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Materials Science

D-Index
64
Citations
33368
World Ranking
5762
National Ranking
1482

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For contributions to the physics of 2D electron systems

Overview

Emanuel Tutuc is affiliated with The University of Texas at Austin in the United States. Their research primarily spans the fields of Materials Science and Physics and Astronomy, with a significant focus on subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, and General Health Professions.

Tutuc's work addresses a range of topics including graphene research and applications, quantum and electron transport phenomena, 2D materials and applications, topological materials and phenomena, thermal properties of materials, photonic and optical devices, and electronic and structural properties of oxides.

The scientist has contributed several recent papers to reputable academic journals. These include:

  • "The marvels of moiré materials," 2021, Nature Reviews Materials
  • "Flat bands in twisted bilayer transition metal dichalcogenides," 2020, Nature Physics
  • "Quantum Dynamics of Attractive and Repulsive Polarons in a Doped MoSe2 Monolayer," 2023, Physical Review X
  • "Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride," 2021, Applied Physics Letters
  • "Bulk and edge properties of twisted double bilayer graphene," 2021, Nature Physics

Frequent coauthors include Kenji Watanabe, Takashi Taniguchi, G. William Burg, A. H. MacDonald, and Yimeng Wang, with multiple collaborative publications.

Tutuc's research has appeared in various prominent venues, among which Physical Review Letters, Nano Letters, arXiv (Cornell University), Nature Physics, and Applied Physics Letters are notable for multiple contributions.

In recognition of their contributions to the physics of two-dimensional electron systems, Emanuel Tutuc was awarded the status of Fellow of the American Physical Society in 2016.

Best Publications

  • Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

    Xuesong Li;Weiwei Cai;Jinho An;Seyoung Kim

  • Evidence for moiré excitons in van der Waals heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

    Yufeng Hao;M. S. Bharathi;Lei Wang;Yuanyue Liu

  • Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

    Seyoung Kim;Junghyo Nah;Insun Jo;Davood Shahrjerdi

  • Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers.

    Fengcheng Wu;Fengcheng Wu;Timothy Lovorn;Emanuel Tutuc;Ivar Martin

  • van der Waals Heterostructures with High Accuracy Rotational Alignment.

    Kyounghwan Kim;Matthew Yankowitz;Babak Fallahazad;Sangwoo Kang

  • Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands.

    Fengcheng Wu;Timothy Lovorn;Emanuel Tutuc;A. H. MacDonald

  • Moir'e Excitons in Van der Waals Heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

    Stefano Larentis;Babak Fallahazad;Emanuel Tutuc

  • The marvels of moiré materials

    Eva Y. Andrei;Dmitri K. Efetov;Pablo Jarillo-Herrero;Allan H. MacDonald

  • Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

    Chihhui Wu;Nihal Arju;Glen Kelp;Jonathan A. Fan

  • Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene

    Kyounghwan Kim;Ashley DaSilva;Shengqiang Huang;Babak Fallahazad

  • Counterflow measurements in strongly correlated GaAs hole bilayers: Evidence for electron-hole pairing

    Emanuel Tutuc;M. Shayegan;D. A. Huse

  • Flat bands in twisted bilayer transition metal dichalcogenides

    Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

  • High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

    Hema C. P. Movva;Amritesh Rai;Sangwoo Kang;Kyounghwan Kim

  • Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

    S.K. Banerjee;L.F. Register;E. Tutuc;D. Reddy

  • Correlated Insulating States in Twisted Double Bilayer Graphene.

    G. William Burg;Jihang Zhu;Takashi Taniguchi;Kenji Watanabe

  • Topologically Protected Helical States in Minimally Twisted Bilayer Graphene.

    Shengqiang Huang;Kyounghwan Kim;Dmitry K. Efimkin;Timothy Lovorn

  • Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    Anupam Roy;Hema C. P. Movva;Biswarup Satpati;Kyounghwan Kim

  • Coulomb drag of massless fermions in graphene

    Seyoung Kim;Insun Jo;Junghyo Nah;Z. Yao

  • Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

    Amritesh Rai;Amithraj Valsaraj;Hema C.P. Movva;Anupam Roy

  • Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

    Chris M. Corbet;Connor McClellan;Amritesh Rai;Sushant Sudam Sonde

  • Photonic-crystal exciton-polaritons in monolayer semiconductors

    Long Zhang;Rahul Gogna;Will Burg;Emanuel Tutuc

  • Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

    Chihhui Wu;Nihal Arju;Jonathan Fan;Igal Brener

Frequent Co-Authors

Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Allan H. MacDonald
Allan H. MacDonald The University of Texas at Austin
Junghyo Nah
Junghyo Nah Chungnam National University
Supratik Guha
Supratik Guha Argonne National Laboratory
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Oki Gunawan
Oki Gunawan IBM (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Daniel Wasserman
Daniel Wasserman The University of Texas at Austin

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