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Gueorgui Kostov Gueorguiev

Gueorgui Kostov Gueorguiev

D-Index & Metrics

Materials Science

D-Index
45
Citations
3246
World Ranking
11886
National Ranking
124

Gueorgui Kostov Gueorguiev publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gueorgui Kostov Gueorguiev sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 77 publications — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gueorgui Kostov Gueorguiev D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gueorgui Kostov Gueorguiev sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gueorgui Kostov Gueorguiev is affiliated with Linköping University in Sweden. Their research predominantly lies within the fields of Materials Science and Engineering, with significant contributions to Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Atomic and Molecular Physics, and Optics.

Their work covers a variety of topics including Ga2O3 and related materials, graphene research and applications, GaN-based semiconductor devices and materials, ZnO doping and properties, 2D materials and applications, gas sensing nanomaterials and sensors, and metal and thin film mechanics.

Gueorguiev has published extensively in several scientific journals. The most frequent publication venues include:

  • Physical Chemistry Chemical Physics
  • CrystEngComm
  • arXiv (Cornell University)
  • SSRN Electronic Journal
  • Nanotechnology

Among recent papers authored or co-authored by Gueorguiev are:

  • "A perspective on thermal stability and mechanical properties of 2D Indium Bismide from ab initio molecular dynamics" (2022) published in Nanotechnology
  • "Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface" (2022) published in Physical Chemistry Chemical Physics
  • "Density Functional Theory-Fed Phase Field Model for Semiconductor Nanostructures: The Case of Self-Induced Core-Shell InAlN Nanorods" (2024) published in Crystal Growth & Design
  • "2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface" (2023) published in CrystEngComm
  • "Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface" (2020) published in Nanoscale

Frequent co-authors with whom Gueorguiev has collaborated include:

  • A. Kakanakova-Georgieva
  • Ching-Lien Hsiao
  • Lars Hultman
  • Jens Birch
  • Davide G. Sangiovanni

Best Publications

  • Defects in hexagonal-AlN sheets by first-principles calculations

    E. F. de Almeida;F. de Brito Mota;C. M. C. de Castilho;A. Kakanakova-Georgieva

  • Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

    Rafael R. Q. Freitas;Rafael R. Q. Freitas;R. Rivelino;F. de Brito Mota;C. M. C. de Castilho

  • Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties.

    Renato B dos Santos;Renato B dos Santos;F de Brito Mota;R Rivelino;A Kakanakova-Georgieva

  • A perspective on thermal stability and mechanical properties of 2D Indium Bismide from ab initio molecular dynamics

    Unknown

  • Quantum size effects in the polarizability of carbon fullerenes.

    Gueorgui Kostov Gueorguiev;J. M. Pacheco;D. Tomanek

  • Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene

    Davide Giuseppe Sangiovanni;Gueorgui Kostov Gueorguiev;Anelia Kakanakova-Georgieva

  • Exploring hydrogenation and fluorination in curved 2D carbon systems: a density functional theory study on corannulene.

    Renato B. dos Santos;Roberto Rivelino;Fernando de B. Mota;Gueorgui Kostov Gueorguiev

  • First-principles calculations on the role of CN precursors for the formation of fullerene-like carbon nitride

    G.K. Gueorguiev;Jörg Neidhardt;Sven Stafström;Lars Hultman

  • 2D graphitic-like gallium nitride and other structural selectivity in confinement at graphene/SiC interface

    Unknown

  • First-principles calculations on the curvature evolution and cross-linkage in carbon nitride

    Gueorgui Kostov Gueorguiev;Jörg Neidhardt;Sven Stafström;Lars Hultman

  • Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface

    Unknown

  • Benzene, coronene, and circumcoronene adsorbed on gold, and a gold cluster adsorbed on graphene: Structural and electronic properties

    Paulo V. C. Medeiros;Gueorgui Kostov Gueorguiev;Sven Stafström

  • Material proposal for 2D indium oxide

    Anelia Kakanakova-Georgieva;Filippo Giannazzo;Giuseppe Nicotra;Ildikó Cora

  • Conformational effects on structure, electron states, and raman scattering properties of linear carbon chains terminated by graphene-like pieces

    R Rivelino;Renato B dos Santos;F de Brito Mota;Gueorgui Kostov Gueorguiev

  • Sublimation growth of AlN crystals: Growth mode and structure evolution

    Rositsa Yakimova;Anelia Kakanakova-Georgieva;Gholamreza R. Yazdi;Gueorgui K. Gueorguiev

  • MOCVD of AlN on epitaxial graphene at extreme temperatures

    Anelia Kakanakova-Georgieva;Ivan G. Ivanov;Nattamon Suwannaharn;Nattamon Suwannaharn;Chih-Wei Hsu

  • Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface.

    Anelia Kakanakova-Georgieva;Gueorgui K. Gueorguiev;Davide G. Sangiovanni;Nattamon Suwannaharn;Nattamon Suwannaharn

  • Structural identification of metcars.

    Gueorguiev Gk;Pacheco Jm

  • Self-Healing in Carbon Nitride Evidenced As Material Inflation and Superlubric Behavior

    Konstantinos Bakoglidis;Justinas Palisaitis;Renato B. dos Santos;Roberto Rivelino

  • Dangling bond energetics in carbon nitride and phosphorus carbide thin films with fullerene-like and amorphous structure

    Gueorgui Kostov Gueorguiev;E Broitman;Andrej Furlan;Sven Stafström

  • First–principles calculations on the structural evolution of solid fullerene–like CPx

    Gueorgui Kostov Gueorguiev;Andrej Furlan;Hans Högberg;Sven Stafström

  • Fullerene-like CSx: A first-principles study of synthetic growth

    Cecilia Goyenola;Gueorgui Kostov Gueorguiev;Sven Stafström;Lars Hultman

  • Water adsorption on fullerene-like carbon nitride overcoats

    E. Broitman;G.K. Gueorguiev;A. Furlan;N.T. Son

Frequent Co-Authors

Lars Hultman
Lars Hultman Linköping University
Sven Stafström
Sven Stafström Linköping University
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
Johanna Rosen
Johanna Rosen Linköping University
Filippo Giannazzo
Filippo Giannazzo National Research Council (CNR)
Rositsa Yakimova
Rositsa Yakimova Linköping University
Erik Janzén
Erik Janzén Linköping University
Jens Jensen
Jens Jensen Linköping University
Per Persson
Per Persson Linköping University
Grzegorz Greczynski
Grzegorz Greczynski Linköping University

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