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Emanuel Tutuc

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 64 5760 5572 1480 1384 327 33368

Emanuel Tutuc publications per year

The chart shows the history of publications by Emanuel Tutuc between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Emanuel Tutuc published across 26 years, from 2000 to 2025, averaging 13.8 papers a year. Output peaked at 26 publications in 2009. 4 of the 359 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2009. 2000: 1 publication 2001: 3 publications 2002: 13 publications 2003: 14 publications 2004: 21 publications 2005: 10 publications 2006: 20 publications 2007: 14 publications 2008: 17 publications 2009: 26 publications 2010: 24 publications 2011: 25 publications 2012: 22 publications 2013: 10 publications 2014: 12 publications 2015: 24 publications 2016: 16 publications 2017: 22 publications 2018: 18 publications 2019: 19 publications 2020: 9 publications 2021: 7 publications 2022: 4 publications 2023: 4 publications 2024: 1 publication 2025: 3 publications
2000 2025

359 publications in total across all disciplines

View publications per year as a table
Emanuel Tutuc: publications per year, 2000 to 2025
Year Publications
2000 1
2001 3
2002 13
2003 14
2004 21
2005 10
2006 20
2007 14
2008 17
2009 26
2010 24
2011 25
2012 22
2013 10
2014 12
2015 24
2016 16
2017 22
2018 18
2019 19
2020 9
2021 7
2022 4
2023 4
2024 1
2025 3
Total 359
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Emanuel Tutuc publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Emanuel Tutuc sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 310–329 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 327 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537 327
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Emanuel Tutuc D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Emanuel Tutuc sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 64–65 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533 64
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For contributions to the physics of 2D electron systems

Overview

Emanuel Tutuc is affiliated with The University of Texas at Austin in the United States. Their research primarily spans the fields of Materials Science and Physics and Astronomy, with a significant focus on subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, and General Health Professions.

Tutuc's work addresses a range of topics including graphene research and applications, quantum and electron transport phenomena, 2D materials and applications, topological materials and phenomena, thermal properties of materials, photonic and optical devices, and electronic and structural properties of oxides.

The scientist has contributed several recent papers to reputable academic journals. These include:

  • "The marvels of moiré materials," 2021, Nature Reviews Materials
  • "Flat bands in twisted bilayer transition metal dichalcogenides," 2020, Nature Physics
  • "Quantum Dynamics of Attractive and Repulsive Polarons in a Doped MoSe2 Monolayer," 2023, Physical Review X
  • "Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride," 2021, Applied Physics Letters
  • "Bulk and edge properties of twisted double bilayer graphene," 2021, Nature Physics

Frequent coauthors include Kenji Watanabe, Takashi Taniguchi, G. William Burg, A. H. MacDonald, and Yimeng Wang, with multiple collaborative publications.

Tutuc's research has appeared in various prominent venues, among which Physical Review Letters, Nano Letters, arXiv (Cornell University), Nature Physics, and Applied Physics Letters are notable for multiple contributions.

In recognition of their contributions to the physics of two-dimensional electron systems, Emanuel Tutuc was awarded the status of Fellow of the American Physical Society in 2016.

Best Publications

  • Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

    Xuesong Li;Weiwei Cai;Jinho An;Seyoung Kim

  • Evidence for moiré excitons in van der Waals heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

    Yufeng Hao;M. S. Bharathi;Lei Wang;Yuanyue Liu

  • Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

    Seyoung Kim;Junghyo Nah;Insun Jo;Davood Shahrjerdi

  • Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers.

    Fengcheng Wu;Fengcheng Wu;Timothy Lovorn;Emanuel Tutuc;Ivar Martin

  • van der Waals Heterostructures with High Accuracy Rotational Alignment.

    Kyounghwan Kim;Matthew Yankowitz;Babak Fallahazad;Sangwoo Kang

  • Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands.

