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Shin-ichi Nagahama

Shin-ichi Nagahama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
22410
World Ranking
1692
National Ranking
60

Overview

Shin-ichi Nagahama is affiliated with Nichia Corporation in Japan. Their research primarily focuses on GaN-based semiconductor devices and materials, semiconductor lasers and optical devices, as well as semiconductor quantum structures and devices. These topics are centrally positioned within the broad fields of physics and astronomy and engineering, with a particular emphasis on condensed matter physics, electrical and electronic engineering, and atomic and molecular physics, including optics.

Their publication record includes contributions to several recent papers, reflecting ongoing work in high-power laser diodes and laser packages used in display and projection applications. Notable publications include:

  • 82-1: Invited Paper: Latest Status of Blue and Green Laser Diodes and Laser Packages for Display Applications, 2020, SID Symposium Digest of Technical Papers
  • Recent Progress in High-Power Laser Diodes and Laser Packages for Projection Display Applications, 2020, Proceedings of the International Display Workshops
  • Milliwatt-class Green and Blue GaN-based Vertical-Cavity Surface-Emitting Lasers, 2021, Proceedings of the International Display Workshops
  • 71-1:Invited Paper: GaN-Based Watt-Class High-Power Edge-Emitting Lasers and Milliwatt-Class Vertical-Cavity Surface-Emitting Lasers, 2022, SID Symposium Digest of Technical Papers

The frequent venues where this scientist publishes include the SID Symposium Digest of Technical Papers and the Proceedings of the International Display Workshops, each contributing to the dissemination of developments in laser technologies and semiconductor devices.

Collaboration is evident in their work, with frequent co-authors including Tomoya Yanamoto, Shingo Masui, Eiichiro Okahisa, Kenichi Terao, and Hitoshi Nagai. These collaborations span multiple projects and papers, reflecting active engagement in their research community.

Best Publications

  • InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

    Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  • Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

    Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama

  • InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • Nitride semiconductor light emitting device

    Shuji Nakamura;Shinichi Nagahama;Naruhito Iwasa;Hiroyuki Kiyoku

  • Nitride semiconductor device

    Shinichi Nichia Chemical Ind. Ltd. Nagahama;Masayuki Nichia Chemical Industries Ltd. Senoh;Shuji Nichia Chemical Industries Ltd. Nakamura

  • High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

    Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin‐ichi Nagahama

  • Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

    Shuji Nakamura;Masayuki Senoh;Shin‐ichi Nagahama;Naruhito Iwasa

  • InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • Nitride semiconductor element

    Shinichi Nagahama;Tomoya Yanamoto

  • Nitride semiconductor laser device

    Tokuya Kozaki;Masahiko Sano;Shuji Nakamura;Shinichi Nagahama

  • CONTINUOUS-WAVE OPERATION OF INGAN/GAN/ALGAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • Light emitting apparatus and method of manufacturing the same

    Kunihiro Izuno;Kouki Matsumoto;Shinichi Nagahama;Masahiko Sano

  • InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

    Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  • Blue InGaN-based laser diodes with an emission wavelength of 450 nm

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

    Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  • InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

    Shuji Nakamura;Masayuki Senoh;Shin‐ichi Nagahama;Naruhito Iwasa

  • Nitride semiconductor element mfg. method and nitride semiconductor element

    Shinichi Nagahama;Masahiko Sano;Tomohisashi Yanagimoto

  • 510–515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate

    Takashi Miyoshi;Shingo Masui;Takeshi Okada;Tomoya Yanamoto

  • High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

    Shin-ichi Nagahama;Naruhito Iwasa;Masayuki Senoh;Toshio Matsushita

  • Nitride semiconductor light-emitting and light-receiving devices

    Shinichi Nagahama;Masayuki Senoh;Shuji Nakamura

Frequent Co-Authors

Takashi Mukai
Takashi Mukai National Institute of Advanced Industrial Science and Technology
Masahiko Sano
Masahiko Sano Nichia Corporation (Japan)
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Takao Yamada
Takao Yamada Nichia Corporation (Japan)
Yoichi Kawakami
Yoichi Kawakami Kyoto University
Yukio Narukawa
Yukio Narukawa Nichia Corporation (Japan)

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