D-Index & Metrics Best Publications
Masashi Shiraishi

Masashi Shiraishi

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 45 Citations 8,684 254 World Ranking 8432 National Ranking 550

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of study are Condensed matter physics, Carbon nanotube, Nanotechnology, Silicon and Magnetoresistance. Masashi Shiraishi interconnects Spin Hall effect and Spin polarization in the investigation of issues within Condensed matter physics. His Carbon nanotube research is multidisciplinary, incorporating elements of Desorption and Gas evolution reaction.

His Nanotechnology research includes themes of Field-effect transistor, Carbon nanotube field-effect transistor, Hydrogen molecule and Electronics. In his work, Flow is strongly intertwined with Transistor, which is a subfield of Silicon. His biological study deals with issues like Magnetic anisotropy, which deal with fields such as Physicist and Symmetry.

His most cited work include:

  • Large voltage-induced magnetic anisotropy change in a few atomic layers of iron (939 citations)
  • Stable and controlled amphoteric doping by encapsulation of organic molecules inside carbon nanotubes. (419 citations)
  • Work function of carbon nanotubes (380 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Condensed matter physics, Spin-½, Spintronics, Spin polarization and Spin Hall effect. His Condensed matter physics research is multidisciplinary, relying on both Magnetoresistance, Silicon and Spin pumping. His Spin-½ study also includes fields such as

  • Voltage which is related to area like Spin valve and Electric field,
  • MOSFET and related Gate voltage.

His study focuses on the intersection of Spintronics and fields such as Optoelectronics with connections in the field of Nanotechnology, Carbon and Carbon nanotube field-effect transistor. His Spin polarization research incorporates elements of Spin diffusion and Spin wave. The study incorporates disciplines such as Magnetization and Electrode in addition to Ferromagnetism.

He most often published in these fields:

  • Condensed matter physics (73.68%)
  • Spin-½ (22.37%)
  • Spintronics (21.05%)

What were the highlights of his more recent work (between 2018-2021)?

  • Condensed matter physics (73.68%)
  • Ferromagnetism (16.78%)
  • Spin-½ (22.37%)

In recent papers he was focusing on the following fields of study:

Masashi Shiraishi focuses on Condensed matter physics, Ferromagnetism, Spin-½, Spin and Spintronics. His biological study spans a wide range of topics, including Spin Hall effect, Spin valve, Ferromagnetic resonance, Magnetization and Silicon. His Ferromagnetism research integrates issues from Spin diffusion, Magnetoresistance, Layer, Electrode and Signal.

His study in Spin-½ is interdisciplinary in nature, drawing from both Spin injection and Voltage. The Spin study combines topics in areas such as Doping and Metal. His Spintronics study combines topics from a wide range of disciplines, such as Monolayer and Optoelectronics, Semiconductor.

Between 2018 and 2021, his most popular works were:

  • Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve (11 citations)
  • Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts. (5 citations)
  • Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature (5 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Masashi Shiraishi mainly investigates Condensed matter physics, Spin-½, Ferromagnetism, Ferromagnetic resonance and Spintronics. Masashi Shiraishi combines topics linked to Permalloy with his work on Condensed matter physics. His work deals with themes such as Magnetostatics, Biasing, Rectification and Magnetization, which intersect with Spin-½.

His research integrates issues of Silicon based, Silicon, Insulator, Magnetoresistance and Degenerate energy levels in his study of Ferromagnetism. Within one scientific family, Masashi Shiraishi focuses on topics pertaining to Spin polarization under Silicon, and may sometimes address concerns connected to Communication channel. His Spintronics research also works with subjects such as

  • Semiconductor which is related to area like Electromotive force, Detector, Spin Hall effect and Spin pumping,
  • Spin which is related to area like Voltage.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

T. Maruyama;Y. Shiota;T. Nozaki;K. Ohta.
Nature Nanotechnology (2009)

1313 Citations

Work function of carbon nanotubes

Masashi Shiraishi;Masafumi Ata.
Carbon (2001)

605 Citations

Stable and controlled amphoteric doping by encapsulation of organic molecules inside carbon nanotubes.

Taishi Takenobu;Takumi Takano;Masashi Shiraishi;Yousuke Murakami.
Nature Materials (2003)

580 Citations

Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

T. Nozaki;Y. Shiota;M. Shiraishi;T. Shinjo.
Applied Physics Letters (2010)

285 Citations

Spin injection into a graphene thin film at room temperature

Megumi Ohishi;Masashi Shiraishi;Ryo Nouchi;Takayuki Nozaki.
Japanese Journal of Applied Physics (2007)

259 Citations

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

Toshio Suzuki;Tomoyuki Sasaki;Tohru Oikawa;Masashi Shiraishi.
Applied Physics Express (2011)

256 Citations

Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers

Yoichi Shiota;Takuto Maruyama;Takayuki Nozaki;Takayuki Nozaki;Teruya Shinjo.
Applied Physics Express (2009)

251 Citations

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

Toshio Suzuki;Tomoyuki Sasaki;Tohru Oikawa;Masashi Shiraishi.
arXiv: Materials Science (2011)

217 Citations

Spin-pump-induced spin transport in p-type Si at room temperature.

Eiji Shikoh;Kazuya Ando;Kazuki Kubo;Eiji Saitoh.
Physical Review Letters (2013)

189 Citations

Electrical Detection of the Spin Polarization Due to Charge Flow in the Surface State of the Topological Insulator Bi1.5Sb0.5Te1.7Se1.3

Yuichiro Ando;Takahiro Hamasaki;Takayuki Kurokawa;Kouki Ichiba.
Nano Letters (2014)

168 Citations

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