World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
8972
World Ranking
2558
National Ranking
71

Materials Science

D-Index
55
Citations
9534
World Ranking
8681
National Ranking
368

Tae-Wook Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tae-Wook Kim sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 189 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tae-Wook Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tae-Wook Kim sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tae-Wook Kim is affiliated with Jeonbuk National University in South Korea and has a research focus primarily in engineering and materials science. Their work spans several subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, polymers and plastics, and electronic, optical, and magnetic materials.

The scientist's research topics cover a range of advanced materials and applications. These include:

  • Advanced Sensor and Energy Harvesting Materials
  • Conducting polymers and applications
  • Graphene research and applications
  • Advanced Memory and Neural Computing
  • Perovskite Materials and Applications
  • Electromagnetic wave absorption materials
  • 2D Materials and Applications

Their frequent co-authors include Sukang Bae, Seoung-Ki Lee, Sang Hyun Lee, Byung Joon Moon, and Seok-Ki Hyeong, with collaboration counts ranging from 11 to 34 joint publications.

Publication venues where Tae-Wook Kim has contributed multiple works include:

  • SSRN Electronic Journal (8 publications)
  • Advanced Materials (5 publications)
  • ACS Nano (4 publications)
  • Carbon Letters (4 publications)
  • Nature Communications (3 publications)

Some of their recent papers are:

  • One-dimensional organic artificial multi-synapses enabling electronic textile neural network for wearable neuromorphic applications, 2020, Science Advances
  • Hierarchical Porous Film with Layer-by-Layer Assembly of 2D Copper Nanosheets for Ultimate Electromagnetic Interference Shielding, 2021, ACS Nano
  • Shallow and Deep Trap State Passivation for Low-Temperature Processed Perovskite Solar Cells, 2020, ACS Energy Letters
  • Laser-directed synthesis of strain-induced crumpled MoS2 structure for enhanced triboelectrification toward haptic sensors, 2020, Nano Energy
  • Integration of multiple electronic components on a microfibre towards an emerging electronic textile platform, 2022, Nature Communications

Best Publications

  • Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

    Byungjin Cho;Sunghun Song;Yongsung Ji;Tae-Wook Kim

  • Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes.

    Gunho Jo;Minhyeok Choe;Chu-Young Cho;Jin Ho Kim

  • Evolution of nanomorphology and anisotropic conductivity in solvent-modified PEDOT:PSS films for polymeric anodes of polymer solar cells

    Seok In Na;Gunuk Wang;Seok Soon Kim;Tae Wook Kim

  • Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3

    Tae Wook Kim;Chang Hee Cho;Baek Hyun Kim;Seong Ju Park

  • Three-dimensional integration of organic resistive memory devices

    Sunghoon Song;Byungjin Cho;Tae Wook Kim;Yongsung Ji

  • Significant vertical phase separation in solvent-vapor-annealed poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) composite films leading to better conductivity and work function for high-performance indium tin oxide-free optoelectronics.

    Jun-Seok Yeo;Jin-Mun Yun;Jin-Mun Yun;Dong-Yu Kim;Sungjun Park

  • Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

    Byungjin Cho;Tae-Wook Kim;Tae-Wook Kim;Sunghoon Song;Yongsung Ji

  • A new approach for molecular electronic junctions with a multilayer graphene electrode.

    Gunuk Wang;Yonghun Kim;Minhyeok Choe;Tae Wook Kim

  • Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

    Yongsung Ji;David F. Zeigler;Dong Su Lee;Hyejung Choi

  • Stable switching characteristics of organic nonvolatile memory on a bent flexible substrate.

    Yongsung Ji;Byungjin Cho;Sunghoon Song;Tae-Wook Kim

  • Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4

    Baek Hyun Kim;Chang Hee Cho;Tae Wook Kim;Nae Man Park;Nae Man Park

  • One-dimensional organic artificial multi-synapses enabling electronic textile neural network for wearable neuromorphic applications

    Seonggil Ham;Minji Kang;Seonghoon Jang;Jingon Jang

  • Statistical analysis of electronic properties of alkanethiols in metal?molecule?metal junctions

    Tae Wook Kim;Gunuk Wang;Hyoyoung Lee;Takhee Lee

  • In situ preparation of a La1.2Sr0.8Mn0.4Fe0.6O4 Ruddlesden–Popper phase with exsolved Fe nanoparticles as an anode for SOFCs

    Yong Sik Chung;Taewook Kim;Tae Ho Shin;Heechul Yoon

  • Hierarchical Porous Film with Layer-by-Layer Assembly of 2D Copper Nanosheets for Ultimate Electromagnetic Interference Shielding.

    Ho Kwang Choi;Aram Lee;Mina Park;Dong Su Lee

  • Ultrathin Conformable Organic Artificial Synapse for Wearable Intelligent Device Applications.

    Sukjae Jang;Seonghoon Jang;Eun Hye Lee;Minji Kang

  • High‐Efficiency Photovoltaic Devices using Trap‐Controlled Quantum‐Dot Ink prepared via Phase‐Transfer Exchange

    Havid Aqoma;Muhibullah Al Mubarok;Wisnu Tantyo Hadmojo;Eun-Hye Lee

  • Flexible Nanoporous WO3–x Nonvolatile Memory Device

    Yongsung Ji;Yang Yang;Seoung-Ki Lee;Gedeng Ruan

  • Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates

    Soon-Shin Kwon;Woong-Ki Hong;Gunho Jo;Jongsun Maeng

  • Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.

    Soo-Ghang Ihn;Jong-In Song;Tae-Wook Kim;Dong-Seok Leem

  • Unipolar nonvolatile memory devices with composites of poly(9-vinylcarbazole) and titanium dioxide nanoparticles

    Byungjin Cho;Tae Wook Kim;Minhyeok Choe;Gunuk Wang

Frequent Co-Authors

Takhee Lee
Takhee Lee Seoul National University
Gunuk Wang
Gunuk Wang Korea University
Sukang Bae
Sukang Bae Korea Institute of Science and Technology
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Dong-Yu Kim
Dong-Yu Kim Gwangju Institute of Science and Technology
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Seok-In Na
Seok-In Na Jeonbuk National University
Alex K.-Y. Jen
Alex K.-Y. Jen City University of Hong Kong
Woong-Ki Hong
Woong-Ki Hong Gwangju Institute of Science and Technology
Seong-Ju Park
Seong-Ju Park Gwangju Institute of Science and Technology

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