D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 34 Citations 7,127 152 World Ranking 3822 National Ranking 1470

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Semiconductor
  • Integrated circuit

Fabio Pellizzer focuses on Phase-change memory, Electronic engineering, Chalcogenide, Non-volatile memory and Amorphous solid. His Phase-change memory research integrates issues from Reset, Phase-change material, State and Contact area. His Electronic engineering research includes elements of Semiconductor memory, Memory refresh, Condensed matter physics and Reliability.

His Chalcogenide research is within the category of Optoelectronics. His Non-volatile memory research is multidisciplinary, incorporating perspectives in Crystal growth, Sense amplifier, Bipolar junction transistor, Integrated circuit and CMOS. The Amorphous solid study combines topics in areas such as Current distribution, Semiconductor materials, Pulse, Memory cards and Band gap.

His most cited work include:

  • Electronic switching in phase-change memories (496 citations)
  • Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications (389 citations)
  • Reliability study of phase-change nonvolatile memories (361 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Phase-change memory, Optoelectronics, Electronic engineering, Electrical engineering and Memory cell. His biological study spans a wide range of topics, including Phase-change material and Non-volatile memory. His research in Non-volatile memory intersects with topics in CMOS and Integrated circuit.

His study in the field of Dielectric also crosses realms of Conductivity. Fabio Pellizzer combines subjects such as Sense amplifier, Amorphous solid, Chalcogenide, Reset and Transient with his study of Electronic engineering. Fabio Pellizzer interconnects Logic state, State and Memory array, Computer hardware in the investigation of issues within Memory cell.

He most often published in these fields:

  • Phase-change memory (44.91%)
  • Optoelectronics (33.80%)
  • Electronic engineering (28.70%)

What were the highlights of his more recent work (between 2014-2021)?

  • Memory cell (18.98%)
  • Optoelectronics (33.80%)
  • Memory array (10.19%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Memory cell, Optoelectronics, Memory array, Electrical engineering and Voltage. His Optoelectronics study incorporates themes from Electrical conductor, Conductive materials, Phase-change material and Nanotechnology. In his study, Connection is inextricably linked to Computer hardware, which falls within the broad field of Electrical engineering.

His Threshold voltage research incorporates elements of Node, Voltage source and Electronic engineering. His Phase-change memory study, which is part of a larger body of work in Composite material, is frequently linked to Variable, bridging the gap between disciplines. His studies deal with areas such as Crystallinity and Signal as well as Phase-change memory.

Between 2014 and 2021, his most popular works were:

  • Apparatuses including multi-level memory cells and methods of operation of same (18 citations)
  • Connections for memory electrode lines (18 citations)
  • Apparatuses and methods of reading memory cells (15 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Semiconductor
  • Integrated circuit

His main research concerns Electrical engineering, Memory cell, Voltage, Computer hardware and Polarity. His research integrates issues of Thermal isolation, Phase-change memory and Topology in his study of Electrical engineering. His studies in Memory cell integrate themes in fields like Conductive materials, Engineering drawing and Spark plug.

The study incorporates disciplines such as Layer, Logic state and Structural engineering, Deck in addition to Polarity. His research investigates the link between Electrical conductor and topics such as Plane that cross with problems in Cylinder, Dielectric, 3d memory and Optoelectronics. His Threshold voltage study combines topics in areas such as Sense amplifier, State and Reading.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Electronic switching in phase-change memories

A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer.
IEEE Transactions on Electron Devices (2004)

710 Citations

Electronic switching in phase-change memories

A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer.
IEEE Transactions on Electron Devices (2004)

710 Citations

Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti.
symposium on vlsi technology (2004)

538 Citations

Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti.
symposium on vlsi technology (2004)

538 Citations

Reliability study of phase-change nonvolatile memories

A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli.
IEEE Transactions on Device and Materials Reliability (2004)

491 Citations

Reliability study of phase-change nonvolatile memories

A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli.
IEEE Transactions on Device and Materials Reliability (2004)

491 Citations

Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev.
IEEE Transactions on Electron Devices (2004)

410 Citations

Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev.
IEEE Transactions on Electron Devices (2004)

410 Citations

A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage

Ferdinando Bedeschi;Rich Fackenthal;Claudio Resta;Enzo Michele Donze.
international solid-state circuits conference (2009)

384 Citations

A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage

Ferdinando Bedeschi;Rich Fackenthal;Claudio Resta;Enzo Michele Donze.
international solid-state circuits conference (2009)

384 Citations

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