D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 50 Citations 10,156 167 World Ranking 6994 National Ranking 1894

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Mechanical engineering
  • Semiconductor

His primary areas of study are Silicon, Optoelectronics, Doping, Amorphous silicon and Absorption. His Silicon research is multidisciplinary, relying on both Amorphous solid, Passivation, Nanocrystalline silicon, Analytical chemistry and Band gap. His Optoelectronics research incorporates themes from Crystal growth, Layer, Substrate, Etching and Laser.

His Layer study deals with Surface roughness intersecting with Lithography and Optics. The various areas that David K. Biegelsen examines in his Amorphous silicon study include Luminescence, Molecular physics, Dangling bond and Photochemistry. His Absorption study combines topics in areas such as Chalcogenide glass, Chalcogenide and Crystallographic defect.

His most cited work include:

  • Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy. (481 citations)
  • Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution (293 citations)
  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires (254 citations)

What are the main themes of his work throughout his whole career to date?

David K. Biegelsen spends much of his time researching Optoelectronics, Silicon, Substrate, Composite material and Optics. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Substrate, Electrode, Electronic engineering and Reactive-ion etching. His Silicon research includes elements of Epitaxy, Crystallography, Thin film, Nanocrystalline silicon and Analytical chemistry.

His research integrates issues of Inkwell and Electrical engineering in his study of Substrate. His work in Inkwell tackles topics such as Lithography which are related to areas like Nanotechnology. The Amorphous silicon study which covers Atomic physics that intersects with Doping.

He most often published in these fields:

  • Optoelectronics (23.57%)
  • Silicon (16.07%)
  • Substrate (13.57%)

What were the highlights of his more recent work (between 2011-2021)?

  • Substrate (13.57%)
  • Inkwell (10.00%)
  • Optoelectronics (23.57%)

In recent papers he was focusing on the following fields of study:

David K. Biegelsen focuses on Substrate, Inkwell, Optoelectronics, Composite material and Lithography. He focuses mostly in the field of Substrate, narrowing it down to topics relating to Electrical engineering and, in certain cases, Force field and Generator. His work in Inkwell addresses issues such as Image, which are connected to fields such as Optics and Wetting.

David K. Biegelsen works in the field of Optoelectronics, namely Dielectric layer. His study in the fields of Viscosity and Electromagnetic shielding under the domain of Composite material overlaps with other disciplines such as Temperature gradient and Threshold temperature. His Lithography research integrates issues from Air layer and Engineering drawing.

Between 2011 and 2021, his most popular works were:

  • Method for direct application of dampening fluid for a variable data lithographic apparatus (12 citations)
  • Open and closed loop manipulation of charged microchiplets in an electric field (12 citations)
  • Polysensing bioelectronic test plate (11 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Semiconductor
  • Mechanical engineering

The scientist’s investigation covers issues in Substrate, Inkwell, Lithography, Image and Optics. His Substrate study is concerned with the field of Composite material as a whole. The concepts of his Inkwell study are interwoven with issues in Transverse plane, Wavelength, Mechanical engineering and Common emitter.

David K. Biegelsen has researched Lithography in several fields, including Stripping, Mechanics and Ribbon. David K. Biegelsen is investigating Computer vision and Artificial intelligence as part of his examination of Image. His biological study focuses on Scanner.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.

D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz.
Physical Review B (1990)

855 Citations

Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution

Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan.
Journal of Applied Physics (1984)

433 Citations

Luminescence studies of plasma-deposited hydrogenated silicon

R. A. Street;J. C. Knights;D. K. Biegelsen.
Physical Review B (1978)

426 Citations

Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson.
Applied Physics Letters (1994)

397 Citations

Detailed investigation of doping in hydrogenated amorphous silicon and germanium.

M Stutzmann;DK Biegelsen;RA Street.
Physical Review B (1987)

364 Citations

Silicon surface passivation by hydrogen termination: A comparative study of preparation methods

D. B. Fenner;D. K. Biegelsen;R. D. Bringans.
Journal of Applied Physics (1989)

352 Citations

Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.

D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz.
Physical Review Letters (1990)

349 Citations

Defect states in doped and compensated a -Si: H

R. A. Street;D. K. Biegelsen;J. C. Knights.
Physical Review B (1981)

339 Citations

Deuterium passivation of grain-boundary dangling bonds in silicon thin films

N. M. Johnson;D. K. Biegelsen;M. D. Moyer.
Applied Physics Letters (1982)

310 Citations

Hydrogen evolution and defect creation in amorphous Si: H alloys

D. K. Biegelsen;R. A. Street;C. C. Tsai;J. C. Knights.
Physical Review B (1979)

302 Citations

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