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Fukai Shan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 43 12370 11962 3366 3351 146 6420

Fukai Shan publications per year

The chart shows the history of publications by Fukai Shan between 1998 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Fukai Shan published across 28 years, from 1998 to 2025, averaging 5.8 papers a year. Output peaked at 15 publications in 2024. 27 of the 162 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1998 to 2025. Vertical axis: number of publications, 0 to 15. Peak 15 publications in 2024. 1998: 2 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 7 publications 2004: 9 publications 2005: 4 publications 2006: 9 publications 2007: 3 publications 2008: 5 publications 2009: 1 publication 2010: 0 publications 2011: 0 publications 2012: 1 publication 2013: 1 publication 2014: 8 publications 2015: 12 publications 2016: 10 publications 2017: 8 publications 2018: 8 publications 2019: 12 publications 2020: 12 publications 2021: 6 publications 2022: 11 publications 2023: 6 publications 2024: 15 publications 2025: 12 publications
1998 2025

162 publications in total across all disciplines

View publications per year as a table
Fukai Shan: publications per year, 1998 to 2025
Year Publications
1998 2
1999 0
2000 0
2001 0
2002 0
2003 7
2004 9
2005 4
2006 9
2007 3
2008 5
2009 1
2010 0
2011 0
2012 1
2013 1
2014 8
2015 12
2016 10
2017 8
2018 8
2019 12
2020 12
2021 6
2022 11
2023 6
2024 15
2025 12
Total 162
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Fukai Shan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Fukai Shan sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 130–149 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 146 publications — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723 146
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Fukai Shan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Fukai Shan sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 42–43 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450 43
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Fukai Shan is affiliated with Qingdao University in China. Their research primarily spans the fields of Engineering and Materials Science, with significant focus areas including Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Biomedical Engineering, and Cellular and Molecular Neuroscience.

The main topics of Shan's work cover various aspects of advanced technology and material sciences. These topics include:

  • Advanced Memory and Neural Computing
  • ZnO doping and properties
  • Transition Metal Oxide Nanomaterials
  • Thin-Film Transistor Technologies
  • 2D Materials and Applications
  • Neuroscience and Neural Engineering
  • Perovskite Materials and Applications

Shan has contributed to a number of recent publications across reputable journals. Selected papers include:

  • "Synthesizing BaTiO3 Nanostructures to Explore Morphological Influence, Kinetics, and Mechanism of Piezocatalytic Dye Degradation," 2020, ACS Applied Materials & Interfaces
  • "Recent Developments of Optoelectronic Synaptic Devices Based on Metal Halide Perovskites," 2022, Advanced Functional Materials
  • "Welded silver nanowire networks as high-performance transparent conductive electrodes: Welding techniques and device applications," 2020, Applied Materials Today
  • "Advanced tape-exfoliated method for preparing large-area 2D monolayers: a review," 2021, 2D Materials
  • "Artificial optoelectronic synaptic devices based on vertical organic field-effect transistors with low energy consumption," 2023, Advanced Composites and Hybrid Materials

Frequent collaborators in Shan's research include:

  • Ao Liu
  • Zhenyu Yang
  • Guangtan Miao
  • Dandan Hao
  • Yanan Ding

Shan's work is regularly published in several prominent venues, notably:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Journal of Materials Chemistry C
  • Advanced Functional Materials

Best Publications

  • Blueshift of near band edge emission in Mg doped ZnO thin films and aging

    F. K. Shan;B. I. Kim;G. X. Liu;Z. F. Liu

  • Band gap energy of pure and Al-doped ZnO thin films

    F.K. Shan;Y.S. Yu

  • The 2016 oxide electronic materials and oxide interfaces roadmap

    M. Lorenz;M. S. Ramachandra Rao;T. Venkatesan;E. Fortunato

  • Aging effect and origin of deep-level emission in ZnO thin film deposited by pulsed laser deposition

    F. K. Shan;G. X. Liu;W. J. Lee;G. H. Lee

  • The role of oxygen vacancies in epitaxial-deposited ZnO thin films

    F. K. Shan;G. X. Liu;W. J. Lee;B. C. Shin

  • Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

    Guoxia Liu;Ao Liu;Huihui Zhu;Byoungchul Shin

  • Synthesizing BaTiO3 Nanostructures to Explore Morphological Influence, Kinetics, and Mechanism of Piezocatalytic Dye Degradation.

    Daiming Liu;Daiming Liu;Chengchao Jin;Fukai Shan;Junjing He;Junjing He

  • Solution Combustion Synthesis: Low-Temperature Processing for p-Type Cu:NiO Thin Films for Transparent Electronics.

    Ao Liu;Huihui Zhu;Zidong Guo;You Meng

  • Substrate effects of ZnO thin films prepared by PLD technique

    F.K. Shan;B.C. Shin;S.W. Jang;Y.S. Yu

  • Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

    Ao Liu;Guo Xia Liu;Hui Hui Zhu;Feng Xu

  • Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors

    Ao Liu;Guoxia Liu;Huihui Zhu;Huijun Song

  • Advances of 2D bismuth in energy sciences.

    Xuhai Liu;Xuhai Liu;Shengli Zhang;Shiying Guo;Bo Cai

  • Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

    F. K. Shan;G. X. Liu;W. J. Lee;G. H. Lee

  • Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    Ao Liu;Guoxia Liu;Huihui Zhu;Byoungchul Shin

  • High-piezocatalytic performance of eco-friendly (Bi1/2Na1/2)TiO3-based nanofibers by electrospinning

    Daiming Liu;Yawei Song;Zhijie Xin;Guoxia Liu

  • Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition

    Z.F. Liu;F.K. Shan;Y.X. Li;B.C. Shin

  • High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

    G. X. Liu;A. Liu;F. K. Shan;Y. Meng

  • Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition

    F.K. Shan;G.X. Liu;W.J. Lee;G.H. Lee

  • High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

    Fukai Shan;Ao Liu;Huihui Zhu;Weijin Kong

  • Stokes shift, blue shift and red shift of ZnO-based thin films deposited by pulsed-laser deposition

    F.K. Shan;G.X. Liu;W.J. Lee;B.C. Shin

  • Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by excimer laser

    F.K. Shan;Y.S. Yu

  • Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

    Chundan Zhu;Ao Liu;Guoxia Liu;Guixia Jiang

  • Recent Developments of Optoelectronic Synaptic Devices Based on Metal Halide Perovskites

    Unknown

Frequent Co-Authors

Elvira Fortunato
Elvira Fortunato Universidade Nova de Lisboa
Rodrigo Martins
Rodrigo Martins Universidade Nova de Lisboa
Jingquan Liu
Jingquan Liu Qingdao University
Wenrong Yang
Wenrong Yang Deakin University
Yong-Young Noh
Yong-Young Noh Pohang University of Science and Technology
Yongxiang Li
Yongxiang Li RMIT University
Colin J. Barrow
Colin J. Barrow Deakin University
Ning Han
Ning Han KU Leuven
Zhifu Liu
Zhifu Liu Chinese Academy of Sciences
Johnny C. Ho
Johnny C. Ho City University of Hong Kong

External Links

Personal website of Fukai Shan

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Best Scientists Citing Fukai Shan

Wei Huang

Wei Huang

Chinese Academy of Sciences

Publications: 20

Thomas D. Anthopoulos

Thomas D. Anthopoulos

University of Manchester

Publications: 18

Tobin J. Marks

Tobin J. Marks

Northwestern University

Publications: 18

Jin Jang

Jin Jang

Kyung Hee University

Publications: 17

Junbiao Peng

Junbiao Peng

South China University of Technology

Publications: 17

Antonio Facchetti

Antonio Facchetti

Northwestern University

Publications: 16

Yong-Young Noh

Yong-Young Noh

Pohang University of Science and Technology

Publications: 14

Marius Grundmann

Marius Grundmann

Leipzig University

Publications: 14

Elvira Fortunato

Elvira Fortunato

Universidade Nova de Lisboa

Publications: 13

Hyung Koun Cho

Hyung Koun Cho

Sungkyunkwan University

Publications: 13

Wenjun Liu

Wenjun Liu

Beijing University of Posts and Telecommunications

Publications: 13

Rodrigo Martins

Rodrigo Martins

Universidade Nova de Lisboa

Publications: 12

Jin Hyeok Kim

Jin Hyeok Kim

Chonnam National University

Publications: 12

Michael Lorenz

Michael Lorenz

Leipzig University

Publications: 10

Jingquan Liu

Jingquan Liu

Qingdao University

Publications: 10

Magnus Willander

Magnus Willander

Linköping University

Publications: 10

Trending Scientists

Kuo-Chuan Ho

Kuo-Chuan Ho

National Taiwan University

Paul A. Midgley

Paul A. Midgley

University of Cambridge

Nripan Mathews

Nripan Mathews

Nanyang Technological University

Ian C. Burke

Ian C. Burke

Washington State University

J.E. Fernández

J.E. Fernández

Spanish National Research Council

Martin E. P. Seligman

Martin E. P. Seligman

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Mustafa Odabasi

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Intawat Nookaew

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Jurriaan Ton

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