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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 49 10615 10254 129 128 246 7888

Wen-Feng Hsieh publications per year

The chart shows the history of publications by Wen-Feng Hsieh between 1987 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Wen-Feng Hsieh published across 35 years, from 1987 to 2021, averaging 8.7 papers a year. Output peaked at 25 publications in 2009. 5 of the 304 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1987 to 2021. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2009. 1987: 4 publications 1988: 2 publications 1989: 1 publication 1990: 1 publication 1991: 6 publications 1992: 2 publications 1993: 3 publications 1994: 4 publications 1995: 2 publications 1996: 2 publications 1997: 1 publication 1998: 4 publications 1999: 4 publications 2000: 3 publications 2001: 9 publications 2002: 8 publications 2003: 10 publications 2004: 14 publications 2005: 20 publications 2006: 14 publications 2007: 17 publications 2008: 18 publications 2009: 25 publications 2010: 15 publications 2011: 20 publications 2012: 20 publications 2013: 21 publications 2014: 7 publications 2015: 12 publications 2016: 16 publications 2017: 2 publications 2018: 6 publications 2019: 6 publications 2020: 2 publications 2021: 3 publications
1987 2021

304 publications in total across all disciplines

View publications per year as a table
Wen-Feng Hsieh: publications per year, 1987 to 2021
Year Publications
1987 4
1988 2
1989 1
1990 1
1991 6
1992 2
1993 3
1994 4
1995 2
1996 2
1997 1
1998 4
1999 4
2000 3
2001 9
2002 8
2003 10
2004 14
2005 20
2006 14
2007 17
2008 18
2009 25
2010 15
2011 20
2012 20
2013 21
2014 7
2015 12
2016 16
2017 2
2018 6
2019 6
2020 2
2021 3
Total 304
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Wen-Feng Hsieh publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wen-Feng Hsieh sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 230–249 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 246 publications — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766 246
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Wen-Feng Hsieh D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wen-Feng Hsieh sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 48–49 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598 49
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Wen-Feng Hsieh is affiliated with National Yang Ming Chiao Tung University in Taiwan and is engaged in research primarily within the fields of Materials Science and Physics and Astronomy. Their work focuses on various subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Electrical and Electronic Engineering.

The scientist's research prominently addresses topics related to ZnO doping and properties, Ga2O3 and related materials, GaN-based semiconductor devices and materials, Perovskite Materials and Applications, as well as Quantum Dots Synthesis and Properties.

Recent publications by Wen-Feng Hsieh include:

  • Observation of anomalous emissions of nonpolar a-plane MgZnO and ZnO epi-films based on XEOL and time-resolved XEOL in hybrid bunch mode, 2020, AIP Advances
  • Optical anisotropy of interface-bound exciton emission in a-plane ZnO/Zn1-xMgxO MQWs with Zn1-yMgyO buffer layer, 2020, Applied Surface Science
  • Anisotropic optical gains in a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown via pulsed-laser deposition, 2021, Applied Surface Science

The frequent coauthors collaborating with Wen-Feng Hsieh include Yung-Chi Wu, Wei-Rein Liu, Bi-Hsuan Lin, Ja-Hon Lin, and Yu-Hao Wu.

Wen-Feng Hsieh has published most frequently in the following venues:

  • Applied Surface Science
  • AIP Advances

Best Publications

  • Band gap variation of size-controlled ZnO quantum dots synthesized by sol-gel method

    Kuo Feng Lin;Hsin Ming Cheng;Hsin Ming Cheng;Hsu Cheng Hsu;Li Jiaun Lin

  • Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

    Shou Yi Kuo;Wei Chun Chen;Fang I. Lai;Chin Pao Cheng

  • Formation of Branched ZnO Nanowires from Solvothermal Method and Dye-Sensitized Solar Cells Applications

    Hsin-Ming Cheng;Wei-Hao Chiu;Chia-Hua Lee;Song-Yeu Tsai

  • Size dependence of photoluminescence and resonant Raman scattering from ZnO quantum dots

