World's Best Scientists 2026 revealed!
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Fei Gao

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 71 4214 4080 1128 1062 486 19559

Fei Gao publications per year

The chart shows the history of publications by Fei Gao between 1992 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Fei Gao published across 34 years, from 1992 to 2025, averaging 22.1 papers a year. Output peaked at 65 publications in 2025. 128 of the 752 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1992 to 2025. Vertical axis: number of publications, 0 to 65. Peak 65 publications in 2025. 1992: 1 publication 1993: 4 publications 1994: 1 publication 1995: 4 publications 1996: 4 publications 1997: 6 publications 1998: 8 publications 1999: 3 publications 2000: 8 publications 2001: 11 publications 2002: 7 publications 2003: 10 publications 2004: 13 publications 2005: 9 publications 2006: 22 publications 2007: 27 publications 2008: 29 publications 2009: 28 publications 2010: 30 publications 2011: 27 publications 2012: 32 publications 2013: 33 publications 2014: 27 publications 2015: 19 publications 2016: 17 publications 2017: 24 publications 2018: 28 publications 2019: 25 publications 2020: 21 publications 2021: 26 publications 2022: 62 publications 2023: 58 publications 2024: 63 publications 2025: 65 publications
1992 2025

752 publications in total across all disciplines

View publications per year as a table
Fei Gao: publications per year, 1992 to 2025
Year Publications
1992 1
1993 4
1994 1
1995 4
1996 4
1997 6
1998 8
1999 3
2000 8
2001 11
2002 7
2003 10
2004 13
2005 9
2006 22
2007 27
2008 29
2009 28
2010 30
2011 27
2012 32
2013 33
2014 27
2015 19
2016 17
2017 24
2018 28
2019 25
2020 21
2021 26
2022 62
2023 58
2024 63
2025 65
Total 752
Download as CSV

Fei Gao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Fei Gao sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 470–489 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 486 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212 486
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Fei Gao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Fei Gao sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 70–71 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 71 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378 71
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Fei Gao is affiliated with the University of Michigan-Ann Arbor in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a significant focus on subfields such as Materials Chemistry, Mechanical Engineering, Electrical and Electronic Engineering, Biomedical Engineering, and Aerospace Engineering.

The scientist's work covers a range of topics including Nuclear Materials and Properties, Fusion materials and technologies, Ion-surface interactions and analysis, Robotic Path Planning Algorithms, Nuclear materials and radiation effects, Advancements in Battery Materials, and High Temperature Alloys and Creep.

Fei Gao has published extensively, with recurrent contributions appearing in several key venues. The most frequent publication platforms include arXiv (Cornell University), SSRN Electronic Journal, Journal of Nuclear Materials, Acta Materialia, and OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information).

Among recent papers are the following notable publications:

  • "Enhanced radiation tolerance of the Ni-Co-Cr-Fe high-entropy alloy as revealed from primary damage" (2020, Acta Materialia)
  • "A review of the role and mechanism of surfactants in the morphology control of metal nanoparticles" (2021, Nanoscale)
  • "Enhanced extraction of essential oil from Cinnamomum cassia bark by ultrasound assisted hydrodistillation" (2020, Chinese Journal of Chemical Engineering)
  • "Coaxial Scale-Up Printing of Diameter-Tunable Biohybrid Hydrogel Microtubes with High Strength, Perfusability, and Endothelialization" (2020, Advanced Functional Materials)
  • "Enhancing the radiation tolerance of high-entropy alloys via solute-promoted chemical heterogeneities" (2022, Acta Materialia)

Frequent coauthors collaborating with Fei Gao include Huiqiu Deng, Wangyu Hu, Chongmin Wang, Guang-Hong Lu, and Jie Xiao. These collaborations have resulted in multiple joint publications across various topics and venues.

Best Publications

  • Enhancing radiation tolerance by controlling defect mobility and migration pathways in multicomponent single-phase alloys

    Chenyang Lu;Liangliang Niu;Nanjun Chen;Ke Jin

  • Lewis acid-base interactions between polysulfides and metal organic framework in lithium sulfur batteries

    Jianming Zheng;Jian Tian;Dangxin Wu;Meng Gu

  • The primary damage state in fcc, bcc and hcp metals as seen in molecular dynamics simulations

    D.J. Bacon;F. Gao;Yu.N. Osetsky

  • Tensile strain switched ferromagnetism in layered NbS2 and NbSe2.

    Yungang Zhou;Zhiguo Wang;Ping Yang;Xiaotao Zu

  • Probing grain boundary sink strength at the nanoscale: Energetics and length scales of vacancy and interstitial absorption by grain boundaries in α -Fe

    Mark A. Tschopp;K. N. Solanki;Fei Gao;Xin Sun

  • In situ TEM investigation of congruent phase transition and structural evolution of nanostructured silicon/carbon anode for lithium ion batteries.

    Chong Min Wang;Xiaolin Li;Zhiguo Wang;Wu Xu

  • Evolution of Lattice Structure and Chemical Composition of the Surface Reconstruction Layer in Li1.2Ni0.2Mn0.6O2 Cathode Material for Lithium Ion Batteries

    Pengfei Yan;Anmin Nie;Jianming Zheng;Yungang Zhou

  • Radiation-induced segregation on defect clusters in single-phase concentrated solid-solution alloys

    Chenyang Lu;Taini Yang;Ke Jin;Ning Gao

  • Conflicting roles of nickel in controlling cathode performance in lithium ion batteries.

