His primary areas of study are Silicon, Optoelectronics, Doping, Amorphous silicon and Absorption. His Silicon research is multidisciplinary, relying on both Amorphous solid, Passivation, Nanocrystalline silicon, Analytical chemistry and Band gap. His Optoelectronics research incorporates themes from Crystal growth, Layer, Substrate, Etching and Laser.
His Layer study deals with Surface roughness intersecting with Lithography and Optics. The various areas that David K. Biegelsen examines in his Amorphous silicon study include Luminescence, Molecular physics, Dangling bond and Photochemistry. His Absorption study combines topics in areas such as Chalcogenide glass, Chalcogenide and Crystallographic defect.
David K. Biegelsen spends much of his time researching Optoelectronics, Silicon, Substrate, Composite material and Optics. His Optoelectronics study integrates concerns from other disciplines, such as Layer, Substrate, Electrode, Electronic engineering and Reactive-ion etching. His Silicon research includes elements of Epitaxy, Crystallography, Thin film, Nanocrystalline silicon and Analytical chemistry.
His research integrates issues of Inkwell and Electrical engineering in his study of Substrate. His work in Inkwell tackles topics such as Lithography which are related to areas like Nanotechnology. The Amorphous silicon study which covers Atomic physics that intersects with Doping.
David K. Biegelsen focuses on Substrate, Inkwell, Optoelectronics, Composite material and Lithography. He focuses mostly in the field of Substrate, narrowing it down to topics relating to Electrical engineering and, in certain cases, Force field and Generator. His work in Inkwell addresses issues such as Image, which are connected to fields such as Optics and Wetting.
David K. Biegelsen works in the field of Optoelectronics, namely Dielectric layer. His study in the fields of Viscosity and Electromagnetic shielding under the domain of Composite material overlaps with other disciplines such as Temperature gradient and Threshold temperature. His Lithography research integrates issues from Air layer and Engineering drawing.
The scientist’s investigation covers issues in Substrate, Inkwell, Lithography, Image and Optics. His Substrate study is concerned with the field of Composite material as a whole. The concepts of his Inkwell study are interwoven with issues in Transverse plane, Wavelength, Mechanical engineering and Common emitter.
David K. Biegelsen has researched Lithography in several fields, including Stripping, Mechanics and Ribbon. David K. Biegelsen is investigating Computer vision and Artificial intelligence as part of his examination of Image. His biological study focuses on Scanner.
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Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.
D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz.
Physical Review B (1990)
Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution
Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan.
Journal of Applied Physics (1984)
Luminescence studies of plasma-deposited hydrogenated silicon
R. A. Street;J. C. Knights;D. K. Biegelsen.
Physical Review B (1978)
Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires
H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson.
Applied Physics Letters (1994)
Detailed investigation of doping in hydrogenated amorphous silicon and germanium.
M Stutzmann;DK Biegelsen;RA Street.
Physical Review B (1987)
Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
D. B. Fenner;D. K. Biegelsen;R. D. Bringans.
Journal of Applied Physics (1989)
Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.
D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz.
Physical Review Letters (1990)
Defect states in doped and compensated a -Si: H
R. A. Street;D. K. Biegelsen;J. C. Knights.
Physical Review B (1981)
Deuterium passivation of grain-boundary dangling bonds in silicon thin films
N. M. Johnson;D. K. Biegelsen;M. D. Moyer.
Applied Physics Letters (1982)
Hydrogen evolution and defect creation in amorphous Si: H alloys
D. K. Biegelsen;R. A. Street;C. C. Tsai;J. C. Knights.
Physical Review B (1979)
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