World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
37
Citations
5442
World Ranking
8403
National Ranking
2331

James A. Bain publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where James A. Bain sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 300 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

James A. Bain D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where James A. Bain sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 37 D-Index — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

James A. Bain is affiliated with Carnegie Mellon University in the United States. Their research spans primarily the fields of Engineering and Materials Science, with significant contributions in subfields such as Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, as well as Mechanics of Materials.

The scientist's work covers various main topics including:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Acoustic Wave Resonator Technologies
  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Near-Field Optical Microscopy
  • Phase-change materials and chalcogenides

Frequent co-authors collaborating with Bain include:

  • Liting Shen
  • Marek Skowroński
  • Yuanzhi Ma
  • Phoebe Yeoh
  • Jonathan M. Goodwill

The scientist publishes regularly in a range of journals. Frequent publication venues are:

  • Journal of Applied Physics
  • AIP Advances
  • IEEE Transactions on Magnetics
  • Optics Express
  • ACS Applied Electronic Materials

Selected recent papers by James A. Bain include:

  • "Evolution of the conductive filament with cycling in TaOx-based resistive switching devices," 2020, Journal of Applied Physics
  • "Measured optical losses of Sc doped AlN waveguides," 2024, Optics Express
  • "Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices," 2020, ACS Applied Electronic Materials
  • "Adapting the RACER Architecture to Integrate Improved In-ReRAM Logic Primitives," 2022, IEEE Journal on Emerging and Selected Topics in Circuits and Systems
  • "Simulation of a Thermally Efficient Heat-Assisted Magnetic Recording Ridge Waveguide NFT on an AlN Heat Sink," 2021, IEEE Transactions on Magnetics

Best Publications

  • The effect of external magnetic field on mark size in heat-assisted probe recording on CoNi/Pt multilayers

    Li Zhang;James A. Bain;Jian-Gang Zhu;Leon Abelmann

  • Stress Determination in Textured Thin Films Using X-Ray Diffraction

    B.M. Clemens;J.A. Bain

  • Single-chip computers with microelectromechanical systems-based magnetic memory (invited)

    L. Richard Carley;James A. Bain;Gary K. Fedder;David W. Greve

  • Influence of stress and texture on soft magnetic properties of thin films

    Pei Zou;W. Yu;J.A. Bain

  • Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    Dasheng Li;Abhishek A. Sharma;Darshil K. Gala;Nikhil Shukla

  • Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching

    W. Jiang;M. Noman;Y. M. Lu;J. A. Bain

  • Acousto-optical modulation of thin film lithium niobate waveguide devices

    Lutong Cai;Ashraf Mahmoud;Msi Khan;Mohamed Mahmoud

  • Imaging of quantized magnetostatic modes using spatially resolved ferromagnetic resonance

    S. Tamaru;J. A. Bain;R. J. M. van de Veerdonk;T. M. Crawford

  • Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

    Jonghan Kwon;Abhishek A. Sharma;James A. Bain;Yoosuf N. Picard

  • Imaging of optical field confinement in ridge waveguides fabricated on very-small-aperture laser

    Fang Chen;A. Itagi;J. A. Bain;D. D. Stancil

  • Elastic strains and coherency stresses in Mo/Ni multilayers.

    Bain Ja;Chyung Lj;Brennan S;Clemens Bm

  • Electronic Instabilities Leading to Electroformation of Binary Metal Oxide‐based Resistive Switches

    Abhishek A. Sharma;Mohammad Noman;Mohamed Abdelmoula;Marek Skowronski

  • Oscillatory Neural Networks Based on TMO Nano-Oscillators and Multi-Level RRAM Cells

    Thomas C. Jackson;Abhishek A. Sharma;James A. Bain;Jeffrey A. Weldon

  • Phase Coupling and Control of Oxide-Based Oscillators for Neuromorphic Computing

    Abhishek A. Sharma;James A. Bain;Jeffrey A. Weldon

  • Device with waveguide defined by dielectric in aperture of cross-track portion of electrical conductor for writing data to a recording medium

    Daniel D. Stancil;Amit Itagi;Tuviah E. Schlesinger;James A. Bain

  • Application of Image Processing to Characterize Patterning Noise in Self-Assembled Nano-Masks for Bit-Patterned Media

    S. Nabavi;B.V.K. Vijaya Kumar;J.A. Bain;C. Hogg

  • Design Criteria in Sizing Phase-Change RF Switches

    Gregory Slovin;Min Xu;Rahul Singh;T. E. Schlesinger

  • Spontaneous current constriction in threshold switching devices

    Jonathan M. Goodwill;Jonathan M. Goodwill;Georg Ramer;Dasheng Li;Dasheng Li;Brian D. Hoskins

  • Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications

    E. K. Chua;L. P. Shi;R. Zhao;K. G. Lim

  • Enhancement of Thermal Conductance at Metal-Dielectric Interfaces Using Subnanometer Metal Adhesion Layers

    Minyoung Jeong;Justin P. Freedman;Hongliang Joe Liang;Cheng-Ming Chow

  • High Frequency Initial Permeability Of NiFe and FeAIN

    W.P. Jayasekara;J.A. Bain;M.H. Kryder

  • Ridge waveguide as a near-field optical source

    A. V. Itagi;D. D. Stancil;J. A. Bain;T. E. Schlesinger

  • Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

    Mohammad Noman;Wenkan Jiang;Paul A. Salvador;Marek Skowronski

  • AlN Barriers for Capacitance Reduction in Phase-Change RF Switches

    Gregory Slovin;Min Xu;Jeyanandh Paramesh;T. E. Schlesinger

Frequent Co-Authors

Marek Skowronski
Marek Skowronski Carnegie Mellon University
Daniel D. Stancil
Daniel D. Stancil North Carolina State University
David E. Laughlin
David E. Laughlin Carnegie Mellon University
Gary K. Fedder
Gary K. Fedder Carnegie Mellon University
Bruce M. Clemens
Bruce M. Clemens Stanford University
Paul A. Salvador
Paul A. Salvador Carnegie Mellon University
Gianluca Piazza
Gianluca Piazza Carnegie Mellon University
William C. Messner
William C. Messner Tufts University
Luping Shi
Luping Shi Tsinghua University
Sara A. Majetich
Sara A. Majetich Carnegie Mellon University

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