Seungwu Han

Overview

Best Publications

• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

  Deok-Hwang Kwon;Kyung Min Kim;Jae Hyuck Jang;Jong Myeong Jeon

  2349
  Citations

• Development of new interatomic potentials appropriate for crystalline and liquid iron

  M I Mendelev;S Han;D J Srolovitz;Graeme Ackland

  1579
  Citations

• Development of an interatomic potential for phosphorus impurities in α-iron

  Graeme Ackland;M.I. Mendelev;D.J. Srolovitz;S. Han

  830
  Citations

• Magnetic ordering at the edges of graphitic fragments: Magnetic tail interactions between the edge-localized states

  Hosik Lee;Young-Woo Son;Noejung Park;Seungwu Han

  566
  Citations

• Development of an interatomic potential for phosphorus impurities in iron

  G. J. Ackland;M. I. Mendelev;D. Srolovitz;S. Han

  559
  Citations

• Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

  Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  502
  Citations

• Best practices in machine learning for chemistry.

  Nongnuch Artrith;Keith T. Butler;François Xavier Coudert;Seungwu Han

  430
  Citations

• Hydrated Manganese(II) Phosphate (Mn3(PO4)2·3H2O) as a Water Oxidation Catalyst

  Kyoungsuk Jin;Jimin Park;Joohee Lee;Ki Dong Yang

  383
  Citations

• Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

  Seong Keun Kim;Gyu-Jin Choi;Sang Young Lee;Minha Seo

  378
  Citations

• Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.

  Jaeho Choi;Sunghak Park;Joohee Lee;Kootak Hong

  370
  Citations

• Oxygen vacancy clustering and electron localization in oxygen-deficient SrTiO(3): LDA + U study.

  Do Duc Cuong;Bora Lee;Kyeong Mi Choi;Hyo-Shin Ahn

  346
  Citations

• First-principles study on doping and phase stability of HfO 2

  Choong-Ki Lee;Eunae Cho;Hyo-Sug Lee;Cheol Seong Hwang

  325
  Citations

• Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

  Seong Keun Kim;Sang Woon Lee;Jeong Hwan Han;Bora Lee

  283
  Citations

• First-principles study of point defects in rutile Ti O 2 − x

  Eunae Cho;Seungwu Han;Hyo-Shin Ahn;Kwang-Ryeol Lee

  282
  Citations

• Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations

  Kanghoon Yim;Youn Yong;Joohee Lee;Kyuhyun Lee

  255
  Citations

• A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

  Kyung Min Kim;Byung Joon Choi;Min Hwan Lee;Gun Hwan Kim

  229
  Citations

• Wafer-scale transferable molybdenum disulfide thin-film catalysts for photoelectrochemical hydrogen production

  Ki Chang Kwon;Seokhoon Choi;Kootak Hong;Cheon Woo Moon

  205
  Citations

• Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

  Hyun-Suk Kim;Sang Ho Jeon;Joon Seok Park;Tae Sang Kim

  203
  Citations

• Effect of Fe Segregation on the Migration of a Non-Symmetric Σ5 Tilt Grain Boundary in Al

  M I Mendelev;D J Srolovitz;Graeme Ackland;S Han

  180
  Citations

• Role of the localized states in field emission of carbon nanotubes

  Seungwu Han;Jisoon Ihm

  179
  Citations

• Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoelectronic Semiconductor Memory

  Seong Keun Kim;Sang Woon Lee;Jeong Hwan Han;Bora Lee

  1
  Citations