World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
39
Citations
4522
World Ranking
7850
National Ranking
1410

Haiyang Xu publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Haiyang Xu sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 156 publications — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Haiyang Xu D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Haiyang Xu sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 39 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Haiyang Xu is affiliated with Northeast Normal University in China. Their research spans multiple scientific fields with a focus on engineering, materials science, and computer science. Xu's publication record includes notable engagement in subfields such as electrical and electronic engineering, materials chemistry, computer vision and pattern recognition, artificial intelligence, and electronic, optical, and magnetic materials.

Xu's work covers a range of topics reflecting an interdisciplinary approach, including:

  • ZnO doping and properties
  • Advanced memory and neural computing
  • Ga2O3 and related materials
  • Multimodal machine learning applications
  • Advanced photocatalysis techniques
  • Perovskite materials and applications
  • Photoreceptor and optogenetics research

They have coauthored frequently with several researchers, indicating collaborative efforts across various projects. Frequent coauthors include:

  • Yichun Liu
  • Jiangang Ma
  • Bingsheng Li
  • Zhongqiang Wang
  • Xiaoning Zhao

Xu's publications often appear in both academic journals and preprint repositories, with a significant number published in venues such as:

  • arXiv (Cornell University)
  • IEEE Electron Device Letters
  • Journal of Materials Chemistry C
  • Coatings
  • Molecular Catalysis

Among their recent papers are the following:

  • mPLUG-Owl: Modularization Empowers Large Language Models with Multimodality, 2023, arXiv (Cornell University)
  • Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-βGa2O3/n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method, 2023, Small
  • Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction, 2021, Materials Today Physics
  • Self-assembly of highly-dispersed phosphotungstic acid clusters onto graphitic carbon nitride nanosheets as fascinating molecular-scale Z-scheme heterojunctions for photocatalytic solar-to-fuels conversion, 2020, Applied Catalysis B: Environmental
  • High-performance high-temperature solar-blind photodetector based on polycrystalline Ga2O3 film, 2020, Journal of Alloys and Compounds

Best Publications

  • TiC3 Monolayer with High Specific Capacity for Sodium-Ion Batteries.

    Tong Yu;Ziyuan Zhao;Lulu Liu;Shoutao Zhang

  • Ultra-broadband metamaterial absorbers from long to very long infrared regime.

    Yu Zhou;Zheng Qin;Zhongzhu Liang;Zhongzhu Liang;Dejia Meng

  • Superhydrophobic and Ultraviolet-Blocking Cotton Textiles

    Lingling Wang;Xintong Zhang;Bing Li;Panpan Sun

  • Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility.

    Tong Yu;Ziyuan Zhao;Yuanhui Sun;Aitor Bergara

  • mPLUG-Owl: Modularization Empowers Large Language Models with Multimodality

    Unknown

  • Reduced Graphene Oxide Conformally Wrapped Silver Nanowire Networks for Flexible Transparent Heating and Electromagnetic Interference Shielding

    Yang Yang;Sai Chen;Wanli Li;Peng Li

  • Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices

    Zhongqiang Wang;Tao Zeng;Yanyun Ren;Ya Lin

  • Memristors with organic???inorganic halide perovskites

    Xiaoning Zhao;Haiyang Xu;Zhongqiang Wang;Ya Lin

  • Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics.

    Jiaqi Xu;Xiaoning Zhao;Zhongqiang Wang;Haiyang Xu

  • Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

    Z. Q. Wang;H. Y. Xu;X. H. Li;X. T. Zhang

  • Stable and metallic two-dimensional TaC2 as an anode material for lithium-ion battery

    Tong Yu;Shoutao Zhang;Fei Li;Ziyuan Zhao

  • Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

    Z. Q. Wang;H. Y. Xu;L. Zhang;X. H. Li

  • High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity

    Haitao Zhou;Lujia Cong;Jiangang Ma;Bingsheng Li

  • Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-β Ga2 O3 /n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method.

