World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
7975
World Ranking
3882
National Ranking
1398

Benjamin J. Blalock publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Benjamin J. Blalock sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 270 publications — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Benjamin J. Blalock D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Benjamin J. Blalock sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Benjamin J. Blalock is affiliated with the University of Tennessee at Knoxville in the United States. Their primary research domain lies within engineering, particularly focusing on electrical and electronic engineering.

The scientist has contributed to various subfields, including electrical and electronic engineering, biomedical engineering, and artificial intelligence. Their work encompasses several key topics, such as:

  • Analog and Mixed-Signal Circuit Design
  • Multilevel Inverters and Converters
  • Advanced DC-DC Converters
  • Silicon Carbide Semiconductor Technologies
  • Radiation Effects in Electronics
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon and Solar Cell Technologies

Their recent publications demonstrate a focus on power electronics, semiconductor technologies, and system-level vulnerability analysis. Notable papers include:

  • Methodology of Low Inductance Busbar Design for Three-Level Converters, 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications, 2022, IEEE Transactions on Nuclear Science
  • Programmable Energy-Efficient Analog Multilayer Perceptron Architecture Suitable for Future Expansion to Hardware Accelerators, 2023, Journal of Low Power Electronics and Applications
  • A Framework for Determining System-Level SEE Vulnerabilities in Wireless RF Receivers, 2025, IEEE Transactions on Nuclear Science
  • SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration, 2024, arXiv (Cornell University)

The scientist frequently publishes in venues such as:

  • IEEE Transactions on Nuclear Science
  • IEEE Journal of Emerging and Selected Topics in Power Electronics
  • Journal of Low Power Electronics and Applications
  • arXiv (Cornell University)

Benjamin J. Blalock collaborates regularly with several co-authors including Jeffrey W. Teng, Brett L. Ringel, Zachary R. Brumbach, Justin P. Heimerl, and Jackson P. Moody, each having multiple joint publications with them.

Best Publications

  • Designing 1-V op amps using standard digital CMOS technology

    B.J. Blalock;P.E. Allen;G.A. Rincon-Mora

  • Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs

    Zhiqiang Wang;Xiaojie Shi;Yang Xue;Leon M. Tolbert

  • Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

    Zhiqiang Wang;Xiaojie Shi;Leon M. Tolbert;Fred Wang

  • Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration

    Zheyu Zhang;Fred Wang;Leon M. Tolbert;Benjamin J. Blalock

  • Methodology for Wide Band-Gap Device Dynamic Characterization

    Zheyu Zhang;Ben Guo;Fei Fred Wang;Edward A. Jones

  • A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules

    Zhiqiang Wang;Xiaojie Shi;Leon M. Tolbert;Fei Wang

  • Evaluation of Switching Performance of SiC Devices in PWM Inverter-Fed Induction Motor Drives

    Zheyu Zhang;Fred Wang;Leon M. Tolbert;Benjamin J. Blalock

  • A 100-ps time-resolution CMOS time-to-digital converter for positron emission tomography imaging applications

    B.K. Swann;B.J. Blalock;L.G. Clonts;D.M. Binkley

  • Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters

    Weimin Zhang;Fred Wang;Daniel J. Costinett;Leon M. Tolbert

  • Review of Power Electronics Components at Cryogenic Temperatures

    Handong Gui;Ruirui Chen;Jiahao Niu;Zheyu Zhang

  • Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration

    Zheyu Zhang;Weimin Zhang;Fred Wang;Leon M. Tolbert

  • A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

    Zhiqiang Wang;Xiaojie Shi;Leon M. Tolbert;Fei Fred Wang

  • A miniaturized neuroprosthesis suitable for implantation into the brain

    M. Mojarradi;D. Binkley;B. Blalock;R. Andersen

  • Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

    Zheyu Zhang;Jeffery Dix;Fei Fred Wang;Benjamin J. Blalock

  • A low-voltage, bulk-driven MOSFET current mirror for CMOS technology

    B.J. Blalock;P.E. Allen

  • Active current balancing for parallel-connected silicon carbide MOSFETs

    Yang Xue;Junjie Lu;Zhiqiang Wang;Leon M. Tolbert

  • Body-driving as a low-voltage analog design technique for CMOS technology

    B.J. Blalock;H.W. Li;P.E. Allen;S.A. Jackson

  • Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter

    Weimin Zhang;Zhuxian Xu;Zheyu Zhang;Fred Wang

  • An All-SiC Three-Phase Buck Rectifier for High-Efficiency Data Center Power Supplies

    Fan Xu;Ben Guo;Leon M. Tolbert;Fei Wang

  • Methodology for switching characterization evaluation of wide band-gap devices in a phase-leg configuration

    Zheyu Zhang;Ben Guo;Fred Wang;Leon M. Tolbert

Frequent Co-Authors

Leon M. Tolbert
Leon M. Tolbert University of Tennessee at Knoxville
Fred Wang
Fred Wang University of Tennessee at Knoxville
Daniel Costinett
Daniel Costinett University of Tennessee at Knoxville
Syed K. Islam
Syed K. Islam University of Tennessee at Knoxville
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
John D. Cressler
John D. Cressler Georgia Institute of Technology
Gary S. Sayler
Gary S. Sayler University of Tennessee at Knoxville
Robert A. Reed
Robert A. Reed Vanderbilt University
Guofu Niu
Guofu Niu Auburn University
Gabriel A. Rincon-Mora
Gabriel A. Rincon-Mora Georgia Institute of Technology

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