World's Best Scientists 2026 revealed!
Charles T. Rettner

Charles T. Rettner

D-Index & Metrics

Materials Science

D-Index
83
Citations
23239
World Ranking
2394
National Ranking
692

Physics

D-Index
89
Citations
25362
World Ranking
2338
National Ranking
1174

Overview

Charles T. Rettner is affiliated with IBM (United States) and conducts research primarily in the fields of engineering and materials science. Their work intersects several subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, molecular biology, and cognitive neuroscience.

The scientist's research covers a range of topics, with notable focus on semiconductor materials and devices, advanced memory and neural computing, and electronic and structural properties of oxides. Additional topics in their research portfolio include advanced biosensing and bioanalysis techniques, DNA and nucleic acid chemistry, nanopore and nanochannel transport studies, and neuroscience and neural engineering.

Among recent publications are the following papers:

  • Precise pitch-scaling of carbon nanotube arrays within three-dimensional DNA nanotrenches, 2020, Science
  • A three-dimensional micro-electrode array for in-vitro neuronal interfacing, 2020, Journal of Neural Engineering
  • Surface Initiated Polymer Thin Films for the Area Selective Deposition and Etching of Metal Oxides, 2020, ACS Nano
  • Additive Lithography-Organic Monolayer Patterning Coupled with an Area-Selective Deposition, 2021, ACS Applied Materials & Interfaces
  • Spatial Control of the Self-assembled Block Copolymer Domain Orientation and Alignment on Photopatterned Surfaces, 2020, ACS Applied Materials & Interfaces

Frequent co-authors in their research include Noel Arellano, Teya Topuria, Holt Bui, Brian Hughes, and Rudy J. Wojtecki.

The scientist has published multiple papers in several journal venues, among which the most frequent are:

  • ACS Applied Materials & Interfaces
  • Science
  • Journal of Neural Engineering
  • ACS Nano
  • Nature Nanotechnology

Best Publications

  • Phase-change random access memory: a scalable technology

    S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner

  • Nanoscale Nuclear Magnetic Resonance with a Nitrogen-Vacancy Spin Sensor

    H. J. Mamin;M. Kim;M. Kim;M. H. Sherwood;C. T. Rettner

  • Current-controlled magnetic domain-wall nanowire shift register.

    Masamitsu Hayashi;Luc Thomas;Rai Moriya;Charles Rettner

  • Nanoscale magnetic resonance imaging

    C. L. Degen;M. Poggio;H. J. Mamin;C. T. Rettner

  • Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length

    Luc Thomas;Masamitsu Hayashi;Masamitsu Hayashi;Xin Jiang;Rai Moriya

  • Placement and orientation of individual DNA shapes on lithographically patterned surfaces

    Ryan J. Kershner;Ryan J. Kershner;Luisa D. Bozano;Christine M. Micheel;Christine M. Micheel;Albert M. Hung;Albert M. Hung

  • Dependence of current and field driven depinning of domain walls on their structure and chirality in permalloy nanowires

    Masamitsu Hayashi;Masamitsu Hayashi;Luc Thomas;Charles Rettner;Rai Moriya

  • Dense Self-Assembly on Sparse Chemical Patterns : Rectifying and Multiplying Lithographic Patterns Using Block Copolymers

    Joy Y. Cheng;Charles T. Rettner;Daniel P. Sanders;Ho-Cheol Kim

  • Direct observation of the coherent precession of magnetic domain walls propagating along permalloy nanowires

    Masamitsu Hayashi;Masamitsu Hayashi;Luc Thomas;Charles Rettner;Rai Moriya

  • Vibrational Promotion of Electron Transfer

    Yuhui Huang;Charles T. Rettner;Daniel J. Auerbach;Alec M. Wodtke

  • Influence of Current on Field-Driven Domain Wall Motion in Permalloy Nanowires from Time Resolved Measurements of Anisotropic Magnetoresistance

    M. Hayashi;M. Hayashi;L. Thomas;Ya. B. Bazaliy;C. Rettner

  • Quantum‐state‐specific dynamics of the dissociative adsorption and associative desorption of H2 at a Cu(111) surface

    C. T. Rettner;H. A. Michelsen;D. J. Auerbach

  • Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires.

    Masamitsu Hayashi;Masamitsu Hayashi;Luc Thomas;Charles Rettner;Rai Moriya

  • Effect of rotation on the translational and vibrational energy dependence of the dissociative adsorption of D2 on Cu(111)

    H. A. Michelsen;C. T. Rettner;D. J. Auerbach;R. N. Zare

  • Dissociative chemisorption of CH4 on W(110): Dramatic activation by initial kinetic energy.

    CT Rettner;HE Pfnür;DJ Auerbach

  • Role of vibrational and translational energy in the activated dissociative adsorption of D2 on Cu(111).

    C. T. Rettner;D. J. Auerbach;H. A. Michelsen

  • Observation of direct vibrational excitation in gas-surface collisions: NO on Ag(111).

    C. T. Rettner;F. Fabre;J. Kimman;D. J. Auerbach

  • Dynamics of the direct reaction of hydrogen atoms adsorbed on Cu(111) with hydrogen atoms incident from the gas phase.

    C. T. Rettner

  • Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

    Y. C. Chen;C. T. Rettner;S. Raoux;G. W. Burr

  • Dynamics of magnetic domain walls under their own inertia.

    Luc Thomas;Rai Moriya;Charles Rettner;Stuart S.P. Parkin

Frequent Co-Authors

Stuart S. P. Parkin
Stuart S. P. Parkin Max Planck Institute of Microstructure Physics
Daniel J. Auerbach
Daniel J. Auerbach Max Planck Society
Joy Cheng
Joy Cheng IBM (United States)
Ho-Cheol Kim
Ho-Cheol Kim IBM (United States)
Geoffrey W. Burr
Geoffrey W. Burr IBM (United States)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Donald S. Bethune
Donald S. Bethune IBM (United States)
Bruce David Terris
Bruce David Terris Western Digital (Japan)
Andrew J. Kellock
Andrew J. Kellock IBM (United States)
Mahesh G. Samant
Mahesh G. Samant IBM (United States)

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