World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
54
Citations
9533
World Ranking
8966
National Ranking
166

Florencio Sánchez publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Florencio Sánchez sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 290 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Florencio Sánchez D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Florencio Sánchez sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Florencio Sánchez is affiliated with the Institut de Ciència de Materials de Barcelona in Spain. Their research primarily focuses on the fields of Engineering and Materials Science, with notable contributions in the areas of Electrical and Electronic Engineering and Materials Chemistry. Subfields such as Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, and Condensed Matter Physics are also part of their research scope.

The scientist has contributed extensively to topics including Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, MXene and MAX Phase Materials, Ferroelectric and Piezoelectric Materials, Electronic and Structural Properties of Oxides, Advanced Memory and Neural Computing, and Magnetic and transport properties of perovskites and related materials.

Recent publications highlight their involvement in cutting-edge research on ferroelectric materials and devices. These include:

  • Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices, 2021, ACS Applied Electronic Materials
  • Roadmap on ferroelectric hafnia- and zirconia-based materials and devices, 2023, APL Materials
  • Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001), 2020, Crystal Growth & Design
  • Non-volatile optical switch of resistance in photoferroelectric tunnel junctions, 2021, Nature Communications
  • Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface-Engineered Hf0.5Zr0.5O2 Tunnel Devices, 2020, Advanced Functional Materials

Their frequent co-authors include Ignasi Fina, Tingfeng Song, Huan Tan, Saúl Estandía, and N. Dix, indicating strong collaborative efforts across various projects and publications.

Florencio Sánchez's research outputs have been published predominantly in journals such as ACS Applied Electronic Materials, Applied Physics Letters, Journal of Materials Chemistry C, ACS Applied Materials & Interfaces, and APL Materials. These venues represent platforms focused on materials science, electronic engineering, and applied physics.

Best Publications

  • Electric-field control of exchange bias in multiferroic epitaxial heterostructures.

    V. Laukhin;V. Skumryev;X. Martí;D. Hrabovsky

  • Surface symmetry-breaking and strain effects on orbital occupancy in transition metal perovskite epitaxial films

    D. Pesquera;G. Herranz;A. Barla;E. Pellegrin

  • Towards Oxide Electronics: a Roadmap

    M. Coll;J. Fontcuberta;M. Althammer;M. Bibes

  • Multiferroic iron oxide thin films at room-temperature

    Martí Gich;Ignasi Fina;Alessio Morelli;Florencio Sánchez

  • High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

    G. Herranz;F. Sánchez;N. Dix;M. Scigaj

  • Engineering two-dimensional superconductivity and Rashba spin–orbit coupling in LaAlO3/SrTiO3 quantum wells by selective orbital occupancy

    Gervasi Herranz;Gyanendra Singh;Nicolas Bergeal;Alexis Jouan

  • Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

    Saúl Estandía;Nico Dix;Jaume Gazquez;Ignasi Fina

  • Magnetization Reversal by Electric-Field Decoupling of Magnetic and Ferroelectric Domain Walls in Multiferroic-Based Heterostructures

    V. Skumryev;V. Skumryev;V. Laukhin;V. Laukhin;I. Fina;X. Martí

  • Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques

    I. Fina;L. Fàbrega;E. Langenberg;X. Martí

  • Tailored surfaces of perovskite oxide substrates for conducted growth of thin films

    Florencio Sánchez;Carmen Ocal;Josep Fontcuberta

  • Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

    J. Lyu;I. Fina;R. Bachelet;Guillaume Saint-Girons

  • Elastic and orbital effects on thickness-dependent properties of manganite thin films

    I. C. Infante;F. Sánchez;J. Fontcuberta;M. Wojcik

  • Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

    Ignasi Fina;Florencio Sánchez

  • Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation

    F. Sánchez;J. L. Morenza;R. Aguiar;J. C. Delgado

  • Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

    Unknown

  • Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects

    Miren Isasa;Amilcar Bedoya-Pinto;Saül Vélez;Federico Golmar

  • Atomically flat SrO-terminated SrTiO3(001) substrate

    R. Bachelet;F. Sánchez;F. J. Palomares;C. Ocal

  • Selectable Spontaneous Polarization Direction and Magnetic Anisotropy in BiFeO3−CoFe2O4 Epitaxial Nanostructures

    Nico Dix;Rajaram Muralidharan;Jose-Manuel Rebled;Jose-Manuel Rebled;Sonia Estradé

  • Enhanced electron-electron correlations in nanometric SrRuO 3 epitaxial films

    G. Herranz;B. Martínez;J. Fontcuberta;F. Sánchez

  • Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

    J. Lyu;I. Fina;R. Solanas;J. Fontcuberta

  • Preparation of SrTiO3 thin films on Si(100) substrates by laser ablation: Application as buffer layer for YBa2Cu3O7 films

    F. Sánchez;M. Varela;X. Queralt;R. Aguiar

  • Dynamics of the hydrodynamical growth of columns on silicon exposed to ArF excimer-laser irradiation

    F. Sánchez;J.L. Morenza;R. Aguiar;J.C. Delgado

Frequent Co-Authors

Josep Fontcuberta
Josep Fontcuberta Institut de Ciència de Materials de Barcelona
Maria Varela
Maria Varela Complutense University of Madrid
Jaume Gazquez
Jaume Gazquez Institut de Ciència de Materials de Barcelona
Manuel Bibes
Manuel Bibes Centre national de la recherche scientifique, CNRS
Jordi Arbiol
Jordi Arbiol Catalan Institute of Nanoscience and Nanotechnology
Francesca Peiró
Francesca Peiró University of Barcelona
J.L. Morenza
J.L. Morenza University of Barcelona
Matthew F. Chisholm
Matthew F. Chisholm Oak Ridge National Laboratory
Jens Kreisel
Jens Kreisel University of Luxembourg
Jordi Sort
Jordi Sort Autonomous University of Barcelona

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Florencio Sánchez

Trending Scientists