2026 Bae Ho Park: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	48	10709	10346	477	470	219	13024

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

10709

10346

477

470

219

13024

Overview

Bae Ho Park is a researcher affiliated with Konkuk University in South Korea, focusing primarily on the fields of Materials Science and Engineering. Their work encompasses a broad range of topics within these areas, including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics and Optics, as well as Cellular and Molecular Neuroscience.

The researcher's publication record includes contributions to multiple scientific journals and conferences, with frequent appearances in venues such as NPG Asia Materials, the Journal of the Korean Physical Society, Nanomaterials, Advanced Materials, and the Journal of Physics D Applied Physics.

Park has coauthored works with several frequent collaborators, including Chansoo Yoon, Jin Sik Choi, Gwangtaek Oh, Ji Hye Lee, and Eun Hee Kee. These collaborations have produced a substantial volume of research outputs.

Their research interests are reflected in the main topics of their published work, notably:

Advanced Memory and Neural Computing
Graphene Research and Applications
Ferroelectric and Negative Capacitance Devices
2D Materials and Applications
Multiferroics and Related Materials
Neuroscience and Neural Engineering
Ferroelectric and Piezoelectric Materials

Recent papers authored or coauthored by Bae Ho Park include:

"Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films," 2022, Nanomaterials
"Semiconductor-less vertical transistor with ION/IOFF of 106," 2021, Nature Communications
"Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy," 2022, Advanced Materials
"Nanotribology of 2D materials and their macroscopic applications," 2020, Journal of Physics D Applied Physics
"Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4," 2020, NPG Asia Materials

Best Publications

Lanthanum-substituted bismuth titanate for use in non-volatile memories

B. H. Park;B. S. Kang;S. D. Bu;T. W. Noh

2730
Citations
Reproducible resistance switching in polycrystalline NiO films

S. Seo;M. J. Lee;D. H. Seo;E. J. Jeoung

1217
Citations
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Myoung-Jae Lee;Youngsoo Park;Dong-Seok Suh;Eun-Hong Lee

538
Citations
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

502
Citations
Interference effect on Raman spectrum of graphene on SiO 2 / Si

Duhee Yoon;Hyerim Moon;Young Woo Son;Jin Sik Choi

399
Citations
Synthesis of Highly Crystalline and Monodisperse Cobalt Ferrite Nanocrystals

Taeghwan Hyeon;Yunhee Chung;Jongnam Park;Su Seong Lee

378
Citations
Friction anisotropy-driven domain imaging on exfoliated monolayer graphene.

Jin Sik Choi;Jin-Soo Kim;Ik-Su Byun;Duk Hyun Lee

361
Citations
Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire.

Kazuki Nagashima;Takeshi Yanagida;Takeshi Yanagida;Keisuke Oka;Masateru Taniguchi;Masateru Taniguchi

286
Citations
Variations in the Raman Spectrum as a Function of the Number \ofGraphene Layers

Duhee Yoon;Hyerim Moon;Hyeonsik Cheong;Jin Sik Choi

283
Citations
A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories†

Myoung-Jae Lee;Sunae Seo;Dong-Chirl Kim;Seung-Eon Ahn

282
Citations
Conductivity switching characteristics and reset currents in NiO films

S. Seo;M. J. Lee;D. H. Seo;S. K. Choi

257
Citations
Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes

Sahwan Hong;Taekjib Choi;Ji Hoon Jeon;Yunseok Kim;Yunseok Kim

241
Citations
Write Current Reduction in Transition Metal Oxide Based Resistance-Change Memory**

Seung-Eon Ahn;Myoung-Jae Lee;Youngsoo Park;Bo Soo Kang

202
Citations
Nanoscale lithography on monolayer graphene using hydrogenation and oxidation.

Ik-Su Byun;Duhee Yoon;Jin Sik Choi;Inrok Hwang

178
Citations
Nanotribological Properties of Fluorinated, Hydrogenated, and Oxidized Graphenes

Jae-Hyeon Ko;Sangku Kwon;Ik-Su Byun;Jin Sik Choi

159
Citations
Engineering Optical and Electronic Properties of WS2 by Varying the Number of Layers

Hyun Cheol Kim;Hakseong Kim;Jae Ung Lee;Han Byeol Lee

156
Citations
Electrode dependence of resistance switching in polycrystalline NiO films

S. Seo;M. J. Lee;D. C. Kim;S. E. Ahn

149
Citations
High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications

Bo Soo Kang;Seung-Eon Ahn;Myoung-Jae Lee;Genrikh Stefanovich

148
Citations
Resistive-switching memory effects of NiO nanowire/metal junctions.

Keisuke Oka;Takeshi Yanagida;Kazuki Nagashima;Tomoji Kawai

139
Citations
First-principles modeling of resistance switching in perovskite oxide material

Sang Ho Jeon;Bae Ho Park;Jaichan Lee;Bora Lee

139
Citations
Nanoscale Lithography on Monolayer Graphene Using Hydrogenation and

Oxidation Byun;Duhee Yoon;Jin Sik Choi;Duk Hyun Lee

0
Citations