    Meng Gu;Ilias Belharouak;Arda Genc;Zhiguo Wang

  • Atomic scale simulation of defect production in irradiated 3C-SiC

    R. Devanathan;W. J. Weber;F. Gao

  • Computer simulation of defect production by displacement cascades in metals

    D.J. Bacon;A.F. Calder;F. Gao;V.G. Kapinos

  • Enhanced radiation tolerance of the Ni-Co-Cr-Fe high-entropy alloy as revealed from primary damage

    Yeping Lin;Tengfei Yang;Lin Lang;Chang Shan

  • Analytic modified embedded atom potentials for HCP metals

    Wangyu Hu;Wangyu Hu;Bangwei Zhang;Baiyun Huang;Fei Gao;Fei Gao

  • Signal variance in gamma-ray detectors-A review

    Ram Devanathan;Louis R. Corrales;Fei Gao;William J. Weber

  • Cascade overlap and amorphization in 3C-SiC: Defect accumulation, topological features, and disordering

    Fei Gao;William J. Weber

  • Electronic Origin for the Phase Transition from Amorphous LixSi to Crystalline Li15Si4

    Meng Gu;Zhiguo Wang;Justin G. Connell;Daniel E. Perea

  • Point-defect and threshold displacement energies in Ni3Al I. Point-defect properties

    F. Gao;D. J. Bacon;G. J. Ackland

  • Reaction heterogeneity in practical high-energy lithium–sulfur pouch cells

    Lili Shi;Seong-Min Bak;Zulipiya Shadike;Chengqi Wang

  • Properties of Helium Defects in BCC and FCC Metals Investigated with Density Functional Theory

    Xiaotao T. Zu;Li Yang;Fei Gao;SM Peng

  • Shockwave generates dislocation loops in bcc iron

    Qing Peng;Fanjiang Meng;Yizhong Yang;Chenyang Lu

  • Defect production due to displacement cascades in metals as revealed by computer simulation

    D.J. Bacon;A.F. Calder;F. Gao

  • Electronic structures and magnetic properties of MoS2 nanostructures: Atomic defects, nanoholes, nanodots and antidots

    Yungang Zhou;Ping Yang;Haoyue Zu;Fei Gao

Frequent Co-Authors

William J. Weber
William J. Weber University of Tennessee at Knoxville
Xiaotao Zu
Xiaotao Zu University of Electronic Science and Technology of China
Zhiguo Wang
Zhiguo Wang University of Electronic Science and Technology of China
Wangyu Hu
Wangyu Hu Hunan University
David Bacon
David Bacon University of Portsmouth
Yanwen Zhang
Yanwen Zhang Oak Ridge National Laboratory
Mohammad A. Khaleel
Mohammad A. Khaleel Oak Ridge National Laboratory
Sebastien N. Kerisit
Sebastien N. Kerisit Pacific Northwest National Laboratory
Chongmin Wang
Chongmin Wang Pacific Northwest National Laboratory
Shenyang Y. Hu
Shenyang Y. Hu Pacific Northwest National Laboratory

External Links

Personal website of Fei Gao Google Scholar page

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Best Scientists Citing Fei Gao

William J. Weber

William J. Weber

University of Tennessee at Knoxville

Publications: 241

Yanwen Zhang

Yanwen Zhang

Oak Ridge National Laboratory

Publications: 194

Brian D. Wirth

Brian D. Wirth

University of Tennessee at Knoxville

Publications: 69

Kai Nordlund

Kai Nordlund

University of Helsinki

Publications: 54

David Bacon

David Bacon

University of Portsmouth

Publications: 54

Chongmin Wang

Chongmin Wang

Pacific Northwest National Laboratory

Publications: 51

Wangyu Hu

Wangyu Hu

Hunan University

Publications: 51

Hongbin Bei

Hongbin Bei

Zhejiang University

Publications: 44

Charlotte Becquart

Charlotte Becquart

University of Lille

Publications: 41

Roger E. Stoller

Roger E. Stoller

Oak Ridge National Laboratory

Publications: 38

Ke Jin

Ke Jin

Beijing Institute of Technology

Publications: 32

Yu.N. Osetsky

Yu.N. Osetsky

Oak Ridge National Laboratory

Publications: 32

Xiaotao Zu

Xiaotao Zu

University of Electronic Science and Technology of China

Publications: 29

Ji-Guang Zhang

Ji-Guang Zhang

Pacific Northwest National Laboratory

Publications: 28

Zhiguo Wang

Zhiguo Wang

University of Electronic Science and Technology of China

Publications: 28

Steven J. Zinkle

Steven J. Zinkle

University of Tennessee at Knoxville

Publications: 28

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Yann Garcia

Université Catholique de Louvain

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Giovanni Serra

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Jami F. Young

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James R. Graham

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Daniel M. Blumberger

Daniel M. Blumberger

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William R. Cotton

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Mark DeMaria

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Oded Abramsky

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Iain A. Drummond

Iain A. Drummond

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Alessandro Montanari

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