World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
15901
World Ranking
2474
National Ranking
68

Materials Science

D-Index
51
Citations
15823
World Ranking
9732
National Ranking
431

Myoung-Jae Lee publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Myoung-Jae Lee sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 230 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Myoung-Jae Lee D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Myoung-Jae Lee sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Myoung-Jae Lee is affiliated with the Daegu Gyeongbuk Institute of Science and Technology in South Korea. Their research primarily spans the fields of Physics and Astronomy as well as Engineering, with focused subfields including Atomic and Molecular Physics, and Optics; Astronomy and Astrophysics; Mechanics of Materials; Electrical and Electronic Engineering; and Nuclear and High Energy Physics.

The scientist's work engages with a variety of topics, emphasizing Dust and Plasma Wave Phenomena, Ionosphere and Magnetosphere Dynamics, Plasma Diagnostics and Applications, Magnetic Confinement Fusion Research, Metal and Thin Film Mechanics, Laser-induced Spectroscopy and Plasma, and High-pressure Geophysics and Materials.

Among recent publications by Myoung-Jae Lee are:

  • Characteristics of Shannon's Information Entropy of Atomic States in Strongly Coupled Plasma (2020, Entropy)
  • Characteristics of Nonthermal Dupree Diffusion on Space-Charge Wave in a Kappa Distribution Plasma Column with Turbulent Diffusion (2020, Entropy)

Other relevant works from the broader research context include:

  • Anisotropic temperature effects on Landau damping in Kappa-Maxwellian astrophysical plasmas (2020, Astroparticle Physics)
  • Effect of a DC gradient magnetic field on electron density in a weakly magnetized inductively coupled plasma (2024, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films)
  • Simulations of fusion edge plasmas by linear plasma devices: physics and plasma-material interactions (2022, Journal of the Korean Physical Society)

Frequent publication venues where Myoung-Jae Lee's work appears include:

  • Entropy
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of the Korean Physical Society
  • Plasma Sources Science and Technology
  • Waves in Random and Complex Media

Collaborative efforts feature regular coauthors such as Young-Dae Jung, Yilang Jiang, Ju-Ho Kim, Chin-Wook Chung, and In Sun Park.

Best Publications

  • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

    Myoung-Jae Lee;Chang Bum Lee;Dongsoo Lee;Seung Ryul Lee

  • Reproducible resistance switching in polycrystalline NiO films

    S. Seo;M. J. Lee;D. H. Seo;E. J. Jeoung

  • Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

    I.G. Baek;M.S. Lee;S. Seo;M.J. Lee

  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films

    D. C. Kim;S. Seo;S. E. Ahn;D.-S. Suh

  • Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

    Myoung-Jae Lee;Youngsoo Park;Dong-Seok Suh;Eun-Hong Lee

  • Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

    Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  • Random Circuit Breaker Network Model for Unipolar Resistance Switching

    Seung Chul Chae;Jae Sung Lee;Sejin Kim;Shin Buhm Lee

  • In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

    Gyeong-Su Park;Young Bae Kim;Seong Yong Park;Xiang Shu Li

  • Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS2 and Orthorhombic p-Type SnS Crystals

    Ji-Hoon Ahn;Myoung-Jae Lee;Hoseok Heo;Ji Ho Sung

  • Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

    Gyeong-Su Park;Xiang-Shu Li;Dong-Chirl Kim;Ran-Ju Jung

  • Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

    I.G. Baek;D.C. Kim;M.J. Lee;H.-J. Kim

  • Improvement of resistive memory switching in NiO using IrO2

    D. C. Kim;M. J. Lee;S. E. Ahn;S. Seo

  • A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories†

    Myoung-Jae Lee;Sunae Seo;Dong-Chirl Kim;Seung-Eon Ahn

  • Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

    Myoung-Jae Lee;Sun I. Kim;Chang B. Lee;Huaxiang Yin

  • 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

    Myoung-Jae Lee;Youngsoo Park;Bo-Soo Kang;Seung-Eon Ahn

  • Conductivity switching characteristics and reset currents in NiO films

    S. Seo;M. J. Lee;D. H. Seo;S. K. Choi

  • Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity

    Myoung-Jae Lee;Ji-Hoon Ahn;Ji Ho Sung;Hoseok Heo

  • Effects of metal electrodes on the resistive memory switching property of NiO thin films

    C. B. Lee;B. S. Kang;A. Benayad;M. J. Lee

  • Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

    Dongsoo Lee;Hyejung Choi;Hyunjun Sim;Dooho Choi

  • Modeling for bipolar resistive memory switching in transition-metal oxides

    Ji Hyun Hur;Myoung-Jae Lee;Chang Bum Lee;Young-Bae Kim

Frequent Co-Authors

Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
Young-soo Park
Young-soo Park Korea University
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
U-In Chung
U-In Chung Samsung (South Korea)
Bae Ho Park
Bae Ho Park Konkuk University
Tae Won Noh
Tae Won Noh Seoul National University
Moon-Ho Jo
Moon-Ho Jo Pohang University of Science and Technology
Kinam Kim
Kinam Kim Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Ungyu Paik
Ungyu Paik Hanyang University

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