World's Best Scientists 2026 revealed!
Charles T. Rettner

Charles T. Rettner

D-Index & Metrics

Materials Science

D-Index
83
Citations
23239
World Ranking
2392
National Ranking
690

Physics

D-Index
89
Citations
25362
World Ranking
2338
National Ranking
1174

Charles T. Rettner publication distribution in Physics in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Charles T. Rettner sits on this spectrum.

103–122 publications: 7 scientists 123–142 publications: 10 scientists 143–162 publications: 31 scientists 163–182 publications: 35 scientists 183–202 publications: 53 scientists 203–222 publications: 81 scientists 223–242 publications: 85 scientists 243–262 publications: 112 scientists 263–282 publications: 114 scientists 283–302 publications: 126 scientists 303–322 publications: 136 scientists 323–342 publications: 162 scientists 343–362 publications: 155 scientists 363–382 publications: 156 scientists 383–402 publications: 134 scientists 403–422 publications: 145 scientists 423–442 publications: 147 scientists 443–462 publications: 131 scientists 463–482 publications: 131 scientists 483–502 publications: 116 scientists 503–522 publications: 106 scientists 523–542 publications: 103 scientists 543–562 publications: 87 scientists 563–582 publications: 84 scientists 583–602 publications: 94 scientists 603–622 publications: 70 scientists 623–642 publications: 76 scientists 643–662 publications: 60 scientists 663–682 publications: 54 scientists 683–702 publications: 60 scientists 703–722 publications: 48 scientists 723–742 publications: 64 scientists 743–762 publications: 48 scientists 763–782 publications: 37 scientists 783–802 publications: 43 scientists 803–822 publications: 34 scientists 823–842 publications: 36 scientists 843–862 publications: 32 scientists 863–882 publications: 32 scientists 883–902 publications: 31 scientists 903–922 publications: 25 scientists 923–942 publications: 15 scientists 943–962 publications: 24 scientists 963–982 publications: 13 scientists 983–1,002 publications: 21 scientists 1,003–1,022 publications: 21 scientists 1,023–1,042 publications: 16 scientists 1,043–1,062 publications: 9 scientists 1,063–1,082 publications: 19 scientists 1,083–1,102 publications: 11 scientists 1,103–1,122 publications: 17 scientists 1,123–1,142 publications: 11 scientists 1,143–1,162 publications: 7 scientists 1,163–1,182 publications: 4 scientists 1,183–1,202 publications: 10 scientists 1,203–1,222 publications: 8 scientists 1,223–1,242 publications: 16 scientists 1,243–1,262 publications: 4 scientists 1,263–1,282 publications: 10 scientists 1,283–1,302 publications: 5 scientists 1,303–1,322 publications: 7 scientists 1,323–1,342 publications: 4 scientists 1,343–1,362 publications: 8 scientists 1,363–1,382 publications: 6 scientists 1,383–1,402 publications: 7 scientists 1,403–1,422 publications: 3 scientists 1,423–1,442 publications: 4 scientists 1,443–1,462 publications: 4 scientists 1,463–1,468 publications: 3 scientists 1,469+ publications: 100 scientists
103 publications 1,469+

This scientist: 304 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,469 publications or more.

Charles T. Rettner D-index placement in Physics in 2026

The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Charles T. Rettner sits on this spectrum.

70–71 D-Index: 76 scientists 72–73 D-Index: 110 scientists 74–75 D-Index: 143 scientists 76–77 D-Index: 153 scientists 78–79 D-Index: 144 scientists 80–81 D-Index: 167 scientists 82–83 D-Index: 167 scientists 84–85 D-Index: 166 scientists 86–87 D-Index: 132 scientists 88–89 D-Index: 155 scientists 90–91 D-Index: 134 scientists 92–93 D-Index: 137 scientists 94–95 D-Index: 102 scientists 96–97 D-Index: 112 scientists 98–99 D-Index: 110 scientists 100–101 D-Index: 116 scientists 102–103 D-Index: 97 scientists 104–105 D-Index: 103 scientists 106–107 D-Index: 87 scientists 108–109 D-Index: 90 scientists 110–111 D-Index: 67 scientists 112–113 D-Index: 78 scientists 114–115 D-Index: 75 scientists 116–117 D-Index: 67 scientists 118–119 D-Index: 69 scientists 120–121 D-Index: 60 scientists 122–123 D-Index: 59 scientists 124–125 D-Index: 53 scientists 126–127 D-Index: 42 scientists 128–129 D-Index: 41 scientists 130–131 D-Index: 33 scientists 132–133 D-Index: 32 scientists 134–135 D-Index: 45 scientists 136–137 D-Index: 19 scientists 138–139 D-Index: 24 scientists 140–141 D-Index: 28 scientists 142–143 D-Index: 31 scientists 144–145 D-Index: 22 scientists 146–147 D-Index: 20 scientists 148–149 D-Index: 12 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 24 scientists 154–155 D-Index: 23 scientists 156–157 D-Index: 15 scientists 158–159 D-Index: 15 scientists 160–161 D-Index: 11 scientists 162–163 D-Index: 17 scientists 164–165 D-Index: 12 scientists 166–167 D-Index: 11 scientists 168–169 D-Index: 9 scientists 170–171 D-Index: 9 scientists 172–173 D-Index: 11 scientists 174–175 D-Index: 4 scientists 176–177 D-Index: 8 scientists 178–179 D-Index: 5 scientists 180–181 D-Index: 3 scientists 182–183 D-Index: 4 scientists 184 D-Index: 4 scientists 185+ D-Index: 99 scientists
70 D-Index 185+

This scientist: 89 D-Index — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 185 D-Index or more.

Overview

Charles T. Rettner is affiliated with IBM (United States) and conducts research primarily in the fields of engineering and materials science. Their work intersects several subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, molecular biology, and cognitive neuroscience.

