World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
32
Citations
5549
World Ranking
9524
National Ranking
216

Hisashi Ohtani publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Hisashi Ohtani sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 84 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Hisashi Ohtani D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Hisashi Ohtani sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 32 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Electrical engineering

Hisashi Ohtani mostly deals with Semiconductor device, Amorphous silicon, Optoelectronics, Crystallization and Semiconductor. His research integrates issues of Crystal and Hybrid silicon laser in his study of Semiconductor device. In his research on the topic of Crystal, Thin film is strongly related with Single crystal.

His work in Amorphous silicon addresses issues such as Silicon, which are connected to fields such as Thin-film transistor. His work carried out in the field of Optoelectronics brings together such families of science as Threshold voltage and Electrical engineering. His Crystal growth research focuses on subjects like Crystallinity, which are linked to Electronic engineering.

His most cited work include:

  • Semiconductor device and manufacturing method therefor (324 citations)
  • Semiconductor device having an SOI structure and manufacturing method therefor (240 citations)
  • Semiconductor thin film and semiconductor device (229 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Semiconductor device, Semiconductor, Thin-film transistor and Amorphous silicon. His biological study spans a wide range of topics, including Layer, Thin film, Electronic engineering and Electrical engineering. The Semiconductor device study combines topics in areas such as Active layer, Substrate, Crystal and Laser.

Hisashi Ohtani has researched Semiconductor in several fields, including Crystallinity and Single crystal. His Thin-film transistor study combines topics from a wide range of disciplines, such as Quartz substrate, Annealing, Doping and Amorphous semiconductors. His research in Amorphous silicon intersects with topics in Crystallization and Crystalline silicon.

He most often published in these fields:

  • Optoelectronics (62.99%)
  • Semiconductor device (49.61%)
  • Semiconductor (37.01%)

What were the highlights of his more recent work (between 2004-2012)?

  • Optoelectronics (62.99%)
  • Semiconductor device (49.61%)
  • Thin film (24.41%)

In recent papers he was focusing on the following fields of study:

Hisashi Ohtani spends much of his time researching Optoelectronics, Semiconductor device, Thin film, Electrical engineering and Active matrix. His Optoelectronics research is mostly focused on the topic Semiconductor. Hisashi Ohtani combines subjects such as Solid-state laser, Vertical-cavity surface-emitting laser, Selective laser sintering and Nanocrystalline silicon with his study of Semiconductor device.

The study incorporates disciplines such as Crystallization, Crystalline silicon and Dielectric in addition to Thin film. His work in Electrical engineering covers topics such as Thin-film transistor which are related to areas like Signal, Waveform, Line and Display device. His Electronic engineering research is multidisciplinary, incorporating elements of Crystal structure and Silicon.

Between 2004 and 2012, his most popular works were:

  • Semiconductor device and manufacturing method therefor (324 citations)
  • Process for fabricating semiconductor device (107 citations)
  • Semiconductor fabricating apparatus (27 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Silicon

Optoelectronics, Semiconductor device, Electronic engineering, Impurity and Semiconductor are his primary areas of study. His Optoelectronics study integrates concerns from other disciplines, such as Crystallization and Laser. His studies deal with areas such as Amorphous silicon, Nanocrystalline silicon, Monocrystalline silicon, Heat treating and Hybrid silicon laser as well as Semiconductor device.

His studies in Electronic engineering integrate themes in fields like Buried oxide, Oxide, Single crystal and Active layer. His Impurity study spans across into fields like Depletion region and Thin film. Hisashi Ohtani has included themes like Beam, Oscillation, Distributed feedback laser, Laser crystallization and Substrate in his Semiconductor study.

Best Publications

  • Semiconductor device and manufacturing method therefor

    Shunpei Yamazaki;Hisashi Ohtani;Toshiji Hamatani

  • Semiconductor thin film and semiconductor device

    Shunpei Yamazaki;Hisashi Ohtani;Toru Mitsuki;Akiharu Miyanaga

  • Electro-optical device and semiconductor circuit

    Hisashi Ohtani;Jun Koyama;Shunpei Yamazaki

  • Active Matry Display

    Hisashi Ohtani;Akiharu Miyanaga;Takeshi Fukunaga;Hongyong Zhang

  • Method for manufacturing a semiconductor device using a catalyst

    Hisashi Ohtani;Akiharu Miyanaga;Hongyong Zhang;Naoaki Yamaguchi

  • Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region

    Naoto Kusumoto;Yasuhiko Takemura;Hisashi Ohtani

  • Active matrix display apparatus and fabricating method thereof

    Akiharu Miyanaga;Hisashi Ohtani;Yasuhiko Takemura

  • Method for manufacturing a thin film transistor using catalyst elements to promote crystallization

    Hisashi Ohtani;Hiroki Adachi;Akiharu Miyanaga;Toru Takayama

  • Process for fabricating semiconductor device

    Hisashi Ohtani;Takeshi Fukunaga;Akiharu Miyanaga

  • Method of preparing a semiconductor having a controlled crystal orientation

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Thin film transistor having grain boundaries with segregated oxygen and halogen elements

    Shunpei Yamazaki;Satoshi Teramoto;Jun Koyama;Yasushi Ogata

  • Semiconductor device having doped polycrystalline layer

    Akiharu Miyanaga;Hisashi Ohtani;Satoshi Teramoto

  • CMOS semiconductor device and apparatus using the same

    Yamazaki Shunpei;Ohtani Hisashi;Fukunaga Takeshi

  • Method of crystallizing a silicon film

    Hisashi Ohtani;Yasuhiko Takemura;Akiharu Miyanaga;Shunpei Yamazaki

  • Semiconductor device structure

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Semiconductor device and method for its preparation

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Active matrix type display device and method of manufacturing the same

    Hisashi Ohtani;Yasushi Ogata

  • Semiconductor active matrix circuit

    Jun Koyama;Yasuhiko Takemura;Masahiko Hayakawa;Shunpei Yamazaki

  • Active matrix display device having wiring layers which are connected over multiple contact parts

    Jun Koyama;Hisashi Ohtani;Yasushi Ogata;Shunpei Yamazaki

  • Laser processing method

    Satoshi Teramoto;Hisashi Ohtani;Akiharu Miyanaga;Toshiji Hamatani

Frequent Co-Authors

Shunpei Yamazaki
Shunpei Yamazaki Semiconductor Energy Laboratory (Japan)
Jun Koyama
Jun Koyama Semiconductor Energy Laboratory (Japan)
Hongyong Zhang
Hongyong Zhang Tokyo Institute of Technology

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