World's Best Scientists 2026 revealed!
Gunuk Wang

Gunuk Wang

D-Index & Metrics

Materials Science

D-Index
43
Citations
6415
World Ranking
12371
National Ranking
563

Gunuk Wang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gunuk Wang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 113 publications — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gunuk Wang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gunuk Wang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gunuk Wang is affiliated with Korea University in South Korea and specializes in the field of engineering, with a strong focus on electrical and electronic engineering. Their research contributions cover several subfields that include electrical and electronic engineering, cellular and molecular neuroscience, polymers and plastics, materials chemistry, and biomedical engineering.

The scientist's main research interests center around topics such as advanced memory and neural computing, ferroelectric and negative capacitance devices, neuroscience and neural engineering, perovskite materials and their applications, advanced sensors and energy harvesting materials, conducting polymers and their applications, as well as photoreceptor and optogenetics research.

Gunuk Wang has authored several papers in prominent journals across these domains. Some notable publications include:

  • Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing (2020, Advanced Materials)
  • One-dimensional organic artificial multi-synapses enabling electronic textile neural network for wearable neuromorphic applications (2020, Science Advances)
  • Retina-Inspired Structurally Tunable Synaptic Perovskite Nanocones (2021, Advanced Functional Materials)
  • Integration of multiple electronic components on a microfibre towards an emerging electronic textile platform (2022, Nature Communications)
  • Artificially Intelligent Tactile Ferroelectric Skin (2020, Advanced Science)

Their frequent collaborators include Sanghyeon Choi, Jingon Jang, Seonghoon Jang, Jung Sun Eo, and Chul-Ho Lee. This network of coauthors reflects sustained cooperative research efforts.

Gunuk Wang's work often appears in scientific journals such as Advanced Science, Advanced Functional Materials, Advanced Materials, Nature Communications, and Nature Electronics. These publications highlight an established presence within several leading research venues.

Best Publications

  • Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing.

    Sanghyeon Choi;Jehyeon Yang;Gunuk Wang

  • Evolution of nanomorphology and anisotropic conductivity in solvent-modified PEDOT:PSS films for polymeric anodes of polymer solar cells

    Seok In Na;Gunuk Wang;Seok Soon Kim;Tae Wook Kim

  • High thermal conductivity of suspended few-layer hexagonal boron nitride sheets

    Haiqing Zhou;Haiqing Zhou;Jixin Zhu;Jixin Zhu;Zheng Liu;Zheng Yan

  • Three-dimensional integration of organic resistive memory devices

    Sunghoon Song;Byungjin Cho;Tae Wook Kim;Yongsung Ji

  • Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine-Facilitated Synaptic Activity

    Seonggil Ham;Sanghyeon Choi;Haein Cho;Seok In Na

  • A new approach for molecular electronic junctions with a multilayer graphene electrode.

    Gunuk Wang;Yonghun Kim;Minhyeok Choe;Tae Wook Kim

  • Flexible molecular-scale electronic devices

    Sungjun Park;Gunuk Wang;Gunuk Wang;Byungjin Cho;Byungjin Cho;Yonghun Kim

  • Synaptic Barristor Based on Phase-Engineered 2D Heterostructures

    Woong Huh;Seonghoon Jang;Jae Yoon Lee;Donghun Lee

  • Three-dimensional nanoporous Fe2O3/Fe3C-graphene heterogeneous thin films for lithium-ion batteries

    Yang Yang;Xiujun Fan;Xiujun Fan;Gilberto Casillas;Zhiwei Peng

  • One-dimensional organic artificial multi-synapses enabling electronic textile neural network for wearable neuromorphic applications

    Seonggil Ham;Minji Kang;Seonghoon Jang;Jingon Jang

  • Statistical analysis of electronic properties of alkanethiols in metal?molecule?metal junctions

    Tae Wook Kim;Gunuk Wang;Hyoyoung Lee;Takhee Lee

  • Enhanced electrocatalysis for hydrogen evolution reactions from WS 2 nanoribbons

    Jian Lin;Zhiwei Peng;Gunuk Wang;Dante Zakhidov

  • Ultrathin Conformable Organic Artificial Synapse for Wearable Intelligent Device Applications.

    Sukjae Jang;Seonghoon Jang;Eun Hye Lee;Minji Kang

  • Enhanced charge injection in pentacene field-effect transistors with graphene electrodes.

    Sangchul Lee;Gunho Jo;Seok Ju Kang;Gunuk Wang

  • Flexible Three-Dimensional Nanoporous Metal-Based Energy Devices

    Yang Yang;Gedeng Ruan;Changsheng Xiang;Gunuk Wang

  • Tuning of a graphene-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure

    Gunho Jo;Seok In Na;Seung Hwan Oh;Sangchul Lee

  • A self-rectifying TaOy/nanoporous TaOx memristor synaptic array for learning and energy-efficient neuromorphic systems

    Sanghyeon Choi;Seonghoon Jang;Jung Hwan Moon;Jong Chan Kim

  • Unipolar nonvolatile memory devices with composites of poly(9-vinylcarbazole) and titanium dioxide nanoparticles

    Byungjin Cho;Tae Wook Kim;Minhyeok Choe;Gunuk Wang

  • One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications

    Tae Wook Kim;Hyejung Choi;Seung Hwan Oh;Gunuk Wang

  • Large Hexagonal Bi‐ and Trilayer Graphene Single Crystals with Varied Interlayer Rotations

    Zheng Yan;Yuanyue Liu;Long Ju;Zhiwei Peng

Frequent Co-Authors

Takhee Lee
Takhee Lee Seoul National University
Tae-Wook Kim
Tae-Wook Kim Jeonbuk National University
James M. Tour
James M. Tour Rice University
Dong-Yu Kim
Dong-Yu Kim Gwangju Institute of Science and Technology
Yang Yang
Yang Yang University of Central Florida
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Sukang Bae
Sukang Bae Korea Institute of Science and Technology
Seok-In Na
Seok-In Na Jeonbuk National University
Zhiwei Peng
Zhiwei Peng City University of Hong Kong
Byung Jin Cho
Byung Jin Cho Chungbuk National University

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