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D-Index & Metrics

Materials Science

D-Index
64
Citations
33368
World Ranking
5760
National Ranking
1480

Emanuel Tutuc publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Emanuel Tutuc sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 327 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Emanuel Tutuc D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Emanuel Tutuc sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For contributions to the physics of 2D electron systems

Overview

Emanuel Tutuc is affiliated with The University of Texas at Austin in the United States. Their research primarily spans the fields of Materials Science and Physics and Astronomy, with a significant focus on subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, and General Health Professions.

Tutuc's work addresses a range of topics including graphene research and applications, quantum and electron transport phenomena, 2D materials and applications, topological materials and phenomena, thermal properties of materials, photonic and optical devices, and electronic and structural properties of oxides.

The scientist has contributed several recent papers to reputable academic journals. These include:

  • "The marvels of moiré materials," 2021, Nature Reviews Materials
  • "Flat bands in twisted bilayer transition metal dichalcogenides," 2020, Nature Physics
  • "Quantum Dynamics of Attractive and Repulsive Polarons in a Doped MoSe2 Monolayer," 2023, Physical Review X
  • "Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride," 2021, Applied Physics Letters
  • "Bulk and edge properties of twisted double bilayer graphene," 2021, Nature Physics

Frequent coauthors include Kenji Watanabe, Takashi Taniguchi, G. William Burg, A. H. MacDonald, and Yimeng Wang, with multiple collaborative publications.

Tutuc's research has appeared in various prominent venues, among which Physical Review Letters, Nano Letters, arXiv (Cornell University), Nature Physics, and Applied Physics Letters are notable for multiple contributions.

In recognition of their contributions to the physics of two-dimensional electron systems, Emanuel Tutuc was awarded the status of Fellow of the American Physical Society in 2016.

Best Publications

  • Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

    Xuesong Li;Weiwei Cai;Jinho An;Seyoung Kim

  • Evidence for moiré excitons in van der Waals heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

    Yufeng Hao;M. S. Bharathi;Lei Wang;Yuanyue Liu

  • Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

    Seyoung Kim;Junghyo Nah;Insun Jo;Davood Shahrjerdi

  • Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers.

    Fengcheng Wu;Fengcheng Wu;Timothy Lovorn;Emanuel Tutuc;Ivar Martin

  • van der Waals Heterostructures with High Accuracy Rotational Alignment.

    Kyounghwan Kim;Matthew Yankowitz;Babak Fallahazad;Sangwoo Kang

  • Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands.

    Fengcheng Wu;Timothy Lovorn;Emanuel Tutuc;A. H. MacDonald

  • Moir'e Excitons in Van der Waals Heterostructures

    Kha Tran;Galan Moody;Fengcheng Wu;Xiaobo Lu

  • Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

    Stefano Larentis;Babak Fallahazad;Emanuel Tutuc

  • The marvels of moiré materials

    Eva Y. Andrei;Dmitri K. Efetov;Pablo Jarillo-Herrero;Allan H. MacDonald

  • Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

    Chihhui Wu;Nihal Arju;Glen Kelp;Jonathan A. Fan

  • Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene

    Kyounghwan Kim;Ashley DaSilva;Shengqiang Huang;Babak Fallahazad

  • Counterflow measurements in strongly correlated GaAs hole bilayers: Evidence for electron-hole pairing

    Emanuel Tutuc;M. Shayegan;D. A. Huse

  • Flat bands in twisted bilayer transition metal dichalcogenides

    Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

  • High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

    Hema C. P. Movva;Amritesh Rai;Sangwoo Kang;Kyounghwan Kim

  • Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

    S.K. Banerjee;L.F. Register;E. Tutuc;D. Reddy

  • Correlated Insulating States in Twisted Double Bilayer Graphene.

    G. William Burg;Jihang Zhu;Takashi Taniguchi;Kenji Watanabe

  • Topologically Protected Helical States in Minimally Twisted Bilayer Graphene.

    Shengqiang Huang;Kyounghwan Kim;Dmitry K. Efimkin;Timothy Lovorn

  • Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    Anupam Roy;Hema C. P. Movva;Biswarup Satpati;Kyounghwan Kim

  • Coulomb drag of massless fermions in graphene

    Seyoung Kim;Insun Jo;Junghyo Nah;Z. Yao

  • Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

    Amritesh Rai;Amithraj Valsaraj;Hema C.P. Movva;Anupam Roy

  • Field effect transistors with current saturation and voltage gain in ultrathin ReS2.

    Chris M. Corbet;Connor McClellan;Amritesh Rai;Sushant Sudam Sonde

  • Photonic-crystal exciton-polaritons in monolayer semiconductors

    Long Zhang;Rahul Gogna;Will Burg;Emanuel Tutuc

  • Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

    Chihhui Wu;Nihal Arju;Jonathan Fan;Igal Brener

Frequent Co-Authors

Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Allan H. MacDonald
Allan H. MacDonald The University of Texas at Austin
Junghyo Nah
Junghyo Nah Chungnam National University
Supratik Guha
Supratik Guha Argonne National Laboratory
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Oki Gunawan
Oki Gunawan IBM (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Daniel Wasserman
Daniel Wasserman The University of Texas at Austin

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