World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
15901
World Ranking
2474
National Ranking
68

Materials Science

D-Index
51
Citations
15823
World Ranking
9734
National Ranking
431

Overview

Myoung-Jae Lee is affiliated with the Daegu Gyeongbuk Institute of Science and Technology in South Korea. Their research primarily spans the fields of Physics and Astronomy as well as Engineering, with focused subfields including Atomic and Molecular Physics, and Optics; Astronomy and Astrophysics; Mechanics of Materials; Electrical and Electronic Engineering; and Nuclear and High Energy Physics.

The scientist's work engages with a variety of topics, emphasizing Dust and Plasma Wave Phenomena, Ionosphere and Magnetosphere Dynamics, Plasma Diagnostics and Applications, Magnetic Confinement Fusion Research, Metal and Thin Film Mechanics, Laser-induced Spectroscopy and Plasma, and High-pressure Geophysics and Materials.

Among recent publications by Myoung-Jae Lee are:

  • Characteristics of Shannon's Information Entropy of Atomic States in Strongly Coupled Plasma (2020, Entropy)
  • Characteristics of Nonthermal Dupree Diffusion on Space-Charge Wave in a Kappa Distribution Plasma Column with Turbulent Diffusion (2020, Entropy)

Other relevant works from the broader research context include:

  • Anisotropic temperature effects on Landau damping in Kappa-Maxwellian astrophysical plasmas (2020, Astroparticle Physics)
  • Effect of a DC gradient magnetic field on electron density in a weakly magnetized inductively coupled plasma (2024, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films)
  • Simulations of fusion edge plasmas by linear plasma devices: physics and plasma-material interactions (2022, Journal of the Korean Physical Society)

Frequent publication venues where Myoung-Jae Lee's work appears include:

  • Entropy
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of the Korean Physical Society
  • Plasma Sources Science and Technology
  • Waves in Random and Complex Media

Collaborative efforts feature regular coauthors such as Young-Dae Jung, Yilang Jiang, Ju-Ho Kim, Chin-Wook Chung, and In Sun Park.

Best Publications

  • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

    Myoung-Jae Lee;Chang Bum Lee;Dongsoo Lee;Seung Ryul Lee

  • Reproducible resistance switching in polycrystalline NiO films

    S. Seo;M. J. Lee;D. H. Seo;E. J. Jeoung

  • Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

    I.G. Baek;M.S. Lee;S. Seo;M.J. Lee

  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films

    D. C. Kim;S. Seo;S. E. Ahn;D.-S. Suh

  • Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

    Myoung-Jae Lee;Youngsoo Park;Dong-Seok Suh;Eun-Hong Lee

  • Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

    Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  • Random Circuit Breaker Network Model for Unipolar Resistance Switching

    Seung Chul Chae;Jae Sung Lee;Sejin Kim;Shin Buhm Lee

  • In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

    Gyeong-Su Park;Young Bae Kim;Seong Yong Park;Xiang Shu Li

  • Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS2 and Orthorhombic p-Type SnS Crystals

    Ji-Hoon Ahn;Myoung-Jae Lee;Hoseok Heo;Ji Ho Sung

  • Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

    Gyeong-Su Park;Xiang-Shu Li;Dong-Chirl Kim;Ran-Ju Jung

  • Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

    I.G. Baek;D.C. Kim;M.J. Lee;H.-J. Kim

  • Improvement of resistive memory switching in NiO using IrO2

    D. C. Kim;M. J. Lee;S. E. Ahn;S. Seo

  • A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories†

    Myoung-Jae Lee;Sunae Seo;Dong-Chirl Kim;Seung-Eon Ahn

  • Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

    Myoung-Jae Lee;Sun I. Kim;Chang B. Lee;Huaxiang Yin

  • 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

    Myoung-Jae Lee;Youngsoo Park;Bo-Soo Kang;Seung-Eon Ahn

  • Conductivity switching characteristics and reset currents in NiO films

    S. Seo;M. J. Lee;D. H. Seo;S. K. Choi

  • Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity

    Myoung-Jae Lee;Ji-Hoon Ahn;Ji Ho Sung;Hoseok Heo

  • Effects of metal electrodes on the resistive memory switching property of NiO thin films

    C. B. Lee;B. S. Kang;A. Benayad;M. J. Lee

  • Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

    Dongsoo Lee;Hyejung Choi;Hyunjun Sim;Dooho Choi

  • Modeling for bipolar resistive memory switching in transition-metal oxides

    Ji Hyun Hur;Myoung-Jae Lee;Chang Bum Lee;Young-Bae Kim

Frequent Co-Authors

Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
Young-soo Park
Young-soo Park Korea University
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
U-In Chung
U-In Chung Samsung (South Korea)
Bae Ho Park
Bae Ho Park Konkuk University
Tae Won Noh
Tae Won Noh Seoul National University
Moon-Ho Jo
Moon-Ho Jo Pohang University of Science and Technology
Kinam Kim
Kinam Kim Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Ungyu Paik
Ungyu Paik Hanyang University

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