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D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Engineering and Technology 32 9524 216 84 5549

Hisashi Ohtani publications per year

The chart shows the history of publications by Hisashi Ohtani between 1992 and 2012, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hisashi Ohtani published across 21 years, from 1992 to 2012, averaging 4.2 papers a year. Output peaked at 15 publications in 1998. 3 of the 89 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1992 to 2012. Vertical axis: number of publications, 0 to 15. Peak 15 publications in 1998. 1992: 1 publication 1993: 0 publications 1994: 10 publications 1995: 4 publications 1996: 1 publication 1997: 11 publications 1998: 15 publications 1999: 5 publications 2000: 2 publications 2001: 5 publications 2002: 6 publications 2003: 4 publications 2004: 7 publications 2005: 2 publications 2006: 2 publications 2007: 2 publications 2008: 5 publications 2009: 2 publications 2010: 2 publications 2011: 1 publication 2012: 2 publications
1992 2012

89 publications in total across all disciplines

View publications per year as a table
Hisashi Ohtani: publications per year, 1992 to 2012
Year Publications
1992 1
1993 0
1994 10
1995 4
1996 1
1997 11
1998 15
1999 5
2000 2
2001 5
2002 6
2003 4
2004 7
2005 2
2006 2
2007 2
2008 5
2009 2
2010 2
2011 1
2012 2
Total 89
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Hisashi Ohtani publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Hisashi Ohtani sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 78–87 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 84 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190 84
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
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Hisashi Ohtani D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Hisashi Ohtani sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 32 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 32 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129 32
33 189
34 200
35 262
36 311
37 312
38 350
39 385
40 348
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
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Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Electrical engineering

Hisashi Ohtani mostly deals with Semiconductor device, Amorphous silicon, Optoelectronics, Crystallization and Semiconductor. His research integrates issues of Crystal and Hybrid silicon laser in his study of Semiconductor device. In his research on the topic of Crystal, Thin film is strongly related with Single crystal.

His work in Amorphous silicon addresses issues such as Silicon, which are connected to fields such as Thin-film transistor. His work carried out in the field of Optoelectronics brings together such families of science as Threshold voltage and Electrical engineering. His Crystal growth research focuses on subjects like Crystallinity, which are linked to Electronic engineering.

His most cited work include:

  • Semiconductor device and manufacturing method therefor (324 citations)
  • Semiconductor device having an SOI structure and manufacturing method therefor (240 citations)
  • Semiconductor thin film and semiconductor device (229 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Semiconductor device, Semiconductor, Thin-film transistor and Amorphous silicon. His biological study spans a wide range of topics, including Layer, Thin film, Electronic engineering and Electrical engineering. The Semiconductor device study combines topics in areas such as Active layer, Substrate, Crystal and Laser.

Hisashi Ohtani has researched Semiconductor in several fields, including Crystallinity and Single crystal. His Thin-film transistor study combines topics from a wide range of disciplines, such as Quartz substrate, Annealing, Doping and Amorphous semiconductors. His research in Amorphous silicon intersects with topics in Crystallization and Crystalline silicon.

He most often published in these fields:

  • Optoelectronics (62.99%)
  • Semiconductor device (49.61%)
  • Semiconductor (37.01%)

What were the highlights of his more recent work (between 2004-2012)?

  • Optoelectronics (62.99%)
  • Semiconductor device (49.61%)
  • Thin film (24.41%)

In recent papers he was focusing on the following fields of study:

Hisashi Ohtani spends much of his time researching Optoelectronics, Semiconductor device, Thin film, Electrical engineering and Active matrix. His Optoelectronics research is mostly focused on the topic Semiconductor. Hisashi Ohtani combines subjects such as Solid-state laser, Vertical-cavity surface-emitting laser, Selective laser sintering and Nanocrystalline silicon with his study of Semiconductor device.

The study incorporates disciplines such as Crystallization, Crystalline silicon and Dielectric in addition to Thin film. His work in Electrical engineering covers topics such as Thin-film transistor which are related to areas like Signal, Waveform, Line and Display device. His Electronic engineering research is multidisciplinary, incorporating elements of Crystal structure and Silicon.

