World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
70
Citations
19282
World Ranking
4393
National Ranking
160

Seungwu Han publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Seungwu Han sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 267 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Seungwu Han D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Seungwu Han sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 70 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Seungwu Han is affiliated with Seoul National University in South Korea and has contributed extensively to research in materials science and engineering. Their primary research focuses on materials chemistry, with significant cross-disciplinary work in electrical and electronic engineering.

The scientist's research portfolio covers numerous subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, renewable energy and sustainability, and electronic, optical, and magnetic materials.

Key topics in Seungwu Han's work include:

  • Machine learning in materials science
  • Electronic and structural properties of oxides
  • Chalcogenide semiconductor thin films
  • X-ray diffraction in crystallography
  • Semiconductor materials and devices
  • Phase-change materials and chalcogenides
  • Advanced photocatalysis techniques

The scientist has published multiple papers across well-known academic venues. Frequent publication outlets include:

  • arXiv (Cornell University) with 13 publications
  • ACS Applied Materials & Interfaces with 5 publications
  • Computational Materials Science with 4 publications
  • ACS Nano with 3 publications
  • SSRN Electronic Journal with 3 publications

Notable recent papers by Seungwu Han are:

  • "Scalable Parallel Algorithm for Graph Neural Network Interatomic Potentials in Molecular Dynamics Simulations," 2024, Journal of Chemical Theory and Computation
  • "Best practices in machine learning for chemistry," 2021, Nature Chemistry
  • "Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity," 2022, npj 2D Materials and Applications
  • "Adatom Doping of Transition Metals in ReSe2 Nanosheets for Enhanced Electrocatalytic Hydrogen Evolution Reaction," 2020, ACS Nano
  • "A band-gap database for semiconducting inorganic materials calculated with hybrid functional," 2020, Scientific Data

Seungwu Han has collaborated frequently with several co-authors, including Youngho Kang, Sungwoo Kang, Jisu Jung, Suyeon Ju, and Chang-Ho Hong. The number of joint publications with these collaborators ranges from 12 to 16, indicating ongoing and productive research partnerships within their scientific community.

Best Publications

  • Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

    Deok-Hwang Kwon;Kyung Min Kim;Jae Hyuck Jang;Jong Myeong Jeon

  • Development of new interatomic potentials appropriate for crystalline and liquid iron

    M I Mendelev;S Han;D J Srolovitz;Graeme Ackland

  • Development of an interatomic potential for phosphorus impurities in α-iron

    Graeme Ackland;M.I. Mendelev;D.J. Srolovitz;S. Han

  • Magnetic ordering at the edges of graphitic fragments: Magnetic tail interactions between the edge-localized states

    Hosik Lee;Young-Woo Son;Noejung Park;Seungwu Han

  • Development of an interatomic potential for phosphorus impurities in iron

    G. J. Ackland;M. I. Mendelev;D. Srolovitz;S. Han

  • Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

    Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  • Best practices in machine learning for chemistry.

    Nongnuch Artrith;Keith T. Butler;François Xavier Coudert;Seungwu Han

  • Hydrated Manganese(II) Phosphate (Mn3(PO4)2·3H2O) as a Water Oxidation Catalyst

    Kyoungsuk Jin;Jimin Park;Joohee Lee;Ki Dong Yang

  • Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

    Seong Keun Kim;Gyu-Jin Choi;Sang Young Lee;Minha Seo

  • Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.

    Jaeho Choi;Sunghak Park;Joohee Lee;Kootak Hong

  • Oxygen vacancy clustering and electron localization in oxygen-deficient SrTiO(3): LDA + U study.

    Do Duc Cuong;Bora Lee;Kyeong Mi Choi;Hyo-Shin Ahn

  • First-principles study on doping and phase stability of HfO 2

    Choong-Ki Lee;Eunae Cho;Hyo-Sug Lee;Cheol Seong Hwang

  • Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

    Seong Keun Kim;Sang Woon Lee;Jeong Hwan Han;Bora Lee

  • First-principles study of point defects in rutile Ti O 2 − x

    Eunae Cho;Seungwu Han;Hyo-Shin Ahn;Kwang-Ryeol Lee

  • Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

    Kanghoon Yim;Youn Yong;Joohee Lee;Kyuhyun Lee

  • A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

    Kyung Min Kim;Byung Joon Choi;Min Hwan Lee;Gun Hwan Kim

  • Wafer-scale transferable molybdenum disulfide thin-film catalysts for photoelectrochemical hydrogen production

    Ki Chang Kwon;Seokhoon Choi;Kootak Hong;Cheon Woo Moon

  • Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

    Hyun-Suk Kim;Sang Ho Jeon;Joon Seok Park;Tae Sang Kim

  • Effect of Fe Segregation on the Migration of a Non-Symmetric Σ5 Tilt Grain Boundary in Al

    M I Mendelev;D J Srolovitz;Graeme Ackland;S Han

  • Role of the localized states in field emission of carbon nanotubes

    Seungwu Han;Jisoon Ihm

  • Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoelectronic Semiconductor Memory

    Seong Keun Kim;Sang Woon Lee;Jeong Hwan Han;Bora Lee

Frequent Co-Authors

Cheol Seong Hwang
Cheol Seong Hwang Seoul National University
Jisoon Ihm
Jisoon Ihm Seoul National University
Ho Won Jang
Ho Won Jang Seoul National University
Noejung Park
Noejung Park Ulsan National Institute of Science and Technology
David J. Srolovitz
David J. Srolovitz University of Hong Kong
Young-Woo Son
Young-Woo Son Korea Institute for Advanced Study
Graeme Ackland
Graeme Ackland University of Edinburgh
Bae Ho Park
Bae Ho Park Konkuk University
Soo Young Kim
Soo Young Kim Korea University
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University

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