World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
85
Citations
41747
World Ranking
2118
National Ranking
627

Mark S. Hybertsen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mark S. Hybertsen sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 317 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Mark S. Hybertsen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mark S. Hybertsen sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 85 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2001 - Fellow of American Physical Society (APS) Citation For fundamental developments in the theory of electronic and optical properties of materials, especially the importance of manybody effects, and the application to semiconductor optoelectronic technology

Overview

Mark S. Hybertsen is affiliated with Brookhaven National Laboratory in the United States. Their research primarily spans the fields of Materials Science and Engineering, with subfields including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Renewable Energy, Sustainability and the Environment, and Computational Theory and Mathematics.

The scientist's work covers multiple specialized topics, notably:

  • Machine Learning in Materials Science
  • Computational Drug Discovery Methods
  • X-ray Diffraction in Crystallography
  • Chalcogenide Semiconductor Thin Films
  • Electronic and Structural Properties of Oxides
  • Electrocatalysts for Energy Conversion
  • Advanced Photocatalysis Techniques

Mark S. Hybertsen has contributed to numerous publications across various venues. The most frequent publication venues include:

  • Physical Review Materials
  • arXiv (Cornell University)
  • Communications Materials
  • Angewandte Chemie International Edition
  • Journal of the American Chemical Society

Notable recent publications are:

  • A Physical Model for Understanding the Activation of MoS 2 Basal-Plane Sulfur Atoms for the Hydrogen Evolution Reaction, 2020, Angewandte Chemie International Edition
  • Microscopic relaxation channels in materials for superconducting qubits, 2021, Communications Materials
  • Formation and Evolution of Metallocene Single-Molecule Circuits with Direct Gold-π Links, 2022, Journal of the American Chemical Society
  • Uncertainty-aware predictions of molecular x-ray absorption spectra using neural network ensembles, 2023, Physical Review Research
  • Resolving the Evolution of Atomic Layer-Deposited Thin-Film Growth by Continuous In Situ X-Ray Absorption Spectroscopy, 2021, Chemistry of Materials

Over the course of their career, Mark S. Hybertsen has collaborated frequently with several coauthors, including:

  • Deyu Lu
  • Xiaohui Qu
  • Eli Stavitski
  • Fanchen Meng
  • Matthew R. Carbone

Among the awards received is the designation as a Fellow of the American Physical Society (APS) in 2001, recognizing fundamental developments in the theory of electronic and optical properties of materials, with emphasis on many-body effects and semiconductor optoelectronic technology applications.

Best Publications

  • Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies.

    Mark S. Hybertsen;Steven G. Louie

  • Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2

    Alexey Chernikov;Timothy C. Berkelbach;Heather M. Hill;Albert Rigosi

  • Colloquium : Excitons in atomically thin transition metal dichalcogenides

    Gang Wang;Alexey Chernikov;Mikhail M. Glazov;Tony F. Heinz

  • Dependence of single-molecule junction conductance on molecular conformation

    Latha Venkataraman;Jennifer E. Klare;Colin Nuckolls;Mark S. Hybertsen

  • First-principles theory of quasiparticles: Calculation of band gaps in semiconductors and insulators.

    Mark S. Hybertsen;Steven G. Louie

  • Theory of neutral and charged excitons in monolayer transition metal dichalcogenides

    Timothy C. Berkelbach;Mark S. Hybertsen;David R. Reichman

  • Single-Molecule Circuits with Well-Defined Molecular Conductance

    Latha Venkataraman;Jennifer E. Klare;Iris W. Tam;Colin Nuckolls

  • Renormalization of Molecular Electronic Levels at Metal-Molecule Interfaces

    Jeffrey B. Neaton;Mark S. Hybertsen;Steven G. Louie;Steven G. Louie

  • Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping

    Li Liu;Sunmin Ryu;Michelle R. Tomasik;Elena Stolyarova

  • Visualizing individual nitrogen dopants in monolayer graphene.

    Liuyan Zhao;Rui He;Kwang Taeg Rim;Theanne Schiros

  • Calculation of Coulomb-interaction parameters for La 2 CuO 4 using a constrained-density-functional approach

    Mark S. Hybertsen;Michael Schlüter;Niels E. Christensen

  • Mechanically controlled binary conductance switching of a single-molecule junction.

    Su Ying Quek;Maria Kamenetska;Michael L. Steigerwald;Hyoung Joon Choi

  • High-resolution scanning tunneling microscopy imaging of mesoscopic graphene sheets on an insulating surface

    Elena Stolyarova;Kwang Taeg Rim;Sunmin Ryu;Janina Maultzsch

  • Observation of biexcitons in monolayer WSe2

    Yumeng You;Yumeng You;Xiao-Xiao Zhang;Timothy C. Berkelbach;Mark S. Hybertsen

  • Absorption and emission of light in nanoscale silicon structures.

    Mark S. Hybertsen

  • Amine-gold linked single-molecule circuits: experiment and theory.

    Su Ying Quek;Latha Venkataraman;Hyoung Joon Choi;Steven G. Louie

  • Connecting dopant bond type with electronic structure in N-doped graphene.

    Theanne Schiros;Dennis Nordlund;Lucia Pálová;Deborah Prezzi

  • Renormalization from density-functional theory to strong-coupling models for electronic states in Cu-O materials

    Mark S. Hybertsen;E. B. Stechel;M. Schluter;D. R. Jennison

  • Amine-Gold Linked Single-Molecule Junctions: Experiment and Theory

    Su Ying Quek;Latha Venkataraman;Hyoung Joon Choi;Steven G. Louie

  • Ab initio static dielectric matrices from the density-functional approach. I. Formulation and application to semiconductors and insulators.

    Mark S. Hybertsen;Steven G. Louie

  • Contact Chemistry and Single-Molecule Conductance : A Comparison of Phosphines, Methyl Sulfides, and Amines

    Young S Park;Adam C Whalley;Maria Kamenetska;Michael L Steigerwald

Frequent Co-Authors

Steven G. Louie
Steven G. Louie University of California, Berkeley
Latha Venkataraman
Latha Venkataraman Columbia University
Colin Nuckolls
Colin Nuckolls Columbia University
Michael L. Steigerwald
Michael L. Steigerwald Columbia University
Tony F. Heinz
Tony F. Heinz Stanford University
David R. Reichman
David R. Reichman Columbia University
George W. Flynn
George W. Flynn Columbia University
Alfredo Pasquarello
Alfredo Pasquarello École Polytechnique Fédérale de Lausanne
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Jeffrey B. Neaton
Jeffrey B. Neaton University of California, Berkeley

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