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Materials Science

D-Index
85
Citations
43805
World Ranking
2118
National Ranking
13

Research.com Recognitions

  • Fellow of the Indian National Academy of Engineering (INAE)
  • Fellow of the Indian National Academy of Engineering (INAE)
  • Fellow of the Indian National Academy of Engineering (INAE)

Overview

Umesh V. Waghmare is affiliated with the Jawaharlal Nehru Centre for Advanced Scientific Research in India. Their research focuses primarily on materials science and engineering, with a significant emphasis on materials chemistry and electrical and electronic engineering. Waghmare's work spans various subfields including electronic, optical, and magnetic materials, atomic and molecular physics and optics, as well as condensed matter physics.

Their published work covers topics of advanced thermoelectric materials and devices, 2D materials and applications, and chalcogenide semiconductor thin films. Additional areas of study include perovskite materials and applications, topological materials and phenomena, multiferroics and related materials, and electrocatalysts for energy conversion.

Frequent collaborators of Waghmare include Kanishka Biswas, Raagya Arora, D. V. S. Muthu, A. K. Sood, and Koyendrila Debnath.

Common publication venues for Waghmare's research are:

  • Physical Review B
  • arXiv (Cornell University)
  • Journal of the American Chemical Society
  • Nanoscale
  • Angewandte Chemie International Edition

Significant recent papers authored or co-authored by Waghmare are:

  • Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe 2 (2021, Science)
  • Scale-free ferroelectricity induced by flat phonon bands in HfO 2 (2020, Science)
  • Intrinsically Ultralow Thermal Conductivity in Ruddlesden-Popper 2D Perovskite Cs2PbI2Cl2: Localized Anharmonic Vibrations and Dynamic Octahedral Distortions (2020, Journal of the American Chemical Society)
  • Berry curvature dipole senses topological transition in a moiré superlattice (2022, arXiv (Cornell University))
  • Ferroelectric Instability Induced Ultralow Thermal Conductivity and High Thermoelectric Performance in Rhombohedral p-Type GeSe Crystal (2020, Journal of the American Chemical Society)

Waghmare has been recognized as a Fellow of the Indian National Academy of Engineering (INAE).

Best Publications

  • Epitaxial BiFeO3 multiferroic thin film heterostructures.

    J. Wang;J. B. Neaton;H. Zheng;V. Nagarajan

  • Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

    A. Das;S. Pisana;B. Chakraborty;S. Piscanec

  • Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

    L. S. Panchakarla;K. S. Subrahmanyam;S. K. Saha;Achutharao Govindaraj

  • First-principles study of spontaneous polarization in multiferroic Bi Fe O 3

    J. B. Neaton;C. Ederer;U. V. Waghmare;N. A. Spaldin

  • Sensing behavior of atomically thin-layered MoS2 transistors

    Dattatray J. Late;Yi Kai Huang;Bin Liu;Jagaran Acharya;Jagaran Acharya

  • Symmetry-dependent phonon renormalization in monolayer MoS 2 transistor

    Biswanath Chakraborty;Achintya Bera;D. V. S. Muthu;Somnath Bhowmick

  • Accurate first-principles structures and energies of diversely bonded systems from an efficient density functional

    Jianwei Sun;Richard C. Remsing;Yubo Zhang;Zhaoru Sun

  • Graphene analogues of BN: novel synthesis and properties.

    Angshuman Nag;Kalyan Raidongia;Kailash P S S Hembram;Ranjan Datta

  • Response to Comment on "Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures"

    J. Wang;A. Scholl;H. Zheng;S. B. Ogale

  • Lattice dynamics of BaTiO 3 , PbTiO 3 , and PbZrO 3 : A comparative first-principles study

    Philippe Ghosez;E. Cockayne;U. V. Waghmare;K. M. Rabe

  • First principles based design and experimental evidence for a ZnO-based ferromagnet at room temperature.

    Marcel H. F. Sluiter;Y. Kawazoe;Parmanand Sharma;A. Inoue

  • Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe2.

    Subhajit Roychowdhury;Tanmoy Ghosh;Raagya Arora;Manisha Samanta

  • Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2.

    Sharmila N. Shirodkar;Umesh V. Waghmare

  • Mg Alloying in SnTe Facilitates Valence Band Convergence and Optimizes Thermoelectric Properties

    Ananya Banik;U. Sandhya Shenoy;Shashwat Anand;Umesh V. Waghmare

  • Scale-free ferroelectricity induced by flat phonon bands in HfO2.

    Hyun-Jae Lee;Minseong Lee;Kyoungjun Lee;Jinhyeong Jo

  • Near-room-temperature colossal magnetodielectricity and multiglass properties in partially disordered La2NiMnO6

    D. Choudhury;P. Mandal;Roland Mathieu;A. Hazarika

  • Theoretical Prediction of New High-Performance Lead-Free Piezoelectrics

    Pio Baettig;Charles F. Schelle;Richard Alan Lesar;Umesh V. Waghmare

  • First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb

    U. V. Waghmare;N. A. Spaldin;H. C. Kandpal;Ram Seshadri

  • Ab initio statistical mechanics of the ferroelectric phase transition in PbTiO 3

    U. V. Waghmare;K. M. Rabe

  • An improved d-band model of the catalytic activity of magnetic transition metal surfaces.

    Satadeep Bhattacharjee;Umesh V. Waghmare;Seung-Cheol Lee

  • Theoretical prediction of new high-performance lead-free ferroelectrics

    Pio Baettig;Charles Schelle;Nicola Spaldin;Richard LeSar

Frequent Co-Authors

C. N. R. Rao
C. N. R. Rao Jawaharlal Nehru Centre for Advanced Scientific Research
Kanishka Biswas
Kanishka Biswas Jawaharlal Nehru Centre for Advanced Scientific Research
Karin M. Rabe
Karin M. Rabe Rutgers, The State University of New Jersey
A. K. Sood
A. K. Sood Indian Institute of Science
A. Sundaresan
A. Sundaresan Jawaharlal Nehru Centre for Advanced Scientific Research
Upadrasta Ramamurty
Upadrasta Ramamurty Nanyang Technological University
Yoshiyuki Kawazoe
Yoshiyuki Kawazoe Tohoku University
Efthimios Kaxiras
Efthimios Kaxiras Harvard University
D. D. Sarma
D. D. Sarma Indian Institute of Science

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