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Materials Science

D-Index
85
Citations
43805
World Ranking
2116
National Ranking
13

Umesh V. Waghmare publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Umesh V. Waghmare sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 476 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Umesh V. Waghmare D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Umesh V. Waghmare sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 85 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • Fellow of the Indian National Academy of Engineering (INAE)
  • Fellow of the Indian National Academy of Engineering (INAE)
  • Fellow of the Indian National Academy of Engineering (INAE)
  • Fellow of the Indian National Academy of Engineering (INAE)
  • Fellow of the Indian National Academy of Engineering (INAE)

Overview

Umesh V. Waghmare is affiliated with the Jawaharlal Nehru Centre for Advanced Scientific Research in India. Their research focuses primarily on materials science and engineering, with a significant emphasis on materials chemistry and electrical and electronic engineering. Waghmare's work spans various subfields including electronic, optical, and magnetic materials, atomic and molecular physics and optics, as well as condensed matter physics.

Their published work covers topics of advanced thermoelectric materials and devices, 2D materials and applications, and chalcogenide semiconductor thin films. Additional areas of study include perovskite materials and applications, topological materials and phenomena, multiferroics and related materials, and electrocatalysts for energy conversion.

Frequent collaborators of Waghmare include Kanishka Biswas, Raagya Arora, D. V. S. Muthu, A. K. Sood, and Koyendrila Debnath.

Common publication venues for Waghmare's research are:

  • Physical Review B
  • arXiv (Cornell University)
  • Journal of the American Chemical Society
  • Nanoscale
  • Angewandte Chemie International Edition

Significant recent papers authored or co-authored by Waghmare are:

  • Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe 2 (2021, Science)
  • Scale-free ferroelectricity induced by flat phonon bands in HfO 2 (2020, Science)
  • Intrinsically Ultralow Thermal Conductivity in Ruddlesden-Popper 2D Perovskite Cs2PbI2Cl2: Localized Anharmonic Vibrations and Dynamic Octahedral Distortions (2020, Journal of the American Chemical Society)
  • Berry curvature dipole senses topological transition in a moiré superlattice (2022, arXiv (Cornell University))
  • Ferroelectric Instability Induced Ultralow Thermal Conductivity and High Thermoelectric Performance in Rhombohedral p-Type GeSe Crystal (2020, Journal of the American Chemical Society)

Waghmare has been recognized as a Fellow of the Indian National Academy of Engineering (INAE).

Best Publications

  • Epitaxial BiFeO3 multiferroic thin film heterostructures.

    J. Wang;J. B. Neaton;H. Zheng;V. Nagarajan

  • Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

    A. Das;S. Pisana;B. Chakraborty;S. Piscanec

  • Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

    L. S. Panchakarla;K. S. Subrahmanyam;S. K. Saha;Achutharao Govindaraj

  • First-principles study of spontaneous polarization in multiferroic Bi Fe O 3

    J. B. Neaton;C. Ederer;U. V. Waghmare;N. A. Spaldin

  • Sensing behavior of atomically thin-layered MoS2 transistors

    Dattatray J. Late;Yi Kai Huang;Bin Liu;Jagaran Acharya;Jagaran Acharya

  • Symmetry-dependent phonon renormalization in monolayer MoS 2 transistor

    Biswanath Chakraborty;Achintya Bera;D. V. S. Muthu;Somnath Bhowmick

  • Accurate first-principles structures and energies of diversely bonded systems from an efficient density functional

    Jianwei Sun;Richard C. Remsing;Yubo Zhang;Zhaoru Sun

  • Graphene analogues of BN: novel synthesis and properties.

    Angshuman Nag;Kalyan Raidongia;Kailash P S S Hembram;Ranjan Datta

  • Response to Comment on "Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures"

    J. Wang;A. Scholl;H. Zheng;S. B. Ogale

  • Lattice dynamics of BaTiO 3 , PbTiO 3 , and PbZrO 3 : A comparative first-principles study

    Philippe Ghosez;E. Cockayne;U. V. Waghmare;K. M. Rabe

  • First principles based design and experimental evidence for a ZnO-based ferromagnet at room temperature.

    Marcel H. F. Sluiter;Y. Kawazoe;Parmanand Sharma;A. Inoue

  • Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe2.

    Subhajit Roychowdhury;Tanmoy Ghosh;Raagya Arora;Manisha Samanta

  • Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2.

    Sharmila N. Shirodkar;Umesh V. Waghmare

  • Mg Alloying in SnTe Facilitates Valence Band Convergence and Optimizes Thermoelectric Properties

    Ananya Banik;U. Sandhya Shenoy;Shashwat Anand;Umesh V. Waghmare

  • Scale-free ferroelectricity induced by flat phonon bands in HfO2.

    Hyun-Jae Lee;Minseong Lee;Kyoungjun Lee;Jinhyeong Jo

  • Near-room-temperature colossal magnetodielectricity and multiglass properties in partially disordered La2NiMnO6

    D. Choudhury;P. Mandal;Roland Mathieu;A. Hazarika

  • Theoretical Prediction of New High-Performance Lead-Free Piezoelectrics

    Pio Baettig;Charles F. Schelle;Richard Alan Lesar;Umesh V. Waghmare

  • First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb

    U. V. Waghmare;N. A. Spaldin;H. C. Kandpal;Ram Seshadri

  • Ab initio statistical mechanics of the ferroelectric phase transition in PbTiO 3

    U. V. Waghmare;K. M. Rabe

  • An improved d-band model of the catalytic activity of magnetic transition metal surfaces.

    Satadeep Bhattacharjee;Umesh V. Waghmare;Seung-Cheol Lee

  • Theoretical prediction of new high-performance lead-free ferroelectrics

    Pio Baettig;Charles Schelle;Nicola Spaldin;Richard LeSar

Frequent Co-Authors

C. N. R. Rao
C. N. R. Rao Jawaharlal Nehru Centre for Advanced Scientific Research
Kanishka Biswas
Kanishka Biswas Jawaharlal Nehru Centre for Advanced Scientific Research
Karin M. Rabe
Karin M. Rabe Rutgers, The State University of New Jersey
A. K. Sood
A. K. Sood Indian Institute of Science
A. Sundaresan
A. Sundaresan Jawaharlal Nehru Centre for Advanced Scientific Research
Upadrasta Ramamurty
Upadrasta Ramamurty Nanyang Technological University
Yoshiyuki Kawazoe
Yoshiyuki Kawazoe Tohoku University
Efthimios Kaxiras
Efthimios Kaxiras Harvard University
D. D. Sarma
D. D. Sarma Indian Institute of Science

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