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Şemsettin Altındal

Şemsettin Altındal

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Materials Science
Turkey
2026

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 67 5147 4978 9 8 388 15074

Şemsettin Altındal publications per year

The chart shows the history of publications by Şemsettin Altındal between 1994 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Şemsettin Altındal published across 33 years, from 1994 to 2026, averaging 12.9 papers a year. Output peaked at 30 publications in 2020. 19 of the 427 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1994 to 2026. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2020. 1994: 1 publication 1995: 1 publication 1996: 2 publications 1997: 5 publications 1998: 2 publications 1999: 1 publication 2000: 0 publications 2001: 1 publication 2002: 1 publication 2003: 5 publications 2004: 1 publication 2005: 8 publications 2006: 11 publications 2007: 15 publications 2008: 23 publications 2009: 13 publications 2010: 22 publications 2011: 22 publications 2012: 20 publications 2013: 17 publications 2014: 20 publications 2015: 18 publications 2016: 13 publications 2017: 23 publications 2018: 20 publications 2019: 24 publications 2020: 30 publications 2021: 26 publications 2022: 19 publications 2023: 22 publications 2024: 22 publications 2025: 18 publications 2026: 1 publication
1994 2026

427 publications in total across all disciplines

View publications per year as a table
Şemsettin Altındal: publications per year, 1994 to 2026
Year Publications
1994 1
1995 1
1996 2
1997 5
1998 2
1999 1
2000 0
2001 1
2002 1
2003 5
2004 1
2005 8
2006 11
2007 15
2008 23
2009 13
2010 22
2011 22
2012 20
2013 17
2014 20
2015 18
2016 13
2017 23
2018 20
2019 24
2020 30
2021 26
2022 19
2023 22
2024 22
2025 18
2026 1
Total 427
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Şemsettin Altındal publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Şemsettin Altındal sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 370–389 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 388 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356 388
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Şemsettin Altındal D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Şemsettin Altındal sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 66–67 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490 67
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2026 - Research.com Materials Science in Turkey Leader Award
  • 2025 - Research.com Materials Science in Turkey Leader Award

Overview

Şemsettin Altındal is affiliated with Gazi University in Turkey and has contributed extensively to the fields of engineering, physics, and materials science. Their research primarily focuses on semiconductor materials and interfaces, semiconductor devices, integrated circuits, and related failure analysis. The work also encompasses specialized topics such as silicon nanostructures, photoluminescence, solar cell technologies, nanowire synthesis, and dielectric properties of ceramics.

The scientist's research output is significant in electrical and electronic engineering, atomic and molecular physics and optics, and materials chemistry, with additional contributions in biomedical engineering and polymers and plastics. The concentration of publications within these areas outlines a multidisciplinary approach bridging physics, engineering, and materials science.

Şemsettin Altındal has been published frequently in several scientific venues, with notable representation in the following journals:

  • Journal of Materials Science Materials in Electronics
  • Physica B Condensed Matter
  • Physica Scripta
  • Applied Physics A
  • IEEE Sensors Journal

Key papers authored or co-authored by the scientist include:

  • Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures (2020, Sensors and Actuators A Physical)
  • A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures (2020, IEEE Sensors Journal)
  • Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage (2020, Physica B Condensed Matter)
  • A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm 2 O 3) polymer interlayer (2021, Physica Scripta)
  • Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures (2020, Physica B Condensed Matter)

Frequent collaborators include:

  • Yashar Azizian-Kalandaragh
  • Murat Ulusoy
  • Süleyman Özçelik
  • Ali Barkhordari
  • Gholamreza Pirgholi-Givi

The scientist's research spans several main topics:

  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon Nanostructures and Photoluminescence
  • Silicon and Solar Cell Technologies
  • Nanowire Synthesis and Applications
  • Dielectric properties of ceramics

This profile represents a comprehensive overview of Şemsettin Altındal's research contributions and collaborations, reflecting a broad engagement with advanced topics in semiconductor technology and materials research.

Best Publications

  • Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts

    Ş Karataş;Ş Altındal;A Türüt;A Özmen

  • The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes

    Ş. Altındal;S. Karadeniz;N. Tuğluoğlu;A. Tataroğlu

  • Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

    A. Tataroglu;Ş. Altındal;M. M. Bülbül

  • Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes

    A. Tataroğlu;Ş. Altındal

  • Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

    S. Zeyrek;Ş. Altındal;H. Yüzer;M.M. Bülbül

  • Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

    Ilbilge Dökme;Semsettin Altindal;Tuncay Tunç;Ibrahim Uslu

  • Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements

    Ş. Karataş;Ş. Altındal;A. Türüt;M. Çakar

  • The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

    O. Pakma;N. Serin;T. Serin;Ş. Altındal

  • Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures

    I. M. Afandiyeva;I. Dökme;Ş. Altındal;M. M. Bülbül

  • The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

    Şemsettin Altındal;İlbilge Dökme;M. Mahir Bülbül;Necati Yalçın

  • The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

    İlke Taşçıoğlu;Umut Aydemir;Şemsettin Altındal

  • Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures

    Ş. Karataş;Ş. Altındal;M. Çakar

  • On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures

    Ilbilge Dökme;Şemsettin Altindal

  • Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes

    M. Özer;D.E. Yıldız;Ş. Altındal;M.M. Bülbül

  • Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures

    Engin Arslan;Şemsettin Altındal;Süleyman Özçelik;Ekmel Ozbay

  • The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

    Şemsettin Altındal;Habibe Uslu

  • The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

    A. Tataroğlu;Ş. Altındal

  • Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

    D. E. Yıldız;Ş. Altındal;H. Kanbur

  • The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes

    H. Kanbur;Ş. Altındal;A. Tataroğlu

  • Analysis of I-V characteristics on Au/n-type GaAs schottky structures in wide temperature range

    Ş. Karataş;Ş. Altındal

  • The behavior of the I‐V‐T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures

    Z. Tekeli;Ş. Altındal;M. Çakmak;S. Özçelik

  • On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

    F. Parlaktürk;Ş. Altındal;A. Tataroğlu;M. Parlak

Frequent Co-Authors

Ekmel Ozbay
Ekmel Ozbay Bilkent University
Fahrettin Yakuphanoglu
Fahrettin Yakuphanoglu Fırat University
Abbas Sabahi Namini
Abbas Sabahi Namini University of Mohaghegh Ardabili
Mehdi Shahedi Asl
Mehdi Shahedi Asl University of Kyrenia
Arash Ahmadivand
Arash Ahmadivand Rice University

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