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Materials Science

D-Index
57
Citations
12427
World Ranking
7933
National Ranking
1971

Overview

David K. Biegelsen is a researcher affiliated with the Palo Alto Research Center in the United States. Their work aligns with a professional environment known for advancing innovations in computing and technology research.

The available data does not list specific research papers authored by David K. Biegelsen. There is also no information on frequent co-authors, which implies that collaboration patterns are not recorded here.

Details on publication venues are not provided, so insights into the preferred or common conferences and journals where they publish are unavailable. Similarly, there is no data about book publications or involvement with publishers.

Information about the scientist's main fields of study, subfields, and main topics of work is not included, limiting the ability to specify their research focus areas or scientific domains.

No awards or honors have been recorded in this profile, with no date or citation details available. They are currently living, as indicated by the data.

Best Publications

  • Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.

    D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz

  • Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution

    Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan

  • Luminescence studies of plasma-deposited hydrogenated silicon

    R. A. Street;J. C. Knights;D. K. Biegelsen

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • Detailed investigation of doping in hydrogenated amorphous silicon and germanium.

    M Stutzmann;DK Biegelsen;RA Street

  • Silicon surface passivation by hydrogen termination: A comparative study of preparation methods

    D. B. Fenner;D. K. Biegelsen;R. D. Bringans

  • Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.

    D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz

  • Defect states in doped and compensated a -Si: H

    R. A. Street;D. K. Biegelsen;J. C. Knights

  • Deuterium passivation of grain-boundary dangling bonds in silicon thin films

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer

  • Hydrogen evolution and defect creation in amorphous Si: H alloys

    D. K. Biegelsen;R. A. Street;C. C. Tsai;J. C. Knights

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • Apparatus for moving fluid by using electrostatic force

    Alan G Bell;David K Biegelsen;John L Dunec;Scott A Elrod

  • Stretchable interconnects using stress gradient films

    David Kalman Biegelsen;David Fork;James Reich

  • Characteristic electronic defects at the Si‐SiO2 interface

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer;S. T. Chang

  • Luminescence and ESR studies of defects in hydrogenated amorphous silicon

    R.A Street;D.K Biegelsen

  • Photoinduced Defects in Chalcogenide Glasses

    D. K. Biegelsen;R. A. Street

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • Initial stages of epitaxial growth of GaAs on (100) silicon

    D. K. Biegelsen;F. A. Ponce;A. J. Smith;J. C. Tramontana

  • FLEXIBLE SHEET HANDLING DEVICE, REVERSING MODULE, AND REVERSING METHOD FOR REVERSING FLEXIBLE SHEET

    Jackson Warren B;Biegelsen David K;Daniel G Boburo

  • VALVE AND VALVE ARRAY

    Biegelsen David K;Jackson Warren B;Cheung Patrick C P;Yim Mark H

  • Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy [Phys. Rev. B 41, 5701 (1990)]

    D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L. E. Swartz

Frequent Co-Authors

Robert A. Street
Robert A. Street Palo Alto Research Center
Mark Yim
Mark Yim University of Pennsylvania
Fernando Ponce
Fernando Ponce Arizona State University
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Daniel G. Bobrow
Daniel G. Bobrow Palo Alto Research Center
John E. Northrup
John E. Northrup Palo Alto Research Center
David K. Fork
David K. Fork Palo Alto Research Center
Robert Nemanich
Robert Nemanich Arizona State University
Michael Kneissl
Michael Kneissl Technical University of Berlin
Warren B. Jackson
Warren B. Jackson Palo Alto Research Center

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