    Fengcheng Wu;Timothy Lovorn;Emanuel Tutuc;A. H. MacDonald

  • Moir'e Excitons in Van der Waals Heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

    Stefano Larentis;Babak Fallahazad;Emanuel Tutuc

  • The marvels of moiré materials

    Eva Y. Andrei;Dmitri K. Efetov;Pablo Jarillo-Herrero;Allan H. MacDonald

  • Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

    Chihhui Wu;Nihal Arju;Glen Kelp;Jonathan A. Fan

  • Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene

    Kyounghwan Kim;Ashley DaSilva;Shengqiang Huang;Babak Fallahazad

  • Counterflow measurements in strongly correlated GaAs hole bilayers: Evidence for electron-hole pairing

    Emanuel Tutuc;M. Shayegan;D. A. Huse

  • Flat bands in twisted bilayer transition metal dichalcogenides

    Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

  • High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

    Hema C. P. Movva;Amritesh Rai;Sangwoo Kang;Kyounghwan Kim

  • Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

    S.K. Banerjee;L.F. Register;E. Tutuc;D. Reddy

  • Correlated Insulating States in Twisted Double Bilayer Graphene.

    G. William Burg;Jihang Zhu;Takashi Taniguchi;Kenji Watanabe

  • Topologically Protected Helical States in Minimally Twisted Bilayer Graphene.

    Shengqiang Huang;Kyounghwan Kim;Dmitry K. Efimkin;Timothy Lovorn

  • Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    Anupam Roy;Hema C. P. Movva;Biswarup Satpati;Kyounghwan Kim

  • Coulomb drag of massless fermions in graphene

    Seyoung Kim;Insun Jo;Junghyo Nah;Z. Yao

  • Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

    Amritesh Rai;Amithraj Valsaraj;Hema C.P. Movva;Anupam Roy

  • Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

    Chris M. Corbet;Connor McClellan;Amritesh Rai;Sushant Sudam Sonde

  • Photonic-crystal exciton-polaritons in monolayer semiconductors

    Long Zhang;Rahul Gogna;Will Burg;Emanuel Tutuc

  • Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

    Chihhui Wu;Nihal Arju;Jonathan Fan;Igal Brener

Frequent Co-Authors

Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Allan H. MacDonald
Allan H. MacDonald The University of Texas at Austin
Junghyo Nah
Junghyo Nah Chungnam National University
Supratik Guha
Supratik Guha Argonne National Laboratory
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Oki Gunawan
Oki Gunawan IBM (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Daniel Wasserman
Daniel Wasserman The University of Texas at Austin

External Links

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Best Scientists Citing Emanuel Tutuc

Kenji Watanabe

Kenji Watanabe

National Institute for Materials Science

Publications: 343

Takashi Taniguchi

Takashi Taniguchi

National Institute for Materials Science

Publications: 281

Rodney S. Ruoff

Rodney S. Ruoff

Ulsan National Institute of Science and Technology

Publications: 148

Zhongfan Liu

Zhongfan Liu

Peking University

Publications: 136

Alex Zettl

Alex Zettl

University of California, Berkeley

Publications: 98

James Hone

James Hone

Columbia University

Publications: 89

Jing Kong

Jing Kong

MIT

Publications: 84

Deji Akinwande

Deji Akinwande

The University of Texas at Austin

Publications: 82

Sanjay K. Banerjee

Sanjay K. Banerjee

The University of Texas at Austin

Publications: 79

Pulickel M. Ajayan

Pulickel M. Ajayan

Rice University

Publications: 71

Feng Wang

Feng Wang

University of California, Berkeley

Publications: 69

Hailin Peng

Hailin Peng

Peking University

Publications: 63

Lain-Jong Li

Lain-Jong Li

National University of Singapore

Publications: 62

Yanfeng Zhang

Yanfeng Zhang

Peking University

Publications: 61

Feng Ding

Feng Ding

Shenzhen Institutes of Advanced Technology

Publications: 60

Byung Hee Hong

Byung Hee Hong

Seoul National University

Publications: 59

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