Between 2004 and 2012, his most popular works were:

  • Semiconductor device and manufacturing method therefor (324 citations)
  • Process for fabricating semiconductor device (107 citations)
  • Semiconductor fabricating apparatus (27 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Silicon

Optoelectronics, Semiconductor device, Electronic engineering, Impurity and Semiconductor are his primary areas of study. His Optoelectronics study integrates concerns from other disciplines, such as Crystallization and Laser. His studies deal with areas such as Amorphous silicon, Nanocrystalline silicon, Monocrystalline silicon, Heat treating and Hybrid silicon laser as well as Semiconductor device.

His studies in Electronic engineering integrate themes in fields like Buried oxide, Oxide, Single crystal and Active layer. His Impurity study spans across into fields like Depletion region and Thin film. Hisashi Ohtani has included themes like Beam, Oscillation, Distributed feedback laser, Laser crystallization and Substrate in his Semiconductor study.

Best Publications

  • Semiconductor device and manufacturing method therefor

    Shunpei Yamazaki;Hisashi Ohtani;Toshiji Hamatani

  • Semiconductor thin film and semiconductor device

    Shunpei Yamazaki;Hisashi Ohtani;Toru Mitsuki;Akiharu Miyanaga

  • Electro-optical device and semiconductor circuit

    Hisashi Ohtani;Jun Koyama;Shunpei Yamazaki

  • Active Matry Display

    Hisashi Ohtani;Akiharu Miyanaga;Takeshi Fukunaga;Hongyong Zhang

  • Method for manufacturing a semiconductor device using a catalyst

    Hisashi Ohtani;Akiharu Miyanaga;Hongyong Zhang;Naoaki Yamaguchi

  • Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region

    Naoto Kusumoto;Yasuhiko Takemura;Hisashi Ohtani

  • Active matrix display apparatus and fabricating method thereof

    Akiharu Miyanaga;Hisashi Ohtani;Yasuhiko Takemura

  • Method for manufacturing a thin film transistor using catalyst elements to promote crystallization

    Hisashi Ohtani;Hiroki Adachi;Akiharu Miyanaga;Toru Takayama

  • Process for fabricating semiconductor device

    Hisashi Ohtani;Takeshi Fukunaga;Akiharu Miyanaga

  • Method of preparing a semiconductor having a controlled crystal orientation

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Thin film transistor having grain boundaries with segregated oxygen and halogen elements

    Shunpei Yamazaki;Satoshi Teramoto;Jun Koyama;Yasushi Ogata

  • Semiconductor device having doped polycrystalline layer

    Akiharu Miyanaga;Hisashi Ohtani;Satoshi Teramoto

  • CMOS semiconductor device and apparatus using the same

    Yamazaki Shunpei;Ohtani Hisashi;Fukunaga Takeshi

  • Method of crystallizing a silicon film

    Hisashi Ohtani;Yasuhiko Takemura;Akiharu Miyanaga;Shunpei Yamazaki

  • Semiconductor device structure

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Semiconductor device and method for its preparation

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Active matrix type display device and method of manufacturing the same

    Hisashi Ohtani;Yasushi Ogata

  • Semiconductor active matrix circuit

    Jun Koyama;Yasuhiko Takemura;Masahiko Hayakawa;Shunpei Yamazaki

  • Active matrix display device having wiring layers which are connected over multiple contact parts

    Jun Koyama;Hisashi Ohtani;Yasushi Ogata;Shunpei Yamazaki

  • Laser processing method

    Satoshi Teramoto;Hisashi Ohtani;Akiharu Miyanaga;Toshiji Hamatani

Frequent Co-Authors

Shunpei Yamazaki
Shunpei Yamazaki Semiconductor Energy Laboratory (Japan)
Jun Koyama
Jun Koyama Semiconductor Energy Laboratory (Japan)
Hongyong Zhang
Hongyong Zhang Tokyo Institute of Technology

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