The scientist's research covers a range of topics, with notable focus on semiconductor materials and devices, advanced memory and neural computing, and electronic and structural properties of oxides. Additional topics in their research portfolio include advanced biosensing and bioanalysis techniques, DNA and nucleic acid chemistry, nanopore and nanochannel transport studies, and neuroscience and neural engineering.

Among recent publications are the following papers:

  • Precise pitch-scaling of carbon nanotube arrays within three-dimensional DNA nanotrenches, 2020, Science
  • A three-dimensional micro-electrode array for in-vitro neuronal interfacing, 2020, Journal of Neural Engineering
  • Surface Initiated Polymer Thin Films for the Area Selective Deposition and Etching of Metal Oxides, 2020, ACS Nano
  • Additive Lithography-Organic Monolayer Patterning Coupled with an Area-Selective Deposition, 2021, ACS Applied Materials & Interfaces
  • Spatial Control of the Self-assembled Block Copolymer Domain Orientation and Alignment on Photopatterned Surfaces, 2020, ACS Applied Materials & Interfaces

Frequent co-authors in their research include Noel Arellano, Teya Topuria, Holt Bui, Brian Hughes, and Rudy J. Wojtecki.

The scientist has published multiple papers in several journal venues, among which the most frequent are:

  • ACS Applied Materials & Interfaces
  • Science
  • Journal of Neural Engineering
  • ACS Nano
  • Nature Nanotechnology

Best Publications

  • Phase-change random access memory: a scalable technology

    S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner

  • Nanoscale Nuclear Magnetic Resonance with a Nitrogen-Vacancy Spin Sensor

    H. J. Mamin;M. Kim;M. Kim;M. H. Sherwood;C. T. Rettner

  • Current-controlled magnetic domain-wall nanowire shift register.

    Masamitsu Hayashi;Luc Thomas;Rai Moriya;Charles Rettner

  • Nanoscale magnetic resonance imaging

    C. L. Degen;M. Poggio;H. J. Mamin;C. T. Rettner

  • Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length

    Luc Thomas;Masamitsu Hayashi;Masamitsu Hayashi;Xin Jiang;Rai Moriya

  • Placement and orientation of individual DNA shapes on lithographically patterned surfaces

    Ryan J. Kershner;Ryan J. Kershner;Luisa D. Bozano;Christine M. Micheel;Christine M. Micheel;Albert M. Hung;Albert M. Hung

  • Dependence of current and field driven depinning of domain walls on their structure and chirality in permalloy nanowires

    Masamitsu Hayashi;Masamitsu Hayashi;Luc Thomas;Charles Rettner;Rai Moriya

  • Dense Self-Assembly on Sparse Chemical Patterns : Rectifying and Multiplying Lithographic Patterns Using Block Copolymers

    Joy Y. Cheng;Charles T. Rettner;Daniel P. Sanders;Ho-Cheol Kim

  • Direct observation of the coherent precession of magnetic domain walls propagating along permalloy nanowires

    Masamitsu Hayashi;Masamitsu Hayashi;Luc Thomas;Charles Rettner;Rai Moriya

  • Vibrational Promotion of Electron Transfer

    Yuhui Huang;Charles T. Rettner;Daniel J. Auerbach;Alec M. Wodtke

  • Influence of Current on Field-Driven Domain Wall Motion in Permalloy Nanowires from Time Resolved Measurements of Anisotropic Magnetoresistance

    M. Hayashi;M. Hayashi;L. Thomas;Ya. B. Bazaliy;C. Rettner

  • Quantum‐state‐specific dynamics of the dissociative adsorption and associative desorption of H2 at a Cu(111) surface

    C. T. Rettner;H. A. Michelsen;D. J. Auerbach

  • Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires.

    Masamitsu Hayashi;Masamitsu Hayashi;Luc Thomas;Charles Rettner;Rai Moriya

  • Effect of rotation on the translational and vibrational energy dependence of the dissociative adsorption of D2 on Cu(111)

    H. A. Michelsen;C. T. Rettner;D. J. Auerbach;R. N. Zare

  • Dissociative chemisorption of CH4 on W(110): Dramatic activation by initial kinetic energy.

    CT Rettner;HE Pfnür;DJ Auerbach

  • Role of vibrational and translational energy in the activated dissociative adsorption of D2 on Cu(111).

    C. T. Rettner;D. J. Auerbach;H. A. Michelsen

  • Observation of direct vibrational excitation in gas-surface collisions: NO on Ag(111).

    C. T. Rettner;F. Fabre;J. Kimman;D. J. Auerbach

  • Dynamics of the direct reaction of hydrogen atoms adsorbed on Cu(111) with hydrogen atoms incident from the gas phase.

    C. T. Rettner

  • Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

    Y. C. Chen;C. T. Rettner;S. Raoux;G. W. Burr

  • Dynamics of magnetic domain walls under their own inertia.

    Luc Thomas;Rai Moriya;Charles Rettner;Stuart S.P. Parkin

Frequent Co-Authors

Stuart S. P. Parkin
Stuart S. P. Parkin Max Planck Institute of Microstructure Physics
Daniel J. Auerbach
Daniel J. Auerbach Max Planck Society
Joy Cheng
Joy Cheng IBM (United States)
Ho-Cheol Kim
Ho-Cheol Kim IBM (United States)
Geoffrey W. Burr
Geoffrey W. Burr IBM (United States)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Donald S. Bethune
Donald S. Bethune IBM (United States)
Bruce David Terris
Bruce David Terris Western Digital (Japan)
Andrew J. Kellock
Andrew J. Kellock IBM (United States)
Mahesh G. Samant
Mahesh G. Samant IBM (United States)

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