Fabio Pellizzer focuses on Phase-change memory, Electronic engineering, Chalcogenide, Non-volatile memory and Amorphous solid. His Phase-change memory research integrates issues from Reset, Phase-change material, State and Contact area. His Electronic engineering research includes elements of Semiconductor memory, Memory refresh, Condensed matter physics and Reliability.
His Chalcogenide research is within the category of Optoelectronics. His Non-volatile memory research is multidisciplinary, incorporating perspectives in Crystal growth, Sense amplifier, Bipolar junction transistor, Integrated circuit and CMOS. The Amorphous solid study combines topics in areas such as Current distribution, Semiconductor materials, Pulse, Memory cards and Band gap.
His scientific interests lie mostly in Phase-change memory, Optoelectronics, Electronic engineering, Electrical engineering and Memory cell. His biological study spans a wide range of topics, including Phase-change material and Non-volatile memory. His research in Non-volatile memory intersects with topics in CMOS and Integrated circuit.
His study in the field of Dielectric also crosses realms of Conductivity. Fabio Pellizzer combines subjects such as Sense amplifier, Amorphous solid, Chalcogenide, Reset and Transient with his study of Electronic engineering. Fabio Pellizzer interconnects Logic state, State and Memory array, Computer hardware in the investigation of issues within Memory cell.
His primary areas of investigation include Memory cell, Optoelectronics, Memory array, Electrical engineering and Voltage. His Optoelectronics study incorporates themes from Electrical conductor, Conductive materials, Phase-change material and Nanotechnology. In his study, Connection is inextricably linked to Computer hardware, which falls within the broad field of Electrical engineering.
His Threshold voltage research incorporates elements of Node, Voltage source and Electronic engineering. His Phase-change memory study, which is part of a larger body of work in Composite material, is frequently linked to Variable, bridging the gap between disciplines. His studies deal with areas such as Crystallinity and Signal as well as Phase-change memory.
His main research concerns Electrical engineering, Memory cell, Voltage, Computer hardware and Polarity. His research integrates issues of Thermal isolation, Phase-change memory and Topology in his study of Electrical engineering. His studies in Memory cell integrate themes in fields like Conductive materials, Engineering drawing and Spark plug.
The study incorporates disciplines such as Layer, Logic state and Structural engineering, Deck in addition to Polarity. His research investigates the link between Electrical conductor and topics such as Plane that cross with problems in Cylinder, Dielectric, 3d memory and Optoelectronics. His Threshold voltage study combines topics in areas such as Sense amplifier, State and Reading.
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Electronic switching in phase-change memories
A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer.
IEEE Transactions on Electron Devices (2004)
Electronic switching in phase-change memories
A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer.
IEEE Transactions on Electron Devices (2004)
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti.
symposium on vlsi technology (2004)
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti.
symposium on vlsi technology (2004)
Reliability study of phase-change nonvolatile memories
A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli.
IEEE Transactions on Device and Materials Reliability (2004)
Reliability study of phase-change nonvolatile memories
A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli.
IEEE Transactions on Device and Materials Reliability (2004)
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev.
IEEE Transactions on Electron Devices (2004)
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev.
IEEE Transactions on Electron Devices (2004)
A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage
Ferdinando Bedeschi;Rich Fackenthal;Claudio Resta;Enzo Michele Donze.
international solid-state circuits conference (2009)
A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage
Ferdinando Bedeschi;Rich Fackenthal;Claudio Resta;Enzo Michele Donze.
international solid-state circuits conference (2009)
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