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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
7686
World Ranking
5259
National Ranking
1813

Overview

Fabio Pellizzer is affiliated with Micron in the United States and contributes to the fields of Engineering and Materials Science. Their research spans several subfields, including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Food Science, and Electronic, Optical and Magnetic Materials.

The scientist's work prominently focuses on topics related to Phase-change materials and chalcogenides, Chalcogenide Semiconductor Thin Films, Nonlinear Optical Materials Studies, Botanical Research and Applications, Liquid Crystal Research Advancements, Mineralogy and Gemology Studies, and Advanced Memory and Neural Computing.

Fabio Pellizzer has published in various venues, with multiple contributions to arXiv (Cornell University) and Nature Communications. Four of their recent papers include:

  • The potential of chemical bonding to design crystallization and vitrification kinetics (2021, Nature Communications)
  • Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding (2021, arXiv)
  • Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding (2021, arXiv)
  • Microscopic model of the operation of the Single-chalcogenide X-point Memory (2025, arXiv)

Frequent collaborators of Pellizzer's include Paolo Fantini, Andrea Redaelli, E. Varesi, Christoph Persch, and Maximilian J. Müller.

  • Paolo Fantini
  • Andrea Redaelli
  • E. Varesi
  • Christoph Persch
  • Maximilian J. Müller

Best Publications

  • Electronic switching in phase-change memories

    A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer

  • Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

    F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti

  • Reliability study of phase-change nonvolatile memories

    A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli

  • Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

    A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev

  • A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage

    Ferdinando Bedeschi;Rich Fackenthal;Claudio Resta;Enzo Michele Donze

  • Electronic switching effect and phase-change transition in chalcogenide materials

    A. Redaelli;A. Pirovano;F. Pellizzer;A.L. Lacaita

  • Electrothermal and phase-change dynamics in chalcogenide-based memories

    A.L. Lacaita;A. Redaelli;D. Ielmini;F. Pellizzer

  • Scaling analysis of phase-change memory technology

    A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer

  • 4-Mb MOSFET-selected phase-change memory experimental chip

    F. Bedeschi;R. Bez;C. Boffino;E. Bonizzoni

  • An 8Mb demonstrator for high-density 1.8V Phase-Change Memories

    F. Bedeschi;C. Resta;O. Khouri;E. Buda

  • Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof

    Giulio Casagrande;Roberto Bez;Fabio Pellizzer

  • A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

    F. Pellizzer;A. Benvenuti;B. Gleixner;Y. Kim

  • A Multi-Level-Cell Bipolar-Selected Phase-Change Memory

    F. Bedeschi;R. Fackenthal;C. Resta;E.M. Donze

  • 4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip

    F. Bedeschi;R. Bez;C. Boffino;E. Bonizzoni

  • Analysis of phase distribution in phase-change nonvolatile memories

    D. Ielmini;A.L. Lacaita;A. Pirovano;F. Pellizzer

  • A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

    M. Boniardi;A. Redaelli;A. Pirovano;I. Tortorelli

  • Minute contact area in semiconductor device, high performance phase change memory cell and method of manufacturing the memory cell

    Roberto Bez;Fabio Pellizzer;Caterina Riva;Romina Zonca

  • Multilevel programming of phase change memory cells

    George Gordon;Stephen Hudgens;Fabio Pellizzer;Agostino Pirovano

  • Phase change memory cell and manufacturing method thereof using minitrenches

    Roberto Bez;Fabio Pellizzer;Marina Tosi;Romina Zonca

  • Architecture of a phase-change nonvolatile memory array

    Osama Khouri;Ferdinando Bedeschi;Giorgio Bosisio;Fabio Pellizzer

Frequent Co-Authors

Roberto Bez
Roberto Bez Micron (United States)
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia
Matthias Wuttig
Matthias Wuttig RWTH Aachen University
Hajime Tanaka
Hajime Tanaka University of Tokyo

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