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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
7975
World Ranking
3882
National Ranking
1397

Overview

Benjamin J. Blalock is affiliated with the University of Tennessee at Knoxville in the United States. Their primary research domain lies within engineering, particularly focusing on electrical and electronic engineering.

The scientist has contributed to various subfields, including electrical and electronic engineering, biomedical engineering, and artificial intelligence. Their work encompasses several key topics, such as:

  • Analog and Mixed-Signal Circuit Design
  • Multilevel Inverters and Converters
  • Advanced DC-DC Converters
  • Silicon Carbide Semiconductor Technologies
  • Radiation Effects in Electronics
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon and Solar Cell Technologies

Their recent publications demonstrate a focus on power electronics, semiconductor technologies, and system-level vulnerability analysis. Notable papers include:

  • Methodology of Low Inductance Busbar Design for Three-Level Converters, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications, 2022, IEEE Transactions on Nuclear Science
  • Programmable Energy-Efficient Analog Multilayer Perceptron Architecture Suitable for Future Expansion to Hardware Accelerators, 2023, Journal of Low Power Electronics and Applications
  • A Framework for Determining System-Level SEE Vulnerabilities in Wireless RF Receivers, 2025, IEEE Transactions on Nuclear Science
  • SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration, 2024, arXiv (Cornell University)

The scientist frequently publishes in venues such as:

  • IEEE Transactions on Nuclear Science
  • IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Journal of Low Power Electronics and Applications
  • arXiv (Cornell University)

Benjamin J. Blalock collaborates regularly with several co-authors including Jeffrey W. Teng, Brett L. Ringel, Zachary R. Brumbach, Justin P. Heimerl, and Jackson P. Moody, each having multiple joint publications with them.

Best Publications

  • Designing 1-V op amps using standard digital CMOS technology

    B.J. Blalock;P.E. Allen;G.A. Rincon-Mora

  • Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs

    Zhiqiang Wang;Xiaojie Shi;Yang Xue;Leon M. Tolbert

  • Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

    Zhiqiang Wang;Xiaojie Shi;Leon M. Tolbert;Fred Wang

  • Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration

    Zheyu Zhang;Fred Wang;Leon M. Tolbert;Benjamin J. Blalock

  • Methodology for Wide Band-Gap Device Dynamic Characterization

    Zheyu Zhang;Ben Guo;Fei Fred Wang;Edward A. Jones

  • A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules

    Zhiqiang Wang;Xiaojie Shi;Leon M. Tolbert;Fei Wang

  • Evaluation of Switching Performance of SiC Devices in PWM Inverter-Fed Induction Motor Drives

    Zheyu Zhang;Fred Wang;Leon M. Tolbert;Benjamin J. Blalock

  • A 100-ps time-resolution CMOS time-to-digital converter for positron emission tomography imaging applications

    B.K. Swann;B.J. Blalock;L.G. Clonts;D.M. Binkley

  • Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters

    Weimin Zhang;Fred Wang;Daniel J. Costinett;Leon M. Tolbert

  • Review of Power Electronics Components at Cryogenic Temperatures

    Handong Gui;Ruirui Chen;Jiahao Niu;Zheyu Zhang

  • Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration

    Zheyu Zhang;Weimin Zhang;Fred Wang;Leon M. Tolbert

  • A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    Zhiqiang Wang;Xiaojie Shi;Leon M. Tolbert;Fei Fred Wang

  • A miniaturized neuroprosthesis suitable for implantation into the brain

    M. Mojarradi;D. Binkley;B. Blalock;R. Andersen

  • Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

    Zheyu Zhang;Jeffery Dix;Fei Fred Wang;Benjamin J. Blalock

  • A low-voltage, bulk-driven MOSFET current mirror for CMOS technology

    B.J. Blalock;P.E. Allen

  • Active current balancing for parallel-connected silicon carbide MOSFETs

    Yang Xue;Junjie Lu;Zhiqiang Wang;Leon M. Tolbert

  • Body-driving as a low-voltage analog design technique for CMOS technology

    B.J. Blalock;H.W. Li;P.E. Allen;S.A. Jackson

  • Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter

    Weimin Zhang;Zhuxian Xu;Zheyu Zhang;Fred Wang

  • An All-SiC Three-Phase Buck Rectifier for High-Efficiency Data Center Power Supplies

    Fan Xu;Ben Guo;Leon M. Tolbert;Fei Wang

  • Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration

    Zheyu Zhang;Ben Guo;Fred Wang;Leon M. Tolbert

Frequent Co-Authors

Leon M. Tolbert
Leon M. Tolbert University of Tennessee at Knoxville
Fred Wang
Fred Wang University of Tennessee at Knoxville
Daniel Costinett
Daniel Costinett University of Tennessee at Knoxville
Syed K. Islam
Syed K. Islam University of Tennessee at Knoxville
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
John D. Cressler
John D. Cressler Georgia Institute of Technology
Robert A. Reed
Robert A. Reed Vanderbilt University
Guofu Niu
Guofu Niu Auburn University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Gabriel A. Rincon-Mora
Gabriel A. Rincon-Mora Georgia Institute of Technology

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