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D-Index & Metrics

Materials Science

D-Index
57
Citations
12427
World Ranking
7931
National Ranking
1969

David K. Biegelsen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where David K. Biegelsen sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 204 publications — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

David K. Biegelsen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where David K. Biegelsen sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

David K. Biegelsen is a researcher affiliated with the Palo Alto Research Center in the United States. Their work aligns with a professional environment known for advancing innovations in computing and technology research.

The available data does not list specific research papers authored by David K. Biegelsen. There is also no information on frequent co-authors, which implies that collaboration patterns are not recorded here.

Details on publication venues are not provided, so insights into the preferred or common conferences and journals where they publish are unavailable. Similarly, there is no data about book publications or involvement with publishers.

Information about the scientist's main fields of study, subfields, and main topics of work is not included, limiting the ability to specify their research focus areas or scientific domains.

No awards or honors have been recorded in this profile, with no date or citation details available. They are currently living, as indicated by the data.

Best Publications

  • Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.

    D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz

  • Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution

    Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan

  • Luminescence studies of plasma-deposited hydrogenated silicon

    R. A. Street;J. C. Knights;D. K. Biegelsen

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • Detailed investigation of doping in hydrogenated amorphous silicon and germanium.

    M Stutzmann;DK Biegelsen;RA Street

  • Silicon surface passivation by hydrogen termination: A comparative study of preparation methods

    D. B. Fenner;D. K. Biegelsen;R. D. Bringans

  • Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.

    D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz

  • Defect states in doped and compensated a -Si: H

    R. A. Street;D. K. Biegelsen;J. C. Knights

  • Deuterium passivation of grain-boundary dangling bonds in silicon thin films

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer

  • Hydrogen evolution and defect creation in amorphous Si: H alloys

    D. K. Biegelsen;R. A. Street;C. C. Tsai;J. C. Knights

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • Apparatus for moving fluid by using electrostatic force

    Alan G Bell;David K Biegelsen;John L Dunec;Scott A Elrod

  • Stretchable interconnects using stress gradient films

    David Kalman Biegelsen;David Fork;James Reich

  • Characteristic electronic defects at the Si‐SiO2 interface

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer;S. T. Chang

  • Luminescence and ESR studies of defects in hydrogenated amorphous silicon

    R.A Street;D.K Biegelsen

  • Photoinduced Defects in Chalcogenide Glasses

    D. K. Biegelsen;R. A. Street

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • Initial stages of epitaxial growth of GaAs on (100) silicon

    D. K. Biegelsen;F. A. Ponce;A. J. Smith;J. C. Tramontana

  • FLEXIBLE SHEET HANDLING DEVICE, REVERSING MODULE, AND REVERSING METHOD FOR REVERSING FLEXIBLE SHEET

    Jackson Warren B;Biegelsen David K;Daniel G Boburo

  • VALVE AND VALVE ARRAY

    Biegelsen David K;Jackson Warren B;Cheung Patrick C P;Yim Mark H

  • Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy [Phys. Rev. B 41, 5701 (1990)]

    D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L. E. Swartz

Frequent Co-Authors

Robert A. Street
Robert A. Street Palo Alto Research Center
Mark Yim
Mark Yim University of Pennsylvania
Fernando Ponce
Fernando Ponce Arizona State University
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Daniel G. Bobrow
Daniel G. Bobrow Palo Alto Research Center
John E. Northrup
John E. Northrup Palo Alto Research Center
David K. Fork
David K. Fork Palo Alto Research Center
Robert Nemanich
Robert Nemanich Arizona State University
Michael Kneissl
Michael Kneissl Technical University of Berlin
Warren B. Jackson
Warren B. Jackson Palo Alto Research Center

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