World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
76
Citations
25009
World Ranking
3232
National Ranking
101

Tae Won Noh publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tae Won Noh sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 505 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tae Won Noh D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tae Won Noh sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tae Won Noh is affiliated with Seoul National University in South Korea. Their research predominantly focuses on materials science and physics, with specific attention to condensed matter physics and electronic, optical, and magnetic materials.

Their work covers diverse topics including advanced condensed matter physics, electronic and structural properties of oxides, magnetic and transport properties of perovskites and related materials, multiferroics and related materials, ferroelectric and piezoelectric materials, physics of superconductivity and magnetism, and topological materials and phenomena.

Tae Won Noh has contributed to many scientific publications across several prominent journals. Their recent papers include:

  • Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films, 2020, Nano Letters
  • Stabilizing hidden room-temperature ferroelectricity via a metastable atomic distortion pattern, 2020, Nature Communications
  • Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite thin films, 2021, Nature Materials
  • Constructing Polymorphic Nanodomains in BaTiO3 Films via Epitaxial Symmetry Engineering, 2020, Advanced Functional Materials
  • Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal, 2020, Physical Review Letters

Tae Won Noh frequently publishes in venues such as arXiv (Cornell University), Nature Communications, Physical Review B, Nano Letters, and Advanced Materials.

Collaboration is a notable aspect of their work, with regular coauthors including Miyoung Kim, Eun Kyo Ko, Changyoung Kim, Jeong Rae Kim, and Junsik Mun.

Their main fields of study encompass:

  • Materials Science
  • Physics and Astronomy

Subfields include:

  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Key research topics covered in their publications are:

  • Advanced Condensed Matter Physics
  • Electronic and Structural Properties of Oxides
  • Magnetic and transport properties of perovskites and related materials
  • Multiferroics and related materials
  • Ferroelectric and Piezoelectric Materials
  • Physics of Superconductivity and Magnetism
  • Topological Materials and Phenomena

Best Publications

  • Lanthanum-substituted bismuth titanate for use in non-volatile memories

    B. H. Park;B. S. Kang;S. D. Bu;T. W. Noh

  • Novel Jeff=1/2 Mott state induced by relativistic spin-orbit coupling in Sr2IrO4.

    B. J. Kim;Hosub Jin;S. J. Moon;J.-Y. Kim

  • Dimensionality-controlled insulator-metal transition and correlated metallic state in 5d transition metal oxides Sr n+1Ir nO3n+1 (n=1, 2, and infinity)

    S. J. Moon;H. Jin;Kyung Wan Kim;W. S. Choi

  • Giant flexoelectric effect in ferroelectric epitaxial thin films.

    D. Lee;A. Yoon;S. Y. Jang;J.-G. Yoon

  • Polarization Relaxation Induced by a Depolarization Field in Ultrathin Ferroelectric BaTiO 3 Capacitors

    D. J. Kim;J. Y. Jo;Y. S. Kim;Y. J. Chang

  • Experimental study of the three-dimensional ac conductivity and dielectric constant of a conductor-insulator composite near the percolation threshold.

    Yi Song;Tae Won Noh;Sung-Ik Lee;James R. Gaines

  • Random Circuit Breaker Network Model for Unipolar Resistance Switching

    Seung Chul Chae;Jae Sung Lee;Sejin Kim;Shin Buhm Lee

  • Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures.

    Lingfei Wang;Qiyuan Feng;Qiyuan Feng;Yoonkoo Kim;Rokyeon Kim

  • Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

    Y. W. Yin;Y. W. Yin;J. D. Burton;Y-M. Kim;A. Y. Borisevich

  • Domain switching kinetics in disordered ferroelectric thin films.

    J. Y. Jo;H. S. Han;J.-G. Yoon;T. K. Song

  • Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

    D. Lee;S. H. Baek;T. H. Kim;J.-G. Yoon

  • Mid-infrared properties of a VO 2 film near the metal-insulator transition

    H. S. Choi;J. S. Ahn;J. H. Jung;T. W. Noh

  • Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals Crystals.

    Cheng-Tai Kuo;Michael Neumann;Karuppannan Balamurugan;Hyun Ju Park

  • Critical thickness of ultrathin ferroelectric BaTiO3 films

    Y. S. Kim;D. H. Kim;J. D. Kim;Y. J. Chang

  • Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

    S. H. Chang;J. S. Lee;S. C. Chae;S. B. Lee

  • Determination of electronic band structures of CaMnO 3 and LaMnO 3 using optical-conductivity analyses

    J. H. Jung;K. H. Kim;D. J. Eom;T. W. Noh

  • Formation of Co nanoclusters in epitaxial Ti0.96Co0.04O2 thin films and their ferromagnetism

    D. H. Kim;J. S. Yang;K. W. Lee;S. D. Bu

  • Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12

    Unknown

  • Temperature dependence of the electronic structure of the J eff = 1 2 Mott insulator Sr 2 IrO 4 studied by optical spectroscopy

    SJ Moon;Hosub Jin;WS Choi;JS Lee

  • Nonlinear dynamics of domain-wall propagation in epitaxial ferroelectric thin films.

    Ji Young Jo;Sang Mo Yang;T. H. Kim;Ho Nyung Lee

  • Systematic trends in the electronic structure parameters of the 4 d transition-metal oxides Sr M O 3 ( M = Zr , Mo, Ru, and Rh)

    Y. S. Lee;J. S. Lee;T. W. Noh;Douck Young Byun

  • Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

    S. H. Chang;S. C. Chae;S. B. Lee;C. Liu

  • Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films

    Hyejin Ryu;P. Murugavel;J. H. Lee;S. C. Chae

  • Fundamental thickness limit of itinerant ferromagnetic SrRuO(3) thin films.

    Young Jun Chang;Choong H. Kim;S.-H. Phark;Y. S. Kim

Frequent Co-Authors

Miyoung Kim
Miyoung Kim Seoul National University
Yoshiteru Maeno
Yoshiteru Maeno Kyoto University
Aaron Bostwick
Aaron Bostwick Lawrence Berkeley National Laboratory
Tae Kwon Song
Tae Kwon Song Changwon National University
Eli Rotenberg
Eli Rotenberg Lawrence Berkeley National Laboratory
Chang-Beom Eom
Chang-Beom Eom University of Wisconsin–Madison
Ho Nyung Lee
Ho Nyung Lee Oak Ridge National Laboratory
Woo Seok Choi
Woo Seok Choi Sungkyunkwan University
Myoung-Jae Lee
Myoung-Jae Lee Daegu Gyeongbuk Institute of Science and Technology
Long Qing Chen
Long Qing Chen Pennsylvania State University

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