    Unknown

  • High-Temperature Ferromagnetism in an Fe3P Monolayer with a Large Magnetic Anisotropy

    Shuang Zheng;Chengxi Huang;Tong Yu;Meiling Xu

  • mPLUG-2: A Modularized Multi-modal Foundation Model Across Text, Image and Video

    Unknown

  • Metallic P3C monolayer as anode for sodium-ion batteries

    Ziyuan Zhao;Tong Yu;Shoutao Zhang;Haiyang Xu

  • Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon

    Xiaoning Zhao;Haiyang Xu;Zhongqiang Wang;Lei Zhang

  • Highly stable copper wire/alumina/polyimide composite films for stretchable and transparent heaters

    Peng Li;Jiangang Ma;Haiyang Xu;Xiaodan Xue

  • mPLUG: Effective and Efficient Vision-Language Learning by Cross-modal Skip-connections

    Unknown

  • CsPbBr3‐Quantum‐Dots/Polystyrene@Silica Hybrid Microsphere Structures with Significantly Improved Stability for White LEDs

    Weiqiang Yang;Fei Gao;Yue Qiu;Weizhen Liu

  • Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy

    X. H. Li;H. Y. Xu;X. T. Zhang;Y. C. Liu

  • Ultrafast carrier dynamics in two-dimensional transition metal dichalcogenides

    Yuanzheng Li;Yuanzheng Li;Jia Shi;Jia Shi;Yang Mi;Xinyu Sui;Xinyu Sui

  • Highly stable and luminescent silica-coated perovskite quantum dots at nanoscale-particle level via nonpolar solvent synthesis

    Fei Gao;Weiqiang Yang;Xiuling Liu;Yuanzheng Li

  • Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory.

    Hanlu Ma;Wei Wang;Haiyang Xu;Zhongqiang Wang

  • Accurate identification of layer number for few-layer WS 2 and WSe 2 via spectroscopic study

    Yuanzheng Li;Xinshu Li;Tong Yu;Guochun Yang

  • Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory

    Xiaoning Zhao;Zeying Fan;Haiyang Xu;Zhongqiang Wang

  • Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction.

    Mingzhu Chen;Jiangang Ma;Peng Li;Haiyang Xu

  • Photoassisted Electroforming Method for Reliable Low-Power Organic–Inorganic Perovskite Memristors

    Xiaoning Zhao;Zhongqiang Wang;Wentong Li;Shaowu Sun

  • Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors.

    Xiaoning Zhao;Zhongqiang Wang;Yu Xie;Haiyang Xu

  • High-performance high-temperature solar-blind photodetector based on polycrystalline Ga2O3 film

    Hai-tao Zhou;Lu-jia Cong;Jian-gang Ma;Ming-zhu Chen

  • Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction

    H. Wang;J. Ma;L. Cong;H. Zhou

  • Self-assembly of highly-dispersed phosphotungstic acid clusters onto graphitic carbon nitride nanosheets as fascinating molecular-scale Z-scheme heterojunctions for photocatalytic solar-to-fuels conversion

    Xiaoyi Jiang;Xiaoyi Jiang;Zhenyi Zhang;Zhenyi Zhang;Menghan Sun;Weizhen Liu

  • 2D few-layer iron phosphosulfide: a self-buffer heterophase structure induced by irreversible breakage of P–S bonds for high-performance lithium/sodium storage

    Chao-Ying Fan;Xiao-Hua Zhang;Yan-Hong Shi;Hai-Yang Xu

Frequent Co-Authors

Yichun Liu
Yichun Liu Northeast Normal University
Guochun Yang
Guochun Yang Northeast Normal University
Xinfeng Liu
Xinfeng Liu National Center for Nanoscience and Technology, China
Xintong Zhang
Xintong Zhang Northeast Normal University
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Zhenhui Kang
Zhenhui Kang Macau University of Science and Technology
David R. Smith
David R. Smith Duke University
Zheng Liu
Zheng Liu Nanyang Technological University
Qing Zhang
Qing Zhang Nanyang Technological University
Chao Zhang
Chao Zhang University of Wollongong

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