World's Best Scientists 2026 revealed!
Xiaofeng Fan

Xiaofeng Fan

D-Index & Metrics

Materials Science

D-Index
60
Citations
14813
World Ranking
6974
National Ranking
2063

Chemistry

D-Index
54
Citations
11655
World Ranking
12524
National Ranking
1963

Xiaofeng Fan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Xiaofeng Fan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 254 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Xiaofeng Fan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Xiaofeng Fan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Xiaofeng Fan is affiliated with Jilin University in China and has contributed extensively to the fields of Engineering and Materials Science with a focus on subfields including Materials Chemistry, Electrical and Electronic Engineering, Mechanical Engineering, Renewable Energy, Sustainability and the Environment, and Aerospace Engineering.

Their research spans several main topics, which include:

  • 2D Materials and Applications
  • Electrocatalysts for Energy Conversion
  • Advancements in Battery Materials
  • Advanced Thermoelectric Materials and Devices
  • MXene and MAX Phase Materials
  • Chalcogenide Semiconductor Thin Films
  • High Entropy Alloys Studies

Xiaofeng Fan's publication record includes papers published in noted venues such as:

  • SSRN Electronic Journal
  • Journal of Alloys and Compounds
  • Applied Surface Science
  • Journal of Materials Chemistry A
  • Journal of Materials Chemistry C

Recent papers authored or co-authored by Xiaofeng Fan cover a range of topics and include:

  • "Favorable Energy Band Alignment of TiO2 Anatase/Rutile Heterophase Homojunctions Yields Photocatalytic Hydrogen Evolution with Quantum Efficiency Exceeding 45.6%" (2022) in Advanced Energy Materials
  • "Engineering of Transition Metal Sulfide Nanostructures as Efficient Electrodes for High-Performance Supercapacitors" (2022) in ACS Applied Energy Materials
  • "Potential anodic applications of 2D MoS2 for K-ion batteries" (2021) in Journal of Alloys and Compounds
  • "Humidity sensor based on a graphene oxide-coated few-mode fiber Mach-Zehnder interferometer" (2020) in Optics Express
  • "An overview of 2D metal sulfides and carbides as Na host materials for Na-ion batteries" (2023) in Chemical Engineering Journal

Frequent co-authors who have collaborated extensively with Xiaofeng Fan include:

  • Weitao Zheng
  • David J. Singh
  • Xiaoqiang Cui
  • Xingshuo Liu
  • Changzhi Gu

Best Publications

  • Array of nanosheets render ultrafast and high-capacity Na-ion storage by tunable pseudocapacitance

    Dongliang Chao;Changrong Zhu;Peihua Yang;Xinhui Xia

  • Light scattering and surface plasmons on small spherical particles

    Xiaofeng Fan;Weitao Zheng;David J Singh;David J Singh

  • Raman spectroscopy of epitaxial graphene on a SiC substrate

    Z. H. Ni;W. Chen;X. F. Fan;J. L. Kuo

  • Single-atom cobalt array bound to distorted 1T MoS 2 with ensemble effect for hydrogen evolution catalysis

    Kun Qi;Xiaoqiang Cui;Lin Gu;Shansheng Yu

  • Orbital analysis of electronic structure and phonon dispersion in MoS 2 , MoSe 2 , WS 2 , and WSe 2 monolayers under strain

    Chung-Huai Chang;Xiaofeng Fan;Shi-Hsin Lin;Jer-Lai Kuo

  • Adsorption and diffusion of Li on pristine and defective graphene.