    Hsin Ming Cheng;Hsin Ming Cheng;Kuo Feng Lin;Hsu Cheng Hsu;Wen Feng Hsieh

  • Stimulated emission and lasing of random-growth oriented ZnO nanowires

    Hsu-Cheng Hsu;Chun-Yi Wu;Wen-Feng Hsieh

  • Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots

    Kuo Feng Lin;Hsin Ming Cheng;Hsin Ming Cheng;Hsu Cheng Hsu;Wen Feng Hsieh

  • Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer.

    Hsin-Ming Cheng;Hsu-Cheng Hsu;Yung-Kuan Tseng;Li-Jiaun Lin

  • Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates.

    Hsu Cheng Hsu;Ching Sheng Cheng;Chia Chieh Chang;Song Yang

  • Room temperature polariton lasing vs. photon lasing in a ZnO-based hybrid microcavity.

    Tien Chang Lu;Ying Yu Lai;Yu Pin Lan;Si Wei Huang

  • High-efficiency metal-free organic-dye-sensitized solar cells with hierarchical ZnO photoelectrode

    Hsin-Ming Cheng;Wen-Feng Hsieh

  • Band gap engineering and stimulated emission of ZnMgO nanowires

    Hsu Cheng Hsu;Chun Yi Wu;Hsin Ming Cheng;Hsin Ming Cheng;Wen Feng Hsieh

  • Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

    F. S. S. Chien;F. S. S. Chien;C. L. Wu;Y. C. Chou;T. T. Chen

  • Two-photon resonance assisted huge nonlinear refraction and absorption in ZnO thin films

    Ja-Hon Lin;Yin-Jen Chen;Hung-Yu Lin;Wen-Feng Hsieh

  • Morphology-controlled synthesis of barium titanate nanostructures.

    Kuan-Chih Huang;Tung-Ching Huang;Wen-Feng Hsieh

  • Nanometer-scale conversion of Si3N4 to SiOx

    F. S.S. Chien;F. S.S. Chien;J. W. Chang;S. W. Lin;Y. C. Chou

  • A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers

    Yong Gang Wang;Hou Ren Chen;Xiao Ming Wen;Wen Feng Hsieh

  • Enhanced Resonant Raman Scattering and Electron-Phonon Coupling from Self-Assembled Secondary ZnO Nanoparticles

    Hsin Ming Cheng;Hsin Ming Cheng;Kuo Feng Lin;Hsu Cheng Hsu;Chih Jen Lin

  • Dual wavelength demultiplexing by coupling and decoupling of photonic crystal waveguides.

    F. S.-S. Chien;Y.-J. Hsu;W.-F. Hsieh;S.-C. Cheng

  • Efficient UV photoluminescence from monodispersed secondary ZnO colloidal spheres synthesized by sol-gel method

    Hsin Ming Cheng;Hsin Ming Cheng;Hsu Cheng Hsu;Shiow Lian Chen;Wen Ti Wu

  • Electron transfer properties of organic dye-sensitized solar cells based on indoline sensitizers with ZnO nanoparticles

    Hsin-Ming Cheng;Hsin-Ming Cheng;Wen-Feng Hsieh;Wen-Feng Hsieh

Frequent Co-Authors

Tien-Chang Lu
Tien-Chang Lu National Yang Ming Chiao Tung University
Shing-Chung Wang
Shing-Chung Wang National Yang Ming Chiao Tung University
J. Kwo
J. Kwo National Tsing Hua University
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Shangjr Gwo
Shangjr Gwo National Tsing Hua University
Minghwei Hong
Minghwei Hong National Taiwan University
Ying-Hao Chu
Ying-Hao Chu National Yang Ming Chiao Tung University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Chi-Kuang Sun
Chi-Kuang Sun National Taiwan University
San-Yuan Chen
San-Yuan Chen National Yang Ming Chiao Tung University

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