Condensed matter physics, Ferroelectricity, Polarization, Thin film and Optoelectronics are his primary areas of study. The Transition temperature research he does as part of his general Condensed matter physics study is frequently linked to other disciplines of science, such as Exponent, therefore creating a link between diverse domains of science. His studies in Ferroelectricity integrate themes in fields like Electric field, Hysteresis and Capacitor.
His work focuses on many connections between Polarization and other disciplines, such as Nucleation, that overlap with his field of interest in Superparamagnetism and Magnetic memory. His biological study spans a wide range of topics, including Bismuth titanate, Scanning probe microscopy, Flexoelectricity, Mineralogy and Aurivillius. His Optoelectronics study combines topics in areas such as Inorganic chemistry, Hall effect and Transmission spectroscopy.
Tae Won Noh spends much of his time researching Condensed matter physics, Thin film, Ferroelectricity, Optoelectronics and Superconductivity. The study incorporates disciplines such as Scattering and Electrical resistivity and conductivity in addition to Condensed matter physics. His Thin film research is multidisciplinary, incorporating perspectives in Crystallography, Analytical chemistry, Epitaxy and Multiferroics.
His Ferroelectricity study integrates concerns from other disciplines, such as Polarization, Oxide and Capacitor. The concepts of his Optoelectronics study are interwoven with issues in Layer and Nanotechnology. His work carried out in the field of Electronic structure brings together such families of science as Fermi level and Photoemission spectroscopy.
His primary areas of study are Condensed matter physics, Thin film, Optoelectronics, Superconductivity and Ferromagnetism. Tae Won Noh works mostly in the field of Condensed matter physics, limiting it down to concerns involving Hall effect and, occasionally, Berry connection and curvature. His Thin film research is multidisciplinary, incorporating elements of Layer, Composite material, Oxide and Ferroelectricity.
His work on Piezoresponse force microscopy as part of general Ferroelectricity research is frequently linked to Polarization, thereby connecting diverse disciplines of science. Tae Won Noh is interested in Flexoelectricity, which is a branch of Optoelectronics. His Ferromagnetism research is multidisciplinary, incorporating perspectives in Atomic units and Coercivity.
His primary areas of investigation include Condensed matter physics, Ferromagnetism, Thin film, Ferroelectricity and Hall effect. His Condensed matter physics research incorporates themes from Quantum and Dielectric. Tae Won Noh has researched Ferromagnetism in several fields, including Heterojunction and Coercivity.
His research in Thin film intersects with topics in Potential well, Configuration interaction, Scattering and Atomic orbital. Optoelectronics covers Tae Won Noh research in Ferroelectricity. His biological study spans a wide range of topics, including Berry connection and curvature and Antiferromagnetism.
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Lanthanum-substituted bismuth titanate for use in non-volatile memories
B. H. Park;B. S. Kang;S. D. Bu;T. W. Noh.
Ferromagnetism induced by clustered Co in Co-doped anatase TiO2 thin films.
J.-Y. Kim;J.-H. Park;B.-G. Park;H.-J. Noh.
Physical Review Letters (2003)
Giant flexoelectric effect in ferroelectric epitaxial thin films.
D. Lee;A. Yoon;S. Y. Jang;J.-G. Yoon.
Physical Review Letters (2011)
Random Circuit Breaker Network Model for Unipolar Resistance Switching
Seung Chul Chae;Jae Sung Lee;Sejin Kim;Shin Buhm Lee.
Advanced Materials (2008)
Experimental study of the three-dimensional ac conductivity and dielectric constant of a conductor-insulator composite near the percolation threshold.
Yi Song;Tae Won Noh;Sung-Ik Lee;James R. Gaines.
Physical Review B (1986)
Polarization Relaxation Induced by a Depolarization Field in Ultrathin Ferroelectric BaTiO 3 Capacitors
D. J. Kim;J. Y. Jo;Y. S. Kim;Y. J. Chang.
Physical Review Letters (2005)
Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface
Y. W. Yin;Y. W. Yin;J. D. Burton;Y-M. Kim;A. Y. Borisevich.
Nature Materials (2013)
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
D. Lee;S. H. Baek;T. H. Kim;J.-G. Yoon.
Physical Review B (2011)
Mid-infrared properties of a VO 2 film near the metal-insulator transition
H. S. Choi;J. S. Ahn;J. H. Jung;T. W. Noh.
Physical Review B (1996)
Resistive switching phenomena: A review of statistical physics approaches
Jae Sung Lee;Shinbuhm Lee;Tae Won Noh.
Applied physics reviews (2015)
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