    Xiaofeng Fan;W T Zheng;Jer-Lai Kuo

  • Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

    Scott T. Huxtable;Alexis R. Abramson;Chang Lin Tien;Arun Majumdar

  • On the origin of the high coarsening resistance of Ω plates in Al–Cu–Mg–Ag Alloys

    Christopher Ross Hutchinson;Xingyan Fan;Xingyan Fan;Stephen J Pennycook;Gary J Shiflet

  • SiGeC/Si superlattice microcoolers

    Xiaofeng Fan;Gehong Zeng;Chris LaBounty;John E. Bowers

  • Favorable Energy Band Alignment of TiO2 Anatase/Rutile Heterophase Homojunctions Yields Photocatalytic Hydrogen Evolution with Quantum Efficiency Exceeding 45.6%

    Unknown

  • Band gap opening of graphene by doping small boron nitride domains

    Xiaofeng Fan;Xiaofeng Fan;Zexiang Shen;A. Q. Liu;Jer-Lai Kuo

  • Density Functional Theory Calculations for the Quantum Capacitance Performance of Graphene-Based Electrode Material

    G. M. Yang;G. M. Yang;H. Z. Zhang;X. F. Fan;W. T. Zheng

  • Adsorption of Single Li and the Formation of Small Li Clusters on Graphene for the Anode of Lithium-Ion Batteries

    Xiaofeng Fan;W. T. Zheng;Jer-Lai Kuo;David J. Singh;David J. Singh

  • Engineering of Transition Metal Sulfide Nanostructures as Efficient Electrodes for High-Performance Supercapacitors

    Unknown

  • FeCl3‐Based Few‐Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping

    Da Zhan;Li Sun;Zhen Hua Ni;Lei Liu

  • Recent progress of TMD nanomaterials: phase transitions and applications

    H. H. Huang;Xiaofeng Fan;David J. Singh;W. T. Zheng

  • Unraveling the Potassium Storage Mechanism in Graphite Foam

    Jilei Liu;Tingting Yin;Bingbing Tian;Bowei Zhang

  • Nucleation of single-walled carbon nanotubes.

    Xudong Fan;Xudong Fan;R. Buczko;R. Buczko;R. Buczko;Alexander A Puretzky;Alexander A Puretzky;David B Geohegan

  • DFT Study of Hydrogen Storage by Spillover on Graphene with Boron Substitution

    Hong-Yu Wu;Hong-Yu Wu;Xiaofeng Fan;Jer-Lai Kuo;Wei-Qiao Deng

  • Controlling phase transition for single-layer MTe2 (M = Mo and W): modulation of the potential barrier under strain

    H. H. Huang;Xiaofeng Fan;David J. Singh;David J. Singh;Hong Chen

  • Improving polysulfides adsorption and redox kinetics by the Co4N nanoparticle/N-Doped carbon composites for lithium-sulfur batteries

    Kuikui Xiao;Kuikui Xiao;Jin Wang;Zhen Chen;Yuhong Qian

  • Interaction between graphene and the surface of SiO2.

    X. F. Fan;W. T. Zheng;Viorel Chihaia;Zexiang Shen

  • In Situ Observation and Electrochemical Study of Encapsulated Sulfur Nanoparticles by MoS2 Flakes

    Wei Tang;Wei Tang;Zhongxin Chen;Bingbing Tian;Hyun-Wook Lee

  • Roles of Cu codoping and oxygen vacancies on ferromagnetism in In2O3: Fe

    L. X. Guan;J. G. Tao;Z. R. Xiao;B. C. Zhao

  • FeCl3 based Few-Layer Graphene Intercalation Compounds: Single Linear Dispersion Electronic Band Structure and Strong Charge Transfer Doping

    Da Zhan;Li Sun;Zhenhua Ni;Lei Liu

Frequent Co-Authors

David J. Singh
David J. Singh University of Missouri
Weitao Zheng
Weitao Zheng Jilin University
Jer-Lai Kuo
Jer-Lai Kuo Academia Sinica
Adrian M. Di Bisceglie
Adrian M. Di Bisceglie Saint Louis University
Zexiang Shen
Zexiang Shen Nanyang Technological University
Raymond C. Harris
Raymond C. Harris Vanderbilt University Medical Center
Zhenhua Ni
Zhenhua Ni Southeast University
Yunfeng Shi
Yunfeng Shi Rensselaer Polytechnic Institute
Jianyi Lin
Jianyi Lin Nanyang Technological University
Jilei Liu
Jilei Liu Hunan University

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