World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
43
Citations
6420
World Ranking
12370
National Ranking
3366

Fukai Shan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Fukai Shan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 146 publications — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Fukai Shan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Fukai Shan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Fukai Shan is affiliated with Qingdao University in China. Their research primarily spans the fields of Engineering and Materials Science, with significant focus areas including Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Biomedical Engineering, and Cellular and Molecular Neuroscience.

The main topics of Shan's work cover various aspects of advanced technology and material sciences. These topics include:

  • Advanced Memory and Neural Computing
  • ZnO doping and properties
  • Transition Metal Oxide Nanomaterials
  • Thin-Film Transistor Technologies
  • 2D Materials and Applications
  • Neuroscience and Neural Engineering
  • Perovskite Materials and Applications

Shan has contributed to a number of recent publications across reputable journals. Selected papers include:

  • "Synthesizing BaTiO3 Nanostructures to Explore Morphological Influence, Kinetics, and Mechanism of Piezocatalytic Dye Degradation," 2020, ACS Applied Materials & Interfaces
  • "Recent Developments of Optoelectronic Synaptic Devices Based on Metal Halide Perovskites," 2022, Advanced Functional Materials
  • "Welded silver nanowire networks as high-performance transparent conductive electrodes: Welding techniques and device applications," 2020, Applied Materials Today
  • "Advanced tape-exfoliated method for preparing large-area 2D monolayers: a review," 2021, 2D Materials
  • "Artificial optoelectronic synaptic devices based on vertical organic field-effect transistors with low energy consumption," 2023, Advanced Composites and Hybrid Materials

Frequent collaborators in Shan's research include:

  • Ao Liu
  • Zhenyu Yang
  • Guangtan Miao
  • Dandan Hao
  • Yanan Ding

Shan's work is regularly published in several prominent venues, notably:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Journal of Materials Chemistry C
  • Advanced Functional Materials

Best Publications

  • Blueshift of near band edge emission in Mg doped ZnO thin films and aging

    F. K. Shan;B. I. Kim;G. X. Liu;Z. F. Liu

  • Band gap energy of pure and Al-doped ZnO thin films

    F.K. Shan;Y.S. Yu

  • The 2016 oxide electronic materials and oxide interfaces roadmap

    M. Lorenz;M. S. Ramachandra Rao;T. Venkatesan;E. Fortunato

  • Aging effect and origin of deep-level emission in ZnO thin film deposited by pulsed laser deposition

    F. K. Shan;G. X. Liu;W. J. Lee;G. H. Lee

  • The role of oxygen vacancies in epitaxial-deposited ZnO thin films

    F. K. Shan;G. X. Liu;W. J. Lee;B. C. Shin

  • Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

    Guoxia Liu;Ao Liu;Huihui Zhu;Byoungchul Shin

  • Synthesizing BaTiO3 Nanostructures to Explore Morphological Influence, Kinetics, and Mechanism of Piezocatalytic Dye Degradation.

    Daiming Liu;Daiming Liu;Chengchao Jin;Fukai Shan;Junjing He;Junjing He

  • Solution Combustion Synthesis: Low-Temperature Processing for p-Type Cu:NiO Thin Films for Transparent Electronics.

    Ao Liu;Huihui Zhu;Zidong Guo;You Meng

  • Substrate effects of ZnO thin films prepared by PLD technique

    F.K. Shan;B.C. Shin;S.W. Jang;Y.S. Yu

  • Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

    Ao Liu;Guo Xia Liu;Hui Hui Zhu;Feng Xu

  • Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors

    Ao Liu;Guoxia Liu;Huihui Zhu;Huijun Song

  • Advances of 2D bismuth in energy sciences.

    Xuhai Liu;Xuhai Liu;Shengli Zhang;Shiying Guo;Bo Cai

  • Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

    F. K. Shan;G. X. Liu;W. J. Lee;G. H. Lee

  • Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    Ao Liu;Guoxia Liu;Huihui Zhu;Byoungchul Shin

  • High-piezocatalytic performance of eco-friendly (Bi1/2Na1/2)TiO3-based nanofibers by electrospinning

    Daiming Liu;Yawei Song;Zhijie Xin;Guoxia Liu

  • Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition

    Z.F. Liu;F.K. Shan;Y.X. Li;B.C. Shin

  • High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

    G. X. Liu;A. Liu;F. K. Shan;Y. Meng

  • Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition

    F.K. Shan;G.X. Liu;W.J. Lee;G.H. Lee

  • High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

    Fukai Shan;Ao Liu;Huihui Zhu;Weijin Kong

  • Stokes shift, blue shift and red shift of ZnO-based thin films deposited by pulsed-laser deposition

    F.K. Shan;G.X. Liu;W.J. Lee;B.C. Shin

  • Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by excimer laser

    F.K. Shan;Y.S. Yu

  • Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

    Chundan Zhu;Ao Liu;Guoxia Liu;Guixia Jiang

  • Recent Developments of Optoelectronic Synaptic Devices Based on Metal Halide Perovskites

    Unknown

Frequent Co-Authors

Elvira Fortunato
Elvira Fortunato Universidade Nova de Lisboa
Rodrigo Martins
Rodrigo Martins Universidade Nova de Lisboa
Jingquan Liu
Jingquan Liu Qingdao University
Wenrong Yang
Wenrong Yang Deakin University
Yong-Young Noh
Yong-Young Noh Pohang University of Science and Technology
Yongxiang Li
Yongxiang Li RMIT University
Colin J. Barrow
Colin J. Barrow Deakin University
Ning Han
Ning Han KU Leuven
Zhifu Liu
Zhifu Liu Chinese Academy of Sciences
Johnny C. Ho
Johnny C. Ho City University of Hong Kong

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