeli;Ş. Altındal;M. Çakmak;S. Özçelik

  • On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

    F. Parlaktürk;Ş. Altındal;A. Tataroğlu;M. Parlak

Frequent Co-Authors

Ekmel Ozbay
Ekmel Ozbay Bilkent University
Fahrettin Yakuphanoglu
Fahrettin Yakuphanoglu Fırat University
Abbas Sabahi Namini
Abbas Sabahi Namini University of Mohaghegh Ardabili
Mehdi Shahedi Asl
Mehdi Shahedi Asl University of Kyrenia
Arash Ahmadivand
Arash Ahmadivand